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Analysis and Comparison of Different Approaches to the Extraction of Parameters of the Memristor Model

Russian microelectronics, 2022-12, Vol.51 (8), p.649-653

2022

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Identification of knowledge sources for micro- and nanoelectronics technologies

Rossijskij tehnologičeskij žurnal, 2022-04, Vol.10 (2), p.87-95

2022

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A discussion of S.M. Krylov’s book «Neocybernetics» (2008)

Rossijskij tehnologičeskij žurnal, 2021-12, Vol.9 (6), p.73-87

2021

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Computer Modeling of Plasma-Enhanced Atomic Layer Deposition of HfO2 and ZrO2

Russian microelectronics, 2023-12, Vol.52 (Suppl 1), p.S184-S193

2023

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Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language

Russian microelectronics, 2019-05, Vol.48 (3), p.131-142

2019

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Grounds and problem statement for software complex for photolithography optimization for minimization of losses in optical structures of photonic integrated circuits

IOP conference series. Materials Science and Engineering, 2020-09, Vol.939 (1), p.12070

2020

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Study of the Plasma Resistance of a High Resolution e-Beam Resist HSQ for Prototyping Nanoelectronic Devices

Russian microelectronics, 2021, Vol.50 (5), p.297-302

2021

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Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma

Russian microelectronics, 2018-11, Vol.47 (6), p.415-426

2018

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Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (13), p.1726-1728

2016

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Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

Russian microelectronics, 2018-09, Vol.47 (5), p.323-331

2018

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Integration of functional elements of resistive nonvolative memory with 1T-1R topology

Russian microelectronics, 2016-11, Vol.45 (6), p.383-395

2016

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PROBLEMS AND WAYS TO ACHIEVE TECHNOLOGICAL INDEPENDENCE IN THE FIELD OF MATERIALS FOR MICROELECTRONICS

Vestnik Rossijskoj akademii nauk, 2023-10, Vol.93 (10), p.917-922

2023

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Area selective grafting of siloxane molecules on low-k dielectric with respect to copper surface

Applied surface science, 2019-05, Vol.476, p.317-324

2019

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Scanning Force Microscope Measurement of the Parameters of the Profiles of Submillimeter VLSI Components

Measurement techniques, 2001-01, Vol.44 (1), p.44-48

2001

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Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition

Russian microelectronics, 2016-07, Vol.45 (4), p.262-269

2016

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Analysis and comparison of different approaches to the extraction of parameters of the memristor model

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2022-01, Vol.24 (4), p.248-254

2022

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Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures

Russian microelectronics, 2014-09, Vol.43 (5), p.328-332

2014

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Resistive switching in TiN/HfxAl1 − xOy/HfO2/TiN and TiN/HfO2/Ti/TiN structures

Russian microelectronics, 2014, Vol.43 (5), p.328-332

2014

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Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films

Russian microelectronics, 2014-07, Vol.43 (4), p.239-245

2014

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Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary HfxAl1 − xOy oxide films

Russian microelectronics, 2014, Vol.43 (4), p.239-245

2014

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Determination of the initial guess for the problem of memristor model parameters extraction using machine learning algorithms

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2021-08, Vol.24 (2), p.97-101

2021

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Diffraction ellipsometric measurement of step height on wafer surfaces

Russian microelectronics, 2005-03, Vol.34 (2), p.95-102

2005

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Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

Acta physica Polonica, A, 1996-10, Vol.90 (4), p.727-730

1996

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SEM Linear Measurement in a Wide Magnification Range

Russian microelectronics, 2004-11, Vol.33 (6), p.342-349

2004

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Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach

Journal of physics. D, Applied physics, 2018-07, Vol.51 (32), p.325202

2018

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Analysis and Comparison of Different Approaches to the Extraction of Parameters of the Memristor Model

Identification of knowledge sources for micro- and nanoelectronics technologies

A discussion of S.M. Krylov’s book «Neocybernetics» (2008)

Computer Modeling of Plasma-Enhanced Atomic Layer Deposition of HfO2 and ZrO2

Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language

Grounds and problem statement for software complex for photolithography optimization for minimization of losses in optical structures of photonic integrated circuits

Study of the Plasma Resistance of a High Resolution e-Beam Resist HSQ for Prototyping Nanoelectronic Devices

Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma

Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures

Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

Integration of functional elements of resistive nonvolative memory with 1T-1R topology

PROBLEMS AND WAYS TO ACHIEVE TECHNOLOGICAL INDEPENDENCE IN THE FIELD OF MATERIALS FOR MICROELECTRONICS

Area selective grafting of siloxane molecules on low-k dielectric with respect to copper surface

Scanning Force Microscope Measurement of the Parameters of the Profiles of Submillimeter VLSI Components

Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition

Analysis and comparison of different approaches to the extraction of parameters of the memristor model

Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures

Resistive switching in TiN/HfxAl1 − xOy/HfO2/TiN and TiN/HfO2/Ti/TiN structures

Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films

Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary HfxAl1 − xOy oxide films

Determination of the initial guess for the problem of memristor model parameters extraction using machine learning algorithms

Diffraction ellipsometric measurement of step height on wafer surfaces

Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

SEM Linear Measurement in a Wide Magnification Range

Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach

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