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Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Acta materialia, 2017-10, Vol.139, p.215-225

2017

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Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Journal of applied physics, 2024-01, Vol.135 (2)

2024

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Dependence of the hardness of AlxGa1−xAs on composition and effect of oxidation

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2013-03, Vol.564, p.408-412

2013

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Comparison of arsenide and phosphide based graded buffer layers used in inverted metamorphic solar cells

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Temperature dependence of hydrogen-induced exfoliation of InP

Applied physics letters, 2004-07, Vol.85 (2), p.236-238

2004

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Strain evolution in hydrogen-implanted silicon

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A177-A180

2003

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Thermal conductivity of nanoporous bismuth thin films

Applied physics letters, 2004-03, Vol.84 (11), p.1883-1885

2004

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Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

Journal of crystal growth, 2008-02, Vol.310 (3), p.562-569

2008

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Study of the initial stage of electroless Ni deposition on Si (100) substrates in aqueous alkaline solution

Surface & coatings technology, 2006-12, Vol.201 (6), p.2724-2732

2006

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Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals

Journal of crystal growth, 2002-04, Vol.237, p.2082-2090

2002

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Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Journal of physics. D, Applied physics, 2005-05, Vol.38 (10A), p.A174-A178

2005

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Chemical Mechanical Polishing of GaN

Journal of the Electrochemical Society, 2008, Vol.155 (2), p.H113

2008

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Development of native, single crystal AlN substrates for device applications

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1667-1671

2006

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Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Journal of electronic materials, 2005-06, Vol.34 (6), p.859-863

2005

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Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC

Journal of physics. D, Applied physics, 2005-05, Vol.38 (10A), p.A93-A98

2005

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The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters

Journal of the Electrochemical Society, 2007, Vol.154 (4), p.H293

2007

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SiC substrate defects and III-N heteroepitaxy

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A102-A106

2003

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Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

Journal of crystal growth, 2007-02, Vol.299 (2), p.277-281

2007

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Chemical Mechanical Polishing of Exfoliated III-V Layers

ECS transactions, 2009, Vol.16 (8), p.295-302

2009

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X-ray scattering techniques for assessment of III–V wafer bonding

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A236-A240

2003

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Wafer bonding for III-V on insulator structures

Journal of electronic materials, 2003-08, Vol.32 (8), p.877-881

2003

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Direct Wafer Bonding of GaN for Power Devices Applications

ECS transactions, 2018-07, Vol.86 (5), p.23-29

2018

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High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

Applied physics letters, 2000-05, Vol.76 (19), p.2680-2682

2000

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Structural Characterization of Dot-Core GaN Substrates with Annealing Under Growth-Like Conditions Using Synchrotron Monochromatic X-ray Topography

ECS journal of solid state science and technology, 2021-04, Vol.10 (4), p.45010

2021

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The Structural Evolution of Dot-Core GaN Substrates with Annealing Under Growth-Like Conditions

ECS transactions, 2020-09, Vol.98 (6), p.15-20

2020

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Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Dependence of the hardness of AlxGa1−xAs on composition and effect of oxidation

Comparison of arsenide and phosphide based graded buffer layers used in inverted metamorphic solar cells

Temperature dependence of hydrogen-induced exfoliation of InP

Strain evolution in hydrogen-implanted silicon

Thermal conductivity of nanoporous bismuth thin films

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

Study of the initial stage of electroless Ni deposition on Si (100) substrates in aqueous alkaline solution

Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals

Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Chemical Mechanical Polishing of GaN

Development of native, single crystal AlN substrates for device applications

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC

The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters

SiC substrate defects and III-N heteroepitaxy

Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

Chemical Mechanical Polishing of Exfoliated III-V Layers

X-ray scattering techniques for assessment of III–V wafer bonding

Wafer bonding for III-V on insulator structures

Direct Wafer Bonding of GaN for Power Devices Applications

High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

Structural Characterization of Dot-Core GaN Substrates with Annealing Under Growth-Like Conditions Using Synchrotron Monochromatic X-ray Topography

The Structural Evolution of Dot-Core GaN Substrates with Annealing Under Growth-Like Conditions

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