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Correction of response spectra of quantum type photodetectors measured by FTIR

Hong wai yu hao mi bo xue bao, 2015-12, Vol.34 (6), p.737-743

2015

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短波红外InGaAs焦平面研究进展

红外与毫米波学报, 2022-02, Vol.41 (1), p.129-138

2022

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短波红外InGaAs焦平面噪声特性

红外与毫米波学报, 2019-08, Vol.38 (4), p.528-534

2019

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Performance of InGaAs detector with SiN diffusion mask

Hong wai yu hao mi bo xue bao, 2014-08, Vol.33 (4), p.333-336

2014

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32 x 32 pixel planar InGaAs/InP detector with response extended to visible wavelength band

Hong wai yu hao mi bo xue bao, 2015-06, Vol.34 (3), p.286-290

2015

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TN21ATemperature-dependent characteristics of ohmic contact in hetero-junction InP/InGaAs detector

Hong wai yu hao mi bo xue bao, 2015-12, Vol.34 (6), p.721-725

2015

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Back illuminated InGaAs detector arrays with extended-wavelength to 2.4 mu m

Hong wai yu hao mi bo xue bao, 2013-06, Vol.32 (3), p.214-219

2013

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Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

Scientific reports, 2016-02, Vol.6 (1), p.21544-21544, Article 21544

2016

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IGA-rule 17 for performance estimation of wavelength-extended InGaAs photodetectors: validity and limitations

Applied optics (2004), 2018-06, Vol.57 (18), p.D141-D144

2018

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Short-wave infrared InGaAs photodetectors and focal plane arrays

Chinese physics B, 2018-12, Vol.27 (12), p.128102

2018

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Optimum guard-ring for planar InP/InGaAs photodiode: Characterized with AFM, SCM and LBIC

Hong wai yu hao mi bo xue bao, 2010-12, Vol.29 (6), p.401-405

2010

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Inoperable pixels of 256 x 1 element linear InGaAs near-infrared focal plane arrays

Hong wai yu hao mi bo xue bao, 2011-09, Vol.30 (5), p.409-438

2011

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An effective indicator for evaluation of wavelength extending InGaAs photodetector technologies

Infrared physics & technology, 2017-06, Vol.83, p.45-50

2017

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Correction of FTIR acquired photodetector response spectra from mid-infrared to visible bands using onsite measured instrument function

Infrared physics & technology, 2018-08, Vol.92, p.78-83

2018

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Study on g irradiation effects of long-wavelength HgCdTe photovoltaic detectors with different passivate layers

Hong wai yu hao mi bo xue bao, 2010-01, Vol.29 (1), p.6

2010

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High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region

Chinese physics letters, 2007-06, Vol.24 (6), p.1735-1737

2007

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FAILURE AND FINITE ELEMENT ANALYSIS OF INDIUM SOLDER-BUMPS FOR HgCdTe DETECTORS: FAILURE AND FINITE ELEMENT ANALYSIS OF INDIUM SOLDER-BUMPS FOR HgCdTe DETECTORS

Hong wai yu hao mi bo xue bao, 2009-07, Vol.28 (3), p.194-197

2009

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Influence of 1 MeV electron irradiation on HgCdTe photoconductive detectors

Hong wai yu hao mi bo xue bao, 2004-06, Vol.23 (3), p.172-175

2004

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STUDY OF RELIABLE PACKAGING FOR IRFPA DETECTOR: STUDY OF RELIABLE PACKAGING FOR IRFPA DETECTOR

Hong wai yu hao mi bo xue bao, 2009-04, Vol.28 (2), p.85-89

2009

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Inoperable pixels of 256×1 element linear InGaAs near-infrared focal plane arrays: Inoperable pixels of 256×1 element linear InGaAs near-infrared focal plane arrays

Hong wai yu hao mi bo xue bao, 2012-03, Vol.30 (5), p.409-411

2012

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Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination: Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination

Hong wai yu hao mi bo xue bao, 2012-03, Vol.31 (1), p.11-14

2012

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Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

Semiconductor science and technology, 2008-03, Vol.23 (3), p.035031

2008

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Broadband high quantum efficiency InGaAs/InP focal plane arrays via high precision plasma thinning

Optics letters, 2019-12, Vol.44 (24), p.6037-6040

2019

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MOCVD Growth and Characterization of Epitaxial AlxGa1−xN Films

Chinese physics letters, 2007-05, Vol.24, p.1393

2007

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Short-wave infrared InGaAs photodetectors and focal plane arraysProject supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402400), the National Natural Science Foundation of China (Grant Nos. 61675225, 61605232, and 61775228), and the Shanghai Rising-Star Program, China (Grant No. 17QA1404900)

Chinese physics B, 2018-12, Vol.27 (12)

2018

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Correction of response spectra of quantum type photodetectors measured by FTIR

短波红外InGaAs焦平面研究进展

短波红外InGaAs焦平面噪声特性

Performance of InGaAs detector with SiN diffusion mask

32 x 32 pixel planar InGaAs/InP detector with response extended to visible wavelength band

TN21ATemperature-dependent characteristics of ohmic contact in hetero-junction InP/InGaAs detector

Back illuminated InGaAs detector arrays with extended-wavelength to 2.4 mu m

Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

IGA-rule 17 for performance estimation of wavelength-extended InGaAs photodetectors: validity and limitations

Short-wave infrared InGaAs photodetectors and focal plane arrays

Optimum guard-ring for planar InP/InGaAs photodiode: Characterized with AFM, SCM and LBIC

Inoperable pixels of 256 x 1 element linear InGaAs near-infrared focal plane arrays

An effective indicator for evaluation of wavelength extending InGaAs photodetector technologies

Correction of FTIR acquired photodetector response spectra from mid-infrared to visible bands using onsite measured instrument function

Study on g irradiation effects of long-wavelength HgCdTe photovoltaic detectors with different passivate layers

High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region

FAILURE AND FINITE ELEMENT ANALYSIS OF INDIUM SOLDER-BUMPS FOR HgCdTe DETECTORS: FAILURE AND FINITE ELEMENT ANALYSIS OF INDIUM SOLDER-BUMPS FOR HgCdTe DETECTORS

Influence of 1 MeV electron irradiation on HgCdTe photoconductive detectors

STUDY OF RELIABLE PACKAGING FOR IRFPA DETECTOR: STUDY OF RELIABLE PACKAGING FOR IRFPA DETECTOR

Inoperable pixels of 256×1 element linear InGaAs near-infrared focal plane arrays: Inoperable pixels of 256×1 element linear InGaAs near-infrared focal plane arrays

Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination: Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination

Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

Broadband high quantum efficiency InGaAs/InP focal plane arrays via high precision plasma thinning

MOCVD Growth and Characterization of Epitaxial AlxGa1−xN Films

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