UB Paderborn / Katalog / Suche / in CDI

Non-amphoteric N-type doping with Sn of GaAs(631) layers grown by molecular beam epitaxy

Journal of applied physics, 2024-05, Vol.135 (17)

2024

Volltextzugriff (PDF)

Estimation of the instable composition areas and its dependence on the thickness of GalnAsSb layers grown on different substrates

Journal of physics. Conference series, 2017-01, Vol.792 (1), p.12011

2017

Volltextzugriff (PDF)

Strain and anisotropy effects studied in InAs/GaAs(221) quantum dashes by Raman spectroscopy

Journal of crystal growth, 2017-11, Vol.477, p.212-216

2017

Volltextzugriff (PDF)

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Applied surface science, 2015-04, Vol.333, p.92-95

2015

Volltextzugriff (PDF)

Si-doped AlGaAs/GaAs(631)A heterostructures grown by MBE as a function of the As-pressure

Journal of crystal growth, 2015-09, Vol.425, p.85-88

2015

Volltextzugriff (PDF)

Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE

Journal of crystal growth, 2013-09, Vol.378, p.295-298

2013

Volltextzugriff (PDF)

Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

Journal of physics. Conference series, 2011-01, Vol.274 (1), p.012115-4

2011

Volltextzugriff (PDF)

High Prevalence of Anal Human Papillomavirus–Associated Cancer Precursors in a Contemporary Cohort of Asymptomatic HIV-Infected Women

Clinical infectious diseases, 2015-05, Vol.60 (10), p.1559-1568

2015

Volltextzugriff (PDF)

Prevalence of and Risk Factors for Anal Oncogenic Human Papillomavirus Infection Among HIV-Infected Women in France in the Combination Antiretroviral Therapy Era

The Journal of infectious diseases, 2016-05, Vol.213 (9), p.1455-1461

2016

Volltextzugriff (PDF)

Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell

Journal of crystal growth, 2009-03, Vol.311 (7), p.1650-1654

2009

Volltextzugriff (PDF)

Investigation of the “composition-pulling or lattice-latching” effect in LPE

Journal of crystal growth, 2005-04, Vol.277 (1), p.138-142

2005

Volltextzugriff (PDF)

P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE

Journal of crystal growth, 2007-04, Vol.301, p.84-87

2007

Volltextzugriff (PDF)

Investigation of the phase diagram of the Pb–Ga–Sb system

Thin solid films, 2004-08, Vol.461 (2), p.233-236

2004

Volltextzugriff (PDF)

GaSb grown from Sn solvent at low temperatures by LPE

Journal of physics. Conference series, 2009-05, Vol.167 (1), p.012024

2009

Volltextzugriff (PDF)

GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

Journal of physics. Conference series, 2009-05, Vol.167 (1), p.012002

2009

Volltextzugriff (PDF)

First results of ecological rehabilitation of a temporary storage site for spent nuclear fuel and radioactive wastes in Guba Chervyanaya

Atomic energy (New York, N.Y.), 2010-11, Vol.108 (6), p.444-451

2010

Volltextzugriff (PDF)

InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates

Physica. E, Low-dimensional systems & nanostructures, 2018-01, Vol.95, p.22-26

2018

Volltextzugriff (PDF)

Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy

Materials science in semiconductor processing, 2022-05, Vol.142, p.106486, Article 106486

2022

Volltextzugriff (PDF)

Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases

Journal of electronic materials, 1999-08, Vol.28 (8), p.959-962

1999

Volltextzugriff (PDF)

Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy

Journal of crystal growth, 2003-04, Vol.251 (1), p.201-207

2003

Volltextzugriff (PDF)

Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.836-841

2009

Volltextzugriff (PDF)

Control of the critical supercooling in LPE

Journal of electronic materials, 2000-12, Vol.29 (12), p.1402-1405

2000

Volltextzugriff (PDF)

Sn doped GaSb grown by liquid phase epitaxy

Thin solid films, 2013-12, Vol.548, p.168-170

2013

Volltextzugriff (PDF)

Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE

Thin solid films, 1999-02, Vol.340 (1), p.24-27

1999

Volltextzugriff (PDF)

Study of the pseudo-(1 x 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al sub(2)O sub(3) heterostructures grown by PA-MBE

Journal of crystal growth, 2013-09, Vol.378, p.295-298

2013

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Non-amphoteric N-type doping with Sn of GaAs(631) layers grown by molecular beam epitaxy

Estimation of the instable composition areas and its dependence on the thickness of GalnAsSb layers grown on different substrates

Strain and anisotropy effects studied in InAs/GaAs(221) quantum dashes by Raman spectroscopy

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Si-doped AlGaAs/GaAs(631)A heterostructures grown by MBE as a function of the As-pressure

Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE

Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

High Prevalence of Anal Human Papillomavirus–Associated Cancer Precursors in a Contemporary Cohort of Asymptomatic HIV-Infected Women

Prevalence of and Risk Factors for Anal Oncogenic Human Papillomavirus Infection Among HIV-Infected Women in France in the Combination Antiretroviral Therapy Era

Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell

Investigation of the “composition-pulling or lattice-latching” effect in LPE

P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE

Investigation of the phase diagram of the Pb–Ga–Sb system

GaSb grown from Sn solvent at low temperatures by LPE

GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

First results of ecological rehabilitation of a temporary storage site for spent nuclear fuel and radioactive wastes in Guba Chervyanaya

InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates

Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy

Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases

Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy

Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

Control of the critical supercooling in LPE

Sn doped GaSb grown by liquid phase epitaxy

Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE

Study of the pseudo-(1 x 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al sub(2)O sub(3) heterostructures grown by PA-MBE

Suchergebnisse filtern