UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 90

Sortiert nach

Differential Impact of Social Isolation and Space Radiation on Behavior and Motor Learning in Rats

Life (Basel, Switzerland), 2023-03, Vol.13 (3), p.826

2023

Volltextzugriff (PDF)

Alterations in Blood-Brain Barrier Integrity and Lateral Ventricle Differ in Rats Exposed to Space Radiation and Social Isolation

Life (Basel, Switzerland), 2024-05, Vol.14 (5), p.636

2024

Volltextzugriff (PDF)

Sleep and Core Body Temperature Alterations Induced by Space Radiation in Rats

Life (Basel, Switzerland), 2023-04, Vol.13 (4), p.1002

2023

Volltextzugriff (PDF)

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

Applied physics letters, 2003-04, Vol.82 (15), p.2530-2532

2003

Volltextzugriff (PDF)

V/Al/Pt/Au Ohmic contact to n -AlGaN/GaN heterostructures

Applied physics letters, 2002-03, Vol.80 (11), p.1954-1956

2002

Volltextzugriff (PDF)

Effects of social isolation and galactic cosmic radiation on fine motor skills and behavioral performance

Life sciences in space research, 2024-05, Vol.41, p.74-79

2024

Volltextzugriff (PDF)

Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

Journal of electronic materials, 2004-05, Vol.33 (5), p.408-411

2004

Volltextzugriff (PDF)

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

Applied physics letters, 2003-06, Vol.82 (22), p.3910-3912

2003

Volltextzugriff (PDF)

Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-05, Vol.26 (3), p.399-405

2008

Volltextzugriff (PDF)

Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode

IEEE electron device letters, 2004-05, Vol.25 (5), p.256-258

2004

Volltextzugriff (PDF)

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

Journal of crystal growth, 2004-05, Vol.266 (1), p.354-362

2004

Volltextzugriff (PDF)

Growth of high quality InN on production style PA-MBE system

Physica status solidi. C, 2008-05, Vol.5 (6), p.1642-1644

2008

Volltextzugriff (PDF)

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Journal of crystal growth, 2004-01, Vol.261 (2), p.190-196

2004

Volltextzugriff (PDF)

Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study

Applied physics letters, 1999-09, Vol.75 (12), p.1703-1705

1999

Volltextzugriff (PDF)

Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates

Journal of applied physics, 2003-05, Vol.93 (9), p.5824-5826

2003

Volltextzugriff (PDF)

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

Solid-state electronics, 2003-10, Vol.47 (10), p.1781-1786

2003

Volltextzugriff (PDF)

Measurement Of Electric Fields In GaN/AlGaN FETs Using Photoreflectance With Different Excitation Energies

Physics of Semiconductors; Part A, 2005, Vol.772, p.419-420

2005

Volltextzugriff (PDF)

GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm

Applied physics letters, 2000-09, Vol.77 (10), p.1543-1544

2000

Volltextzugriff (PDF)

High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors

Electronics letters, 2003-05, Vol.39 (10), p.809

2003

Volltextzugriff (PDF)

Determination of 2D Pair Correlations and Pair Interaction Energies of In Atoms in Molecular Beam Epitaxially Grown InGaAs Alloys

Physical review letters, 1997-12, Vol.79 (24), p.4822-4825

1997

Volltextzugriff (PDF)

GaNAs avalanche photodiode operating at 0.94 μm

Applied physics letters, 2000-05, Vol.76 (20), p.2824-2825

2000

Volltextzugriff (PDF)

Characterization of high quality InN grown on production-styleplasma assisted molecular beam epitaxy system

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2008-04, Vol.26 (3), p.399-405

2008

Volltextzugriff (PDF)

Growth of GaInNAs by Plasma Assisted Molecular Beam Epitaxy

MRS proceedings, 2000, Vol.618, Article 315

2000

Volltextzugriff (PDF)

Microwave noise performances of AlGaN∕GaN HEMTs on semi-insulating 6H-SiC substrates

Electronics letters, 2004-01, Vol.40 (1), p.80

2004

Volltextzugriff (PDF)

Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates

Electronics letters, 2004-01, Vol.40 (1), p.1-1

2004

Volltextzugriff (PDF)

1 – 25 von 90

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(73)
Mit Volltextzugriff
(74)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(45)
Physical Sciences
(22)
Physics
(19)
Life Sciences & Biomedicine
(18)
Technology
(16)
Physics, Applied
(15)
Humans
(13)
Biological And Medical Sciences
(11)
Materials Science
(10)
Animals
(9)
Female
(8)
Male
(8)
Medical Sciences
(8)
Engineering
(7)
Engineering, Electrical & Electronic
(6)
Genetics & Heredity
(6)
Materials Science, Coatings & Films
(5)
Materials Science, Multidisciplinary
(5)
Molecular Sequence Data
(5)
Religion
(5)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Differential Impact of Social Isolation and Space Radiation on Behavior and Motor Learning in Rats

Alterations in Blood-Brain Barrier Integrity and Lateral Ventricle Differ in Rats Exposed to Space Radiation and Social Isolation

Sleep and Core Body Temperature Alterations Induced by Space Radiation in Rats

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

V/Al/Pt/Au Ohmic contact to n -AlGaN/GaN heterostructures

Effects of social isolation and galactic cosmic radiation on fine motor skills and behavioral performance

Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

Growth of high quality InN on production style PA-MBE system

Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study

Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

Measurement Of Electric Fields In GaN/AlGaN FETs Using Photoreflectance With Different Excitation Energies

GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm

High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors

Determination of 2D Pair Correlations and Pair Interaction Energies of In Atoms in Molecular Beam Epitaxially Grown InGaAs Alloys

GaNAs avalanche photodiode operating at 0.94 μm

Characterization of high quality InN grown on production-styleplasma assisted molecular beam epitaxy system

Growth of GaInNAs by Plasma Assisted Molecular Beam Epitaxy

Microwave noise performances of AlGaN∕GaN HEMTs on semi-insulating 6H-SiC substrates

Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates

Suchergebnisse filtern