UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-11, Vol.20 (6), p.1867-1876

2002

Volltextzugriff (PDF)

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.17-23

2002

Volltextzugriff (PDF)

Advanced Cu interconnects using air gaps

Microelectronic engineering, 2005-12, Vol.82 (3), p.321-332

2005

Volltextzugriff (PDF)

Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects

Microelectronic engineering, 2005-12, Vol.82 (3), p.587-593

2005

Volltextzugriff (PDF)

Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.1-7

2004

Volltextzugriff (PDF)

Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.106-112

2004

Volltextzugriff (PDF)

Integration of SiOC air gaps in copper interconnects

Microelectronic engineering, 2003-11, Vol.70 (2), p.274-279

2003

Volltextzugriff (PDF)

Integration of gas cluster process for copper interconnects reliability improvement and process impact evaluation on BEOL dielectric materials

Microelectronic engineering, 2007-09, Vol.84 (9), p.2184-2187

2007

Volltextzugriff (PDF)

Incorporation of oxygen and nitrogen in ultrathin films of SiO2 annealed in NO

Applied physics letters, 1998-06, Vol.72 (23), p.2999-3001

1998

Volltextzugriff (PDF)

New techniques to characterize properties of advanced dielectric barriers for sub-65 nm technology node

Microelectronic engineering, 2006, p.83 Issue: 11-12 (2006) 2130-2135

2006

Volltextzugriff (PDF)

Loss of Oxygen at the Si ‐ SiO2 Interface during Dry Oxidation of Silicon

Journal of the Electrochemical Society, 1999-09, Vol.146 (9), p.3389-3392

1999

Volltextzugriff (PDF)

Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations

Journal of applied physics, 1999-04, Vol.85 (7), p.3661-3665

1999

Volltextzugriff (PDF)

Interface modification of ultrathin SiO2/Si(001) by nitric oxide treatments: a comparative electron paramagnetic resonance and nuclear reaction analysis study

Journal of non-crystalline solids, 2001-02, Vol.280 (1-3), p.143-149

2001

Volltextzugriff (PDF)

Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2

Journal of non-crystalline solids, 1999-04, Vol.245 (1-3), p.169-174

1999

Volltextzugriff (PDF)

Narrow nuclear resonance position or cross section shape measurements with a high precision computer controlled beam energy scanning system

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-03, Vol.136, p.545-550

1998

Volltextzugriff (PDF)

High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-03, Vol.136, p.521-527

1998

Volltextzugriff (PDF)

General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695), 2003, p.65-67

2003

Volltextzugriff (PDF)

Integration and performances of an alternative approach using copper silicide as a self-aligned barrier for 45 nm technology node Cu interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004, p.15-17

2004

Volltextzugriff (PDF)

Optimization of signal propagation performances in interconnects of the 45 nm node by exhaustive analysis of the technological parameters impact

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005, 2005, p.74-76

2005

Volltextzugriff (PDF)

Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005, 2005, p.85-87

2005

Volltextzugriff (PDF)

Copper metallization for advanced interconnects: the electrochemical revolution

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004, p.3-5

2004

Volltextzugriff (PDF)

Process optimisation and dual damascene integration of porous CVD SiOC dielectric at 2.4 and 2.2 k-values for 45 nm CMOS technology

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004, p.202-240

2004

Volltextzugriff (PDF)

Gamma radiation produced performance decrement in rat as assessed with the accelerod

Neuroscience letters, 1984-08, Vol.49 (3), p.297-300

1984

Volltextzugriff (PDF)

1 – 23 von 23

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(17)
Mit Volltextzugriff
(22)

Publikationsform

Artikel
(17)
Tagungsberichte
(6)

Sprache

Englisch
(23)
Japanisch
(4)

Erscheinungsjahr

n.n

Kollektion

Ingenta
(13)
ScienceDirect
(13)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(10)
IEEE Xplore
(6)
American Institute of Physics (AIP) Journals
(3)
IngentaConnect Journals
(2)
Publisher or Other Site
(2)
MEDLINE
(1)

3 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Advanced Cu interconnects using air gaps

Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects

Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below

Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects

Integration of SiOC air gaps in copper interconnects

Integration of gas cluster process for copper interconnects reliability improvement and process impact evaluation on BEOL dielectric materials

Incorporation of oxygen and nitrogen in ultrathin films of SiO2 annealed in NO

New techniques to characterize properties of advanced dielectric barriers for sub-65 nm technology node

Loss of Oxygen at the Si ‐ SiO2 Interface during Dry Oxidation of Silicon

Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations

Interface modification of ultrathin SiO2/Si(001) by nitric oxide treatments: a comparative electron paramagnetic resonance and nuclear reaction analysis study

Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2

Narrow nuclear resonance position or cross section shape measurements with a high precision computer controlled beam energy scanning system

High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances

General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material

Integration and performances of an alternative approach using copper silicide as a self-aligned barrier for 45 nm technology node Cu interconnects

Optimization of signal propagation performances in interconnects of the 45 nm node by exhaustive analysis of the technological parameters impact

Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics

Copper metallization for advanced interconnects: the electrochemical revolution

Process optimisation and dual damascene integration of porous CVD SiOC dielectric at 2.4 and 2.2 k-values for 45 nm CMOS technology

Gamma radiation produced performance decrement in rat as assessed with the accelerod

Suchergebnisse filtern