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Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications

Journal of applied physics, 2020-10, Vol.128 (13)

2020

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Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase

Applied physics letters, 2023-07, Vol.123 (3)

2023

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Sub-10-nm ferroelectric Gd-doped HfO2 layers

Applied physics letters, 2022-04, Vol.120 (17)

2022

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Electrical properties of epoxy/silver nanocomposites

Journal of applied physics, 2006-01, Vol.99 (2), p.024308-024308-8

2006

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Resistance switching in HfO2 metal-insulator-metal devices

Journal of applied physics, 2010-04, Vol.107 (7)

2010

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Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

Microelectronic engineering, 2011-05, Vol.88 (5), p.814-816

2011

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Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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From MEMRISTOR to MEMImpedance device

Applied physics letters, 2016-02, Vol.108 (5), p.53502-132

2016

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High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric

Applied physics letters, 2017-06, Vol.110 (24)

2017

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Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Journal of materials science. Materials in electronics, 2020-08, Vol.31 (16), p.13487-13495

2020

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Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

Journal of applied physics, 2016-06, Vol.119 (24)

2016

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Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

Applied physics letters, 2010-05, Vol.96 (19)

2010

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Thin solid films, 2012-05, Vol.520 (14), p.4551-4555

2012

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Stress-induced leakage current and trap generation in HfO2 thin films

Journal of applied physics, 2012-01, Vol.112 (7)

2012

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High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

Applied physics letters, 2009-06, Vol.94 (25)

2009

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Dielectric response of Cu∕amorphous BaTiO3∕Cu capacitors

Journal of applied physics, 2007-04, Vol.101 (7)

2007

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Water absorption in a glass-mica-epoxy composite - [I: Influence on Electrical Properties]

IEEE transactions on dielectrics and electrical insulation, 2009-02, Vol.16 (1), p.1-10

2009

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Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Thin solid films, 2012-12, Vol.525, p.20-27

2012

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Reliability of HfO2 metal-insulator-metal capacitors under AC stress

Journal of physics. D, Applied physics, 2016-03, Vol.49 (16)

2016

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Water absorption in a glass-mica-epoxy composite - I: Influence on Electrical Properties

IEEE transactions on dielectrics and electrical insulation, 2009-01, Vol.16 (1)

2009

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Correlations between first-principles calculations and electric properties of HfO 2 :Al 2 O 3 alloys for metal–insulator–metal (MIM) capacitor applications

Journal of applied physics, 2020-10, Vol.128 (13)

2020

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Effect of nitrogen addition on the properties of C:F thin films deposited by RF sputtering

European physical journal. Applied physics, 2005-10, Vol.32 (1), p.15-21

Gonon, P.

2005

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Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

Journal of applied physics, 2009-09, Vol.106 (6)

2009

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Dielectric properties of fluorocarbon thin films deposited by radio frequency sputtering of polytetrafluoroethylene

Journal of applied physics, 2002-10, Vol.92 (8), p.4584-4589

2002

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Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

Physica status solidi. PSS-RRL. Rapid research letters, 2014-07, Vol.8 (7), p.634-638

2014

Volltextzugriff (PDF)

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Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications

Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase

Sub-10-nm ferroelectric Gd-doped HfO2 layers

Electrical properties of epoxy/silver nanocomposites

Resistance switching in HfO2 metal-insulator-metal devices

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

From MEMRISTOR to MEMImpedance device

High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric

Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

Stress-induced leakage current and trap generation in HfO2 thin films

High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

Dielectric response of Cu∕amorphous BaTiO3∕Cu capacitors

Water absorption in a glass-mica-epoxy composite - [I: Influence on Electrical Properties]

Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Reliability of HfO2 metal-insulator-metal capacitors under AC stress

Water absorption in a glass-mica-epoxy composite - I: Influence on Electrical Properties

Correlations between first-principles calculations and electric properties of HfO 2 :Al 2 O 3 alloys for metal–insulator–metal (MIM) capacitor applications

Effect of nitrogen addition on the properties of C:F thin films deposited by RF sputtering

Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors

Dielectric properties of fluorocarbon thin films deposited by radio frequency sputtering of polytetrafluoroethylene

Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements

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