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Limb salvage after endovascular recanalization of native arterial occlusions in patients with failed lower extremity bypass grafts

Journal of vascular and interventional radiology, 2013-04, Vol.24 (4), p.S16-S16

2013

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Accelerated lymphangiography: an alternative method to evaluate the lymphangitic system

Journal of vascular and interventional radiology, 2012-08, Vol.23 (8), p.1115-1115

2012

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Abstract No. 290: Aggressive management of chronic deep venous thrombosis: technical and clinical outcomes

Journal of vascular and interventional radiology, 2012-03, Vol.23 (3), p.S117-S118

2012

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Abstract No. 430: Accelerated lymphangiography: an alternative method to evaluate the lymphangitic system

Journal of vascular and interventional radiology, 2012-03, Vol.23 (3), p.S170-S171

2012

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Radiation induced defects in MOVPE grown n-GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-02, Vol.71 (1-3), p.100-103

2000

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Defect characterization by DLTS of AlGaN UV Schottky photodetectors

Physica. B, Condensed matter, 2001-12, Vol.308, p.1189-1192

2001

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Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.84-87

1999

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Processing-induced electron traps in n-type GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.102-104

2001

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8:24 AM Abstract No. 15 - Limb salvage after endovascular recanalization of native arterial occlusions in patients with failed lower extremity bypass grafts

Journal of vascular and interventional radiology, 2013-04, Vol.24 (4), p.S16-S16

2013

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Electrical characterization of low temperature He-ion irradiated GaN

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.437-440

1999

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Metallisation induced electron traps in epitaxially grown n-type GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-02, Vol.71 (1-3), p.77-81

2000

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103: Poor outcome of autologous-bone marrow transplant (auto-BMT) following failed peripheral blood stem cell (PBSC) mobilization

Biology of blood and marrow transplantation, 2007, Vol.13 (2), p.40-41

2007

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Conduction models in polyaniline: The effect of temperature on the current–voltage properties of polyaniline over the temperature range 30< T(K)<300

Synthetic metals, 2002-03, Vol.127 (1), p.285-289

2002

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Conduction models in polyaniline

Synthetic metals, 2002-03, Vol.127 (1-3), p.285-289

2002

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Effect of sputter voltage on the electrical characteristics of argon ion sputtered n-type GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-04, Vol.67 (1), p.410-414

1992

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Characterization of electrical charge transfer in conducting polyaniline over the temperature range [formula omitted]

Synthetic metals, 2002-03, Vol.127 (1), p.279-283

2002

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Effects of bone morphogenetic proteins (BMPs) on cell kinetics of osteoblast cultures

Bone (New York, N.Y.), 1995-06, Vol.16 (6), p.686-686

1995

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Argon bombardment-induced topography and sputter yields on Si 0.84Ge 0.16

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.193 (1), p.739-744

2002

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Recent progresses of the BOLD investigation towards UV detectors for the ESA Solar Orbiter

Diamond and related materials, 2002-03, Vol.11 (3-6), p.427-432

2002

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Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.95-97

2001

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Electron traps created in n-type GaN during 25 keV hydrogen implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.6-9

2002

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Argon bombardment-induced topography and sputter yields on Si0.84Ge0.16

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-06, Vol.193 (1-4), p.739-744

2002

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The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-05, Vol.90 (1), p.349-353

1994

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Metastable-like behaviour of a sputter deposition-induced electron trap in n-GaN

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.92-95

1999

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Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys

Thin solid films, 1999, Vol.343, p.416-419

1999

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Limb salvage after endovascular recanalization of native arterial occlusions in patients with failed lower extremity bypass grafts

Accelerated lymphangiography: an alternative method to evaluate the lymphangitic system

Abstract No. 290: Aggressive management of chronic deep venous thrombosis: technical and clinical outcomes

Abstract No. 430: Accelerated lymphangiography: an alternative method to evaluate the lymphangitic system

Radiation induced defects in MOVPE grown n-GaN

Defect characterization by DLTS of AlGaN UV Schottky photodetectors

Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts

Processing-induced electron traps in n-type GaN

8:24 AM Abstract No. 15 - Limb salvage after endovascular recanalization of native arterial occlusions in patients with failed lower extremity bypass grafts

Electrical characterization of low temperature He-ion irradiated GaN

Metallisation induced electron traps in epitaxially grown n-type GaN

103: Poor outcome of autologous-bone marrow transplant (auto-BMT) following failed peripheral blood stem cell (PBSC) mobilization

Conduction models in polyaniline: The effect of temperature on the current–voltage properties of polyaniline over the temperature range 30< T(K)<300

Conduction models in polyaniline

Effect of sputter voltage on the electrical characteristics of argon ion sputtered n-type GaAs

Characterization of electrical charge transfer in conducting polyaniline over the temperature range [formula omitted]

Effects of bone morphogenetic proteins (BMPs) on cell kinetics of osteoblast cultures

Argon bombardment-induced topography and sputter yields on Si 0.84Ge 0.16

Recent progresses of the BOLD investigation towards UV detectors for the ESA Solar Orbiter

Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation

Electron traps created in n-type GaN during 25 keV hydrogen implantation

Argon bombardment-induced topography and sputter yields on Si0.84Ge0.16

The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs

Metastable-like behaviour of a sputter deposition-induced electron trap in n-GaN

Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys

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