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UV ozone treatment for improving contact resistance on graphene

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

Nanotechnology, 2016-10, Vol.27 (42), p.425401-425401

2016

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Electroluminescence from ZnO nanowire/polymer composite p - n junction

Applied physics letters, 2006-04, Vol.88 (17), p.173503-173503-3

2006

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Efficiency Enhancement of Organic/GaAs Hybrid Photovoltaic Cells Using Transparent Graphene as Front Electrode

IEEE journal of photovoltaics, 2016-03, Vol.6 (2), p.480-485

2016

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Local anodic oxidation kinetics of chemical vapor deposition graphene supported on a thin oxide buffered silicon template

Carbon (New York), 2013-04, Vol.54, p.336-342

2013

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Electrical transport properties of single GaN and InN nanowires

Journal of electronic materials, 2006-04, Vol.35 (4), p.738-743

2006

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Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

IEEE photonics technology letters, 2006-01, Vol.18 (1), p.274-276

2006

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Chemical vapor deposition growth of bilayer graphene via altering gas flux geometry

Thin solid films, 2019-11, Vol.690, p.137521, Article 137521

2019

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Fabrication of Flexible White Light-Emitting Diodes from Photoluminescent Polymer Materials with Excellent Color Quality

ACS applied materials & interfaces, 2017-10, Vol.9 (40), p.35279-35286

2017

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Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates

IEEE photonics technology letters, 2012-07, Vol.24 (14), p.1212-1214

2012

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Back-contacted thin-film GaAs solar cells

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.3629-3631

2016

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Efficient hybrid white light-emitting diodes by organic-inorganic materials at different CCT from 3000K to 9000K

Optics express, 2015-04, Vol.23 (7), p.A204-A210

2015

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Improvement of emission uniformity by using micro-cone patterned PDMS film

Optics express, 2014-02, Vol.22 (4), p.4516-4522

2014

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Doping of monolayer graphene for silicon based Schottky junction solar cells

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2436-2438

2013

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Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

Materials chemistry and physics, 2015-05, Vol.157, p.63-68

2015

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Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

Journal of crystal growth, 2006-10, Vol.295 (2), p.103-107

2006

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Approaching conversion limit with all-dielectric solar cell reflectors

Optics express, 2015-02, Vol.23 (3), p.A106-A117

2015

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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

Nanoscale research letters, 2014-09, Vol.9 (1), p.505-505, Article 505

2014

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Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks

Applied physics letters, 2012-12, Vol.101 (23)

2012

Volltextzugriff (PDF)

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

IEEE journal of quantum electronics, 2014-05, Vol.50 (5), p.354-363

2014

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Abnormal blue shift of InGaN micro-size light emitting diodes

Solid-state electronics, 2006-09, Vol.50 (9-10), p.1588-1594

2006

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Effects of semiconductor processing chemicals on conductivity of graphene

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-07, Vol.30 (4)

2012

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Transport properties of InN nanowires

Applied physics letters, 2005-08, Vol.87 (9), p.093112-093112-3

2005

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Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n -GaN layers

Applied physics letters, 2003-10, Vol.83 (17), p.3608-3610

2003

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Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

Applied physics letters, 2000-12, Vol.77 (23), p.3758-3760

2000

Volltextzugriff (PDF)

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UV ozone treatment for improving contact resistance on graphene

Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

Electroluminescence from ZnO nanowire/polymer composite p - n junction

Efficiency Enhancement of Organic/GaAs Hybrid Photovoltaic Cells Using Transparent Graphene as Front Electrode

Local anodic oxidation kinetics of chemical vapor deposition graphene supported on a thin oxide buffered silicon template

Electrical transport properties of single GaN and InN nanowires

Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

Chemical vapor deposition growth of bilayer graphene via altering gas flux geometry

Fabrication of Flexible White Light-Emitting Diodes from Photoluminescent Polymer Materials with Excellent Color Quality

Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates

Back-contacted thin-film GaAs solar cells

Efficient hybrid white light-emitting diodes by organic-inorganic materials at different CCT from 3000K to 9000K

Improvement of emission uniformity by using micro-cone patterned PDMS film

Doping of monolayer graphene for silicon based Schottky junction solar cells

Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

Approaching conversion limit with all-dielectric solar cell reflectors

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Abnormal blue shift of InGaN micro-size light emitting diodes

Effects of semiconductor processing chemicals on conductivity of graphene

Transport properties of InN nanowires

Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n -GaN layers

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

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