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Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Scientific reports, 2021-06, Vol.11 (1), p.13111-13111, Article 13111

2021

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Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Scientific reports, 2021-08, Vol.11 (1), p.17222-17222, Article 17222

2021

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SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

2010 International Electron Devices Meeting, 2010, p.30.5.1-30.5.4

2010

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IEEE_Xplore

Spectroscopic ellipsometry on silicon-oxide films on silicon

Thin solid films, 1998-12, Vol.335 (1), p.253-257

1998

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Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.236-240

2006

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Impact of carbon concentration on the interface density of states of metal-oxide Si1-x-y GexCy (strained) capacitors

Journal of electronic materials, 2004-09, Vol.33 (9), p.1022-1027

2004

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Key influence of the thermal history on process-induced defects in Czochralski silicon wafers

Semiconductor science and technology, 1997-07, Vol.12 (7), p.933-937

1997

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Ellipsometric Investigations on SiO2/Si: The Interface Response

physica status solidi (b), 1999-09, Vol.215 (1), p.731-736

1999

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Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

Applied surface science, 2004-03, Vol.224 (1), p.297-305

2004

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Selectively grown vertical Si MOS transistor with reduced overlap capacitances

Thin solid films, 1998-12, Vol.336 (1), p.306-308

1998

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Optimization of the channel doping profile of vertical sub-100 nm MOSFETs

Thin solid films, 1998-12, Vol.336 (1), p.309-312

1998

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Comparison of lateral and vertical Si-MOSFETs with ultra short channels

Thin solid films, 1998-12, Vol.336 (1), p.313-318

1998

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Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth

Solid-state electronics, 1999-03, Vol.43 (3), p.529-535

1999

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Selectively grown vertical Si-p MOS transistor with short channel lengths

Electronics letters, 1996-02, Vol.32 (4), p.406

1996

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Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.401-404

2014

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IEEE_Xplore

Novel collector design for high-speed SiGe:C HBTs

Digest. International Electron Devices Meeting, 2002, p.775-778

2002

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IEEE_Xplore

High-field stressing of LPCVD gate oxides

IEEE electron device letters, 1997-03, Vol.18 (3), p.84-86

1997

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IEEE_Xplore

Vertical Si p-MOS transistor selectively grown by low pressure chemical vapour deposition

Thin solid films, 1997-02, Vol.294 (1), p.267-270

1997

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Low temperature-high pressure grown thin gate dielectrics for MOS applications

Microelectronic engineering, 1999, Vol.48 (1), p.223-226

1999

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Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

Thin solid films, 1997, Vol.296 (1), p.37-40

1997

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Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4

2012

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IEEE_Xplore

SiGe HBT with fx/fmax of 505 GHz/720 GHz

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.3.1.1-3.1.4

2016

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IEEE_Xplore

A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module

Digest. International Electron Devices Meeting, 2002, p.783-786

2002

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IEEE_Xplore

SIMS depth profiling of vertical p-channel Si-MOS transistor structures

Fresenius' journal of analytical chemistry, 1997-05, Vol.358 (1-2), p.203-207

1997

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A low-parasitic collector construction for high-speed SiGe:C HBTs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.251-254

2004

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IEEE_Xplore

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Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

Spectroscopic ellipsometry on silicon-oxide films on silicon

Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits

Impact of carbon concentration on the interface density of states of metal-oxide Si1-x-y GexCy (strained) capacitors

Key influence of the thermal history on process-induced defects in Czochralski silicon wafers

Ellipsometric Investigations on SiO2/Si: The Interface Response

Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

Selectively grown vertical Si MOS transistor with reduced overlap capacitances

Optimization of the channel doping profile of vertical sub-100 nm MOSFETs

Comparison of lateral and vertical Si-MOSFETs with ultra short channels

Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth

Selectively grown vertical Si-p MOS transistor with short channel lengths

Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates

Novel collector design for high-speed SiGe:C HBTs

High-field stressing of LPCVD gate oxides

Vertical Si p-MOS transistor selectively grown by low pressure chemical vapour deposition

Low temperature-high pressure grown thin gate dielectrics for MOS applications

Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process

SiGe HBT with fx/fmax of 505 GHz/720 GHz

A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module

SIMS depth profiling of vertical p-channel Si-MOS transistor structures

A low-parasitic collector construction for high-speed SiGe:C HBTs

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