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Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (16), p.2064-2067

2019

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New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.628-631

2018

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Atomic Force Microscopy Local Oxidation of GeO Thin Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2081-2084

2018

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Local Anodic Oxidation of Thin GeO Films and Formation of Nanostructures Based on Them

Physics of the solid state, 2018-04, Vol.60 (4), p.700-704

2018

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A novel tip-induced local electrical decomposition method for thin GeO films nanostructuring

Nanotechnology, 2008-06, Vol.19 (24), p.245302-245302 (4)

2008

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Materials science aspects of dielectric film compositions in the planar technology of Ge-based MIS structures

Optoelectronics, instrumentation, and data processing, 2016-09, Vol.52 (5), p.428-433

2016

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Local anodic oxidation of solid GeO films: The nanopatterning possibilities

Surfaces and interfaces, 2017-03, Vol.6, p.56-59

2017

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Correlation between stress and structure in chemically vapour deposited silicon nitride films

Thin solid films, 1988-08, Vol.162, p.129-143

1988

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Photoluminescence of GeO2 films containing germanium nanocrystals

JETP letters, 2003-01, Vol.77 (8), p.411-414

2003

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Luminescence in GeOx films containing germanium nanoclusters

Nanotechnologies in Russia, 2016-05, Vol.11 (5-6), p.325-330

2016

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Luminescence in GeO x films containing germanium nanoclusters

Nanotechnologies in Russia, 2016-05, Vol.11 (5-6), p.325-330

2016

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Modification of photoelectrical and optical properties of GaAs/AlGaAs quantum-well IR-photodetectors by radiation

Infrared physics & technology, 1995-08, Vol.36 (5), p.837-841

1995

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A Novel Nanolithographic Concept Using Crack‐Assisted Patterning and Self‐Alignment Technology

Journal of the Electrochemical Society, 1998-06, Vol.145 (6), p.2120-2131

1998

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APPLYING AN IMPROVED PHONON CONFINEMENT MODEL TO THE ANALYSIS OF RAMAN SPECTRA OF GERMANIUM NANOCRYSTALS

Z̆urnal ėksperimentalʹnoj i teoretic̆eskoj fiziki, 2014, Vol.145 (1), p.77-83

2014

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Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO[sub 2] Films

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (10), p.1168

Gorokhov, E. B.

2005

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Quasi-direct optical transitions in Ge nanocrystals embedded in GeO2 matrix

JETP letters, 2009-03, Vol.89 (2), p.76-79

2009

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Ellipsometry of GeO2 films with Ge nanoclusters: Influence of the quantum-size effect on refractive index

Optics and spectroscopy, 2009-03, Vol.106 (3), p.436-440

2009

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Structure of SiO2 Pyrolitic Films on Ge Substrates

October 16, 2021, Vol.43, Number 2, p.659-666

2021

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Modification of germanium nanoclusters in GeOx films during isochronous furnace and pulse laser annealing

Technical physics letters, 2010, Vol.36 (5), p.439-442

2010

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Modification of germanium nanoclusters in GeO x films during isochronous furnace and pulse laser annealing

Technical physics letters, 2010-05, Vol.36 (5), p.439-442

2010

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Scanning-probe-induced local decomposition of solid germanium monoxide films: The nano-pattering of germanium

Surface investigation, x-ray, synchrotron and neutron techniques, 2009-10, Vol.3 (5), p.773-780

2009

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Mechanical and electrical properties of the double-layer film system GeO2-Si3N4 on Ge

Physica status solidi. A, Applied research, 1987-06, Vol.101 (2), p.451-462

1987

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Radiofrequency Electromagnetic Field Levels at Workplaces of Technical Specialists of Cellular Communication

ЗДОРОВЬЕ НАСЕЛЕНИЯ И СРЕДА ОБИТАНИЯ - ЗНиСО / PUBLIC HEALTH AND LIFE ENVIRONMENT, 2021-06, p.9-14

2021

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The effect of a nonmonotonic potential profile on edge magnetic states

Semiconductors (Woodbury, N.Y.), 1998-09, Vol.32 (9), p.970-974

1998

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Effect of Structure of Hydrogenated SiNx:H Films on the Dissociation Mechanism of Si-H and N-H Bonds

Materials science forum, 1995, Vol.185-188, p.119-128

1995

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Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

Atomic Force Microscopy Local Oxidation of GeO Thin Films

Local Anodic Oxidation of Thin GeO Films and Formation of Nanostructures Based on Them

A novel tip-induced local electrical decomposition method for thin GeO films nanostructuring

Materials science aspects of dielectric film compositions in the planar technology of Ge-based MIS structures

Local anodic oxidation of solid GeO films: The nanopatterning possibilities

Correlation between stress and structure in chemically vapour deposited silicon nitride films

Photoluminescence of GeO2 films containing germanium nanocrystals

Luminescence in GeOx films containing germanium nanoclusters

Luminescence in GeO x films containing germanium nanoclusters

Modification of photoelectrical and optical properties of GaAs/AlGaAs quantum-well IR-photodetectors by radiation

A Novel Nanolithographic Concept Using Crack‐Assisted Patterning and Self‐Alignment Technology

APPLYING AN IMPROVED PHONON CONFINEMENT MODEL TO THE ANALYSIS OF RAMAN SPECTRA OF GERMANIUM NANOCRYSTALS

Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO[sub 2] Films

Quasi-direct optical transitions in Ge nanocrystals embedded in GeO2 matrix

Ellipsometry of GeO2 films with Ge nanoclusters: Influence of the quantum-size effect on refractive index

Structure of SiO2 Pyrolitic Films on Ge Substrates

Modification of germanium nanoclusters in GeOx films during isochronous furnace and pulse laser annealing

Modification of germanium nanoclusters in GeO x films during isochronous furnace and pulse laser annealing

Scanning-probe-induced local decomposition of solid germanium monoxide films: The nano-pattering of germanium

Mechanical and electrical properties of the double-layer film system GeO2-Si3N4 on Ge

Radiofrequency Electromagnetic Field Levels at Workplaces of Technical Specialists of Cellular Communication

The effect of a nonmonotonic potential profile on edge magnetic states

Effect of Structure of Hydrogenated SiNx:H Films on the Dissociation Mechanism of Si-H and N-H Bonds

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