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4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing

Electronic Materials Letters, 2024, 20(3), , pp.345-351

2024

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Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si

Nature (London), 2002-04, Vol.416 (6883), p.826-829

2002

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing

Applied surface science, 2024-10, Vol.670, p.160654, Article 160654

2024

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Implantation and transient B diffusion in Si: The source of the interstitials

Applied physics letters, 1994-10, Vol.65 (18), p.2305-2307

1994

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Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

Physical review letters, 2005-04, Vol.94 (16), p.165501.1-165501.4, Article 165501

2005

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Applied physics letters, 1999-06, Vol.74 (24), p.3657-3659

1999

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Carbon in silicon: Modeling of diffusion and clustering mechanisms

Journal of applied physics, 2002-08, Vol.92 (3), p.1582-1587

2002

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Applied physics letters, 1997-04, Vol.70 (17), p.2285-2287

1997

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Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Applied physics letters, 1995-03, Vol.66 (11), p.1370-1372

1995

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Applied physics letters, 1998-11, Vol.73 (20), p.2980-2982

1998

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Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Applied physics letters, 1999-04, Vol.74 (17), p.2435-2437

1999

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Carbon diffusion in silicon

Applied physics letters, 1998-10, Vol.73 (17), p.2465-2467

1998

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Simulation of cluster evaporation and transient enhanced diffusion in silicon

Applied physics letters, 1996-04, Vol.68 (17), p.2395-2397

1996

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Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

Applied physics letters, 1997-11, Vol.71 (21), p.3141-3143

1997

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

IEEE electron device letters, 2003-04, Vol.24 (4), p.209-211

2003

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Activation and deactivation of implanted B in Si

Applied physics letters, 1999-08, Vol.75 (5), p.662-664

1999

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Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100)

Physical review letters, 1990-09, Vol.65 (10), p.1227-1230

1990

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Applied physics letters, 1999-03, Vol.74 (9), p.1299-1301

1999

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Applied physics letters, 1995-01, Vol.66 (5), p.568-570

1995

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Fermi-Level-Pinning Defects in Highly n -Doped Silicon

Physical review letters, 1997-12, Vol.79 (24), p.4834-4837

1997

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Defect identification using the core-electron contribution in Doppler-broadening spectroscopy of positron-annihilation radiation

Physical review. B, Condensed matter, 1996-08, Vol.54 (7), p.4722-4731

1996

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Doping of Si thin films by low-temperature molecular beam epitaxy

Journal of applied physics, 1993-06, Vol.73 (12), p.8237-8241

1993

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Boron-enhanced diffusion of boron: Physical mechanisms

Applied physics letters, 1999-04, Vol.74 (16), p.2331-2333

1999

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4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing

Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing

Implantation and transient B diffusion in Si: The source of the interstitials

Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Carbon in silicon: Modeling of diffusion and clustering mechanisms

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Carbon diffusion in silicon

Simulation of cluster evaporation and transient enhanced diffusion in silicon

Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

Activation and deactivation of implanted B in Si

Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100)

The interstitial fraction of diffusivity of common dopants in Si

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Fermi-Level-Pinning Defects in Highly n -Doped Silicon

Defect identification using the core-electron contribution in Doppler-broadening spectroscopy of positron-annihilation radiation

Doping of Si thin films by low-temperature molecular beam epitaxy

Boron-enhanced diffusion of boron: Physical mechanisms

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