UB Paderborn / Katalog / Suche / in CDI

Performance of standard and double-sided 3D-radiation detectors under the impact of a temperature pulse

Electronics letters, 2015-10, Vol.51 (21), p.1668-1670

2015

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Phase noise modeling in LC oscillators implemented in SiGe technology

Journal of semiconductors, 2013-02, Vol.34 (2), p.60-66

2013

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L'integration de puissance: l'origine des effets parasites induits par un transistor bipolaire à grille isolée sur sa logique de commande et de protection

Semiconductor science and technology, 1998-10, Vol.13 (10), p.1193-1204

1998

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Design of complementary LDMOS in 0.35 [micro]m BiCMOS technology for smart integration

European physical journal. Applied physics, 2012-01, Vol.57 (1)

2012

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A Simple Way for Substrate Noise Modeling in Mixed-Signal ICs

IEEE transactions on circuits and systems. 1, Fundamental theory and applications, 2006-10, Vol.53 (10), p.2167-2177

2006

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IEEE_Xplore

Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.257-261

2003

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Effet tunnel dans la diode émetteur/base d'un transistor bipolaire compatible CMOS dédié à la RF

Physica status solidi. B. Basic research, 1999, Vol.214 (1), p.203-215

1999

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Procédés thermiques rapides pour la fabrication de structures bipolaires dédiées à la ULSI

Physica status solidi. A, Applied research, 1992-12, Vol.134 (2), p.359-371

1992

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MARKOV CHAIN APPROACH OF DIGITAL FLOW DISTURBANCES ON SUPPLIES VIA HETEROGENEOUS INTEGRATED CIRCUIT SUBSTRATE

International journal of modelling & simulation, 2010-01, Vol.30 (2), p.1

2010

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Design of complementary LDMOS in 0.35 μm BiCMOS technology for smart integration

European physical journal. Applied physics, 2012-01, Vol.57 (1), p.10103

2012

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Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

Pramāṇa, 2009-03, Vol.72 (3), p.587-599

2009

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Matrix method to determine a steady solution of the Boltzmann equation in III-V compound semiconductors

Journal of applied physics, 1991-03, Vol.69 (5), p.3104-3108

GONTRAND, C

1991

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FPGA and Mixed FPGA-DSP Implementations of Electrical Drive Algorithms

Field-Programmable Logic and Applications: Reconfigurable Computing Is Going Mainstream, 2002, Vol.2438, p.1144-1147

2002

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A high-performance lateral PNP transistor structure

IEEE transactions on electron devices, 1996-04, Vol.43 (4), p.666-667

1996

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IEEE_Xplore

Volume and grain boundary diffusivity of boron in polycrystalline silicon during rapid thermal annealing

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.B102 (1-3), p.257-261

2003

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Test bed for low-cost measurement of AM/AM and AM/PM effects in RF PAs based on FPGA

2015 International Conference on Electronics, Communications and Computers (CONIELECOMP), 2015, p.87-92

2015

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About boron and arsenic diffusions in polycrystalline silicon under rapid thermal oxidation

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-03, Vol.38 (1-2), p.41-45

1996

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A new model for codiffusion in polycrystalline silicon specified to BiCMOS technology

Semiconductor science and technology, 1995-10, Vol.10 (10), p.1393-1403

1995

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Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization

Synthetic metals, 1997-11, Vol.90 (3), p.217-221

1997

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Un nouveau modèle de codiffusion dans le silicum polycristallin utilisé en technologie BiCMOS

Semiconductor science and technology, 1995, Vol.10 (10), p.1393-1403

1995

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Analyse des diffusions du bore et de l'arsenic du silicium polycrystallin vers le silicium monocrystallin lors de procédés thermiques rapides

Journal of physics. Condensed matter, 1991, Vol.3 (18), p.3091-3098

1991

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Complementary LDMOSFET in 0.35μm BiCMOS technology-characterization and modeling

2010 IEEE International Symposium on Industrial Electronics, 2010, p.736-741

2010

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IEEE_Xplore

The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-05, Vol.112 (1-4), p.196-200

1996

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Investigation of BF2+ implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-12, Vol.120 (1-4), p.68-73

1996

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Diffusion and codiffusion of boron and arsenic in monocrystalline silicon during rapid thermal annealings

Semiconductor science and technology, 1992-02, Vol.7 (2), p.181-187

1992

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Performance of standard and double-sided 3D-radiation detectors under the impact of a temperature pulse

Phase noise modeling in LC oscillators implemented in SiGe technology

L'integration de puissance: l'origine des effets parasites induits par un transistor bipolaire à grille isolée sur sa logique de commande et de protection

Design of complementary LDMOS in 0.35 [micro]m BiCMOS technology for smart integration

A Simple Way for Substrate Noise Modeling in Mixed-Signal ICs

Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing

Effet tunnel dans la diode émetteur/base d'un transistor bipolaire compatible CMOS dédié à la RF

Procédés thermiques rapides pour la fabrication de structures bipolaires dédiées à la ULSI

MARKOV CHAIN APPROACH OF DIGITAL FLOW DISTURBANCES ON SUPPLIES VIA HETEROGENEOUS INTEGRATED CIRCUIT SUBSTRATE

Design of complementary LDMOS in 0.35 μm BiCMOS technology for smart integration

Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

Matrix method to determine a steady solution of the Boltzmann equation in III-V compound semiconductors

FPGA and Mixed FPGA-DSP Implementations of Electrical Drive Algorithms

A high-performance lateral PNP transistor structure

Volume and grain boundary diffusivity of boron in polycrystalline silicon during rapid thermal annealing

Test bed for low-cost measurement of AM/AM and AM/PM effects in RF PAs based on FPGA

About boron and arsenic diffusions in polycrystalline silicon under rapid thermal oxidation

A new model for codiffusion in polycrystalline silicon specified to BiCMOS technology

Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization

Un nouveau modèle de codiffusion dans le silicum polycristallin utilisé en technologie BiCMOS

Analyse des diffusions du bore et de l'arsenic du silicium polycrystallin vers le silicium monocrystallin lors de procédés thermiques rapides

Complementary LDMOSFET in 0.35μm BiCMOS technology-characterization and modeling

The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Investigation of BF2+ implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing

Diffusion and codiffusion of boron and arsenic in monocrystalline silicon during rapid thermal annealings

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