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Recover User’s Private Training Image Data by Gradient in Federated Learning

Sensors (Basel, Switzerland), 2022-09, Vol.22 (19), p.7157

2022

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Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Focal-Plane Arrays

IEEE journal of quantum electronics, 2019-12, Vol.55 (6), p.1-8

2019

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Diabetes risk prediction model based on community follow-up data using machine learning

Preventive medicine reports, 2023-10, Vol.35, p.102358-102358, Article 102358

2023

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An Analysis of the Application of Flipped Class Teaching Mode in Photoshop Courses in Higher Vocational Colleges

Journal of physics. Conference series, 2019-06, Vol.1237 (2), p.22129

2019

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Analysis of Energy-aware M2M Routing Protocol for Internet of Things with Low Energy Consumption

Journal of physics. Conference series, 2019-06, Vol.1237 (2), p.22136

2019

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Impact of SiNx passivation on the surface properties of InGaAs photo-detectors

Journal of applied physics, 2015-07, Vol.118 (3)

2015

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Diabetes prediction model for unbalanced community follow-up data set based on optimal feature selection and scorecard

Digital health, 2024-01, Vol.10, p.20552076241236370-20552076241236370

2024

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A feature optimization study based on a diabetes risk questionnaire

Frontiers in public health, 2024, Vol.12, p.1328353-1328353

2024

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Ultra-low spectral reflectances of InP Mie resonators on an InGaAs/InP focal plane array

AIP advances, 2020-06, Vol.10 (6), p.065233-065233-5

2020

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2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT

AIP advances, 2014-08, Vol.4 (8), p.087135-087135-7

2014

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The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor

AIP advances, 2015-07, Vol.5 (7), p.077128-077128-5

2015

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Measurement and Simulation of Optical Crosstalk of Infrared Detector Modules

Guangxué xuébào, 2016-04, Vol.36 (4), p.404001

2016

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Design and Fabrication of InGaAs FPAs Integrated With InP Mie Resonators

IEEE photonics technology letters, 2022-06, Vol.34 (12), p.641-644

2022

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Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology

Japanese Journal of Applied Physics, 2015-03, Vol.54 (4S), p.4

2015

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Surface leakage behaviors of 2.6 μm In0.83Ga0.17As photodetectors as a function of mesa etching depth

IEEE journal of quantum electronics, 2023-12, p.1-1

2023

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Corrections to “Surface Leakage Behaviors of 2.6 μm In 0.83 Ga 0.17 As Photodetectors as a Function of Mesa Etching Depth” [Apr 20 doi: 10.1109/JQE.2020.2970745]

IEEE journal of quantum electronics, 2023-12, Vol.59 (6), p.1-1

2023

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Measurement and error analysis of low temperature deformation of infrared focal plane arrays

Infrared and Laser Engineering, 2016-01, Vol.45 (5), p.504001

2016

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Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment

Infrared and Laser Engineering, 2016-05, Vol.45 (5), p.520002

2016

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Microstructure and Mechanical Properties of the Joint between Si 3 N 4 and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Advanced engineering materials, 2023-11, Vol.25 (21)

2023

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Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth”

IEEE journal of quantum electronics, 2023-01, Vol.59 (6), p.1

2023

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Improved interface and dark current properties of InGaAs photodiodes by high-density N2 plasma and stoichiometric Si3N4 passivation

Infrared physics & technology, 2022-05, Vol.122, p.104084, Article 104084

2022

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Investigation on the failure of the space HgCdTe detector with long-term storage tests

Engineering failure analysis, 2024-12, Vol.166, p.108904, Article 108904

2024

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Interfacial microstructure and mechanical properties of Si3N4/Invar joints using Ag–Cu–In–Ti with Cu foil as an interlayer

Materialprüfung, 2024-02, Vol.66 (2), p.207-214

2024

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Recover User’s Private Training Image Data by Gradient in Federated Learning

Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector

Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Focal-Plane Arrays

Diabetes risk prediction model based on community follow-up data using machine learning

An Analysis of the Application of Flipped Class Teaching Mode in Photoshop Courses in Higher Vocational Colleges

Analysis of Energy-aware M2M Routing Protocol for Internet of Things with Low Energy Consumption

Impact of SiNx passivation on the surface properties of InGaAs photo-detectors

Diabetes prediction model for unbalanced community follow-up data set based on optimal feature selection and scorecard

Review of Geostationary Interferometric Infrared Sounder

A feature optimization study based on a diabetes risk questionnaire

Ultra-low spectral reflectances of InP Mie resonators on an InGaAs/InP focal plane array

2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT

The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor

Measurement and Simulation of Optical Crosstalk of Infrared Detector Modules

Design and Fabrication of InGaAs FPAs Integrated With InP Mie Resonators

Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology

Surface leakage behaviors of 2.6 μm In0.83Ga0.17As photodetectors as a function of mesa etching depth

Corrections to “Surface Leakage Behaviors of 2.6 μm In 0.83 Ga 0.17 As Photodetectors as a Function of Mesa Etching Depth” [Apr 20 doi: 10.1109/JQE.2020.2970745]

Measurement and error analysis of low temperature deformation of infrared focal plane arrays

Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment

Microstructure and Mechanical Properties of the Joint between Si 3 N 4 and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth”

Improved interface and dark current properties of InGaAs photodiodes by high-density N2 plasma and stoichiometric Si3N4 passivation

Investigation on the failure of the space HgCdTe detector with long-term storage tests

Interfacial microstructure and mechanical properties of Si3N4/Invar joints using Ag–Cu–In–Ti with Cu foil as an interlayer

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