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Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors

Journal of alloys and compounds, 2007-07, Vol.438 (1), p.8-14

2007

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Structural and magnetic properties of iron-rich compounds in the Yb–Fe–Ga system

Journal of alloys and compounds, 2006-05, Vol.415 (1), p.8-11

2006

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Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity

Semiconductors (Woodbury, N.Y.), 2007-09, Vol.41 (9), p.1041-1047

2007

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Structural, electrical, and magnetic properties of R-Fe-Ge (R = Y, La, Sc) films

Inorganic materials, 2009-04, Vol.45 (4), p.386-390

2009

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In situ synthesis, morphology and magnetic properties of poly(ether–ester) multiblock copolymer/carbon-covered nickel nanosystems

Journal of non-crystalline solids, 2010-08, Vol.356 (37), p.1893-1901

2010

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Metal-insulator transition induced by changes in composition in the Zr1-xScxNiSn solid solution range

Journal of alloys and compounds, 2005-09, Vol.400 (1-2), p.29-32

2005

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Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity

Semiconductors (Woodbury, N.Y.), 2009, Vol.43 (1), p.7-13

2009

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Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity

Semiconductors (Woodbury, N.Y.), 2009-03, Vol.43 (3), p.278-284

2009

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Mechanism of local amorphization of a heavily doped Ti1 − x V x CoSb intermetallic semiconductor

Semiconductors (Woodbury, N.Y.), 2008-07, Vol.42 (7), p.753-760

2008

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Structural and thermoelectric properties of Zr1 − xErxNiSn solid solutions

Inorganic materials, 2011-06, Vol.47 (6), p.637-644

2011

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Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors

Semiconductors (Woodbury, N.Y.), 2006-06, Vol.40 (6), p.655-661

2006

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Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type

Semiconductors (Woodbury, N.Y.), 2006-02, Vol.40 (2), p.131-136

2006

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Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type

Semiconductors (Woodbury, N.Y.), 2006-11, Vol.40 (11), p.1275-1281

2006

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Magnetic and electrical properties of R2CuGe6 compounds (R=Y, Ce, Nd, Gd, Tb, Dy, Ho, Er, Yb)

Journal of alloys and compounds, 2000-10, Vol.311 (2), p.120-123

2000

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The influence of heavy doping by Cu donor impurities of the p -TiCoSb intermetallic semiconductor on the electronic structure and electrophysical properties

Journal of physical studies, 2008, Vol.12 (3), Article 3703

2008

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Anomalous magnetism and electron paramagnetic resonance spectroscopy of the ZrNi1-xCrxSn solid solution

Journal of alloys and compounds, 2000-01, Vol.296 (1-2), p.253-257

2000

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X-Ray Spectra and Electronic Structure of the Compounds in the ZrCoSi System

Physica status solidi. B. Basic research, 1996-12, Vol.198 (2), p.761-767

1996

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From nonmagnetic semiconductor to itinerant ferromagnet in the TiNiSn-TiCoSn series

Journal of magnetism and magnetic materials, 1994-05, Vol.134 (1), p.95-105

1994

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Magnetic properties, electronic structure and X-ray spectra of RCo9Si4 compounds (R=Y, Gd, Tb)

Journal of alloys and compounds, 2000-01, Vol.296 (1-2), p.272-275

2000

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Thermoelectric power factor of Ti1 − x V x NiSn alloys

Inorganic materials, 2010-08, Vol.46 (8), p.842-846

2010

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Structural and thermoelectric properties of Zr1 − x Er x NiSn solid solutions

Inorganic materials, 2011-06, Vol.47 (6), p.637-644

2011

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Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors

Journal of alloys and compounds, 2007, Vol.438 (1-2), p.8-14

2007

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Mechanism of local amorphization of a heavily doped Ti{sub 1-} {sub x}V{sub x}CoSb intermetallic semiconductor

Semiconductors (Woodbury, N.Y.), 2008-07, Vol.42 (7)

2008

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V–Mn–{Sn,Sb} ternary systems

Journal of alloys and compounds, 2001-04, Vol.317, p.280-283

2001

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Synthesis, crystal structure and physical properties of ZrNiSn semiconductor doped with Mn

Journal of alloys and compounds, 2001-04, Vol.317, p.357-362

2001

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Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors

Structural and magnetic properties of iron-rich compounds in the Yb–Fe–Ga system

Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity

Structural, electrical, and magnetic properties of R-Fe-Ge (R = Y, La, Sc) films

In situ synthesis, morphology and magnetic properties of poly(ether–ester) multiblock copolymer/carbon-covered nickel nanosystems

Metal-insulator transition induced by changes in composition in the Zr1-xScxNiSn solid solution range

Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity

Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity

Mechanism of local amorphization of a heavily doped Ti1 − x V x CoSb intermetallic semiconductor

Structural and thermoelectric properties of Zr1 − xErxNiSn solid solutions

Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type

Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type

Magnetic and electrical properties of R2CuGe6 compounds (R=Y, Ce, Nd, Gd, Tb, Dy, Ho, Er, Yb)

The influence of heavy doping by Cu donor impurities of the p -TiCoSb intermetallic semiconductor on the electronic structure and electrophysical properties

Anomalous magnetism and electron paramagnetic resonance spectroscopy of the ZrNi1-xCrxSn solid solution

X-Ray Spectra and Electronic Structure of the Compounds in the ZrCoSi System

From nonmagnetic semiconductor to itinerant ferromagnet in the TiNiSn-TiCoSn series

Magnetic properties, electronic structure and X-ray spectra of RCo9Si4 compounds (R=Y, Gd, Tb)

Thermoelectric power factor of Ti1 − x V x NiSn alloys

Structural and thermoelectric properties of Zr1 − x Er x NiSn solid solutions

Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors

Mechanism of local amorphization of a heavily doped Ti{sub 1-} {sub x}V{sub x}CoSb intermetallic semiconductor

V–Mn–{Sn,Sb} ternary systems

Synthesis, crystal structure and physical properties of ZrNiSn semiconductor doped with Mn

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