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9124 Phase I trial of sagopilone in combination with cisplatin as 1st-line therapy in patients with extensive-disease small-cell lung cancer (ED-SCLC)

European journal of cancer supplements, 2009, Vol.7 (2), p.542-542

2009

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Phase I trial of the novel epothilone sagopilone (ZK-EPO) in combination with cisplatin as first-line therapy in patients with extensive-disease small-cell lung cancer (ED-SCLC)

Journal of clinical oncology, 2008-05, Vol.26 (15_suppl), p.19081-19081

2008

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Geoprofiling in the Context of Civil Security: KDE Process Optimisation for Hotspot Analysis of Massive Emergency Location Data

Computational Science and Its Applications – ICCSA 2020, p.575-589

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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6328-6344

2007

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205-GHz (Al,In)N/GaN HEMTs

IEEE electron device letters, 2010-09, Vol.31 (9), p.957-959

2010

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Paediatric spine injuries in the thoracic and lumbar spine—results of the German multicentre CHILDSPINE study

European spine journal, 2024-04, Vol.33 (4), p.1574-1584

2024

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Thiol-to-amine cyclization reaction enables screening of large libraries of macrocyclic compounds and the generation of sub-kilodalton ligands

Science advances, 2019-08, Vol.5 (8), p.eaaw2851-eaaw2851

2019

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Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Journal of applied physics, 2009-12, Vol.106 (12), p.124503-124503-7

2009

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Management des Schädel-Hirn-Traumas bei Kindern und Jugendlichen

Trauma und Berufskrankheit, 2014-11, Vol.16 (Suppl 4), p.425-430

2014

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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

IEEE electron device letters, 2009-10, Vol.30 (10), p.1030-1032

2009

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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

IEEE electron device letters, 2009-08, Vol.30 (8), p.796-798

2009

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Comparative analyses of Netherton syndrome patients and Spink5 conditional knock-out mice uncover disease-relevant pathways

Communications biology, 2024-02, Vol.7 (1), p.152-152, Article 152

2024

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Die ventrale Spondylodese beim älteren Patienten - Overtreatment oder sinnvolle Therapieoption?

Zeitschrift für Orthopädie und Unfallchirurgie, 2013-06, Vol.151 (3), p.257-263

2013

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Big Data in Civil Security Research: Methods to Visualize Data for the Geovisual Analysis of Fire Brigade Operations

Computational Science and Its Applications -- ICCSA 2015, p.415-425

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Small-signal characteristics of AlInN/GaN HEMTs

Electronics letters, 2006, Vol.42 (13), p.779-780

2006

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What is the effect of ventral thoracoscopic spondylodesis (VTS) on elderly patients and what is the medium-term outcome?

Zeitschrift fur Orthopadie und Unfallchirurgie, 2013-06, Vol.151 (3), p.257

2013

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Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (26), p.263515-263515-3

2010

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

IEEE electron device letters, 2010-04, Vol.31 (4), p.293-295

2010

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Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F T = 143 GHz

Applied physics express, 2010-09, Vol.3 (9), p.94101

2010

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Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Electronics letters, 2008, Vol.44 (11), p.696-698

2008

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Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Electronics letters, 2007, Vol.43 (5), p.309-311

2007

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High-speed and low-noise AlInN/GaN HEMTs on SiC

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.429-433

2011

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Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

IEEE transactions on electron devices, 2010-09, Vol.57, p.2144-2154

2010

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Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2144-2154

2010

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Modularized CRISPR/dCas9 Effector Toolkit for Target-Specific Gene Regulation

ACS synthetic biology, 2014-12, Vol.3 (12), p.986-989

2014

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9124 Phase I trial of sagopilone in combination with cisplatin as 1st-line therapy in patients with extensive-disease small-cell lung cancer (ED-SCLC)

Phase I trial of the novel epothilone sagopilone (ZK-EPO) in combination with cisplatin as first-line therapy in patients with extensive-disease small-cell lung cancer (ED-SCLC)

Geoprofiling in the Context of Civil Security: KDE Process Optimisation for Hotspot Analysis of Massive Emergency Location Data

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

205-GHz (Al,In)N/GaN HEMTs

Paediatric spine injuries in the thoracic and lumbar spine—results of the German multicentre CHILDSPINE study

Thiol-to-amine cyclization reaction enables screening of large libraries of macrocyclic compounds and the generation of sub-kilodalton ligands

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Management des Schädel-Hirn-Traumas bei Kindern und Jugendlichen

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Comparative analyses of Netherton syndrome patients and Spink5 conditional knock-out mice uncover disease-relevant pathways

Die ventrale Spondylodese beim älteren Patienten - Overtreatment oder sinnvolle Therapieoption?

Big Data in Civil Security Research: Methods to Visualize Data for the Geovisual Analysis of Fire Brigade Operations

Small-signal characteristics of AlInN/GaN HEMTs

What is the effect of ventral thoracoscopic spondylodesis (VTS) on elderly patients and what is the medium-term outcome?

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F T = 143 GHz

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

High-speed and low-noise AlInN/GaN HEMTs on SiC

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Modularized CRISPR/dCas9 Effector Toolkit for Target-Specific Gene Regulation

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