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Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO

Journal of applied physics, 2020-06, Vol.127 (21)

2020

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Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Radiation hardness of single-crystalline zinc oxide films

Physica status solidi. C, 2012-07, Vol.9 (7), p.1577-1579

2012

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Proton radiation effects in nitride lasers and light emitting diodes

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.231-235

2007

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8 MeV Proton Irradiation Damage and Its Recovery by Annealing on Single-Crystalline Zinc Oxide Crystals

MRS proceedings, 2012, Vol.1432 (1), p.159-170, Article mrss12-1432-g10-02

2012

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Gas source molecular beam epitaxy growth of GaN on C-, A-, R- and M-plane sapphire and silica glass substrates

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6A), p.L661-L664

1997

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High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3A), p.L289-L292

1996

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Proton radiation effects in quantum dot lasers

Applied surface science, 2008-11, Vol.255 (3), p.676-678

2008

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GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1436

1998

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Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP) n (InP) n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 1996, Vol.35 (8R), p.4225

1996

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Scanning tunneling microscopy/spectroscopy study of self-organized quantum dot structures formed in GaP/InP short-period superlattices

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.3818-3820

1997

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Improved growth kinetic model for metalorganic molecular beam epitaxy using triethylgallium

Japanese Journal of Applied Physics, 1993-06, Vol.32 (6A), p.2786-2793

1993

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Photoluminescence wavelength dependence on layer structure of GaP/AlP modulated superlattices

Japanese Journal of Applied Physics, 1996-08, Vol.35 (8A), p.L956-L959

1996

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Selective area epitaxy of GaSb by metal-organic molecular beam epitaxy

Japanese Journal of Applied Physics, 1993, Vol.32 (5B), p.L703-L706

1993

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In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic

Japanese Journal of Applied Physics, 1996-07, Vol.35 (7), p.3814-3818

1996

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Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.3810-3813

1997

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Irradiation Effect of 8MeV Protons on Single-Crystalline Zinc Oxide Films

Journal of the Society of Materials Science, Japan, 2011/11/15, Vol.60(11), pp.988-993

2011

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Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1540

1998

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Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 1999-02, Vol.38 (2S), p.1026

1999

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Substrate orientation dependence of optical properties of GaP/AlP short-period superlattices

Japanese Journal of Applied Physics, 1996-11, Vol.35 (11A), p.L1391

1996

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Very low resistance ohmic contacts to n-GaN

Journal of electronic materials, 1998-07, Vol.27 (7), p.829-832

1998

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Possibility for the discrimination of submonolayer InAs and GaAs grown on tilted GaAs substrate

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3B), p.L362-L365

1996

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High density of self-organized quantum dots formed in (GaP) n(InP) m short period superlattices grown on GaAs ( N11)

Applied surface science, 1997-04, Vol.113, p.97-102

1997

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Scanning tunneling microscopy/scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures

Japanese Journal of Applied Physics, 1996-06, Vol.35 (6B), p.3743-3748

1996

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CuAu-Type Ordering Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate

Japanese Journal of Applied Physics, 1999-12, Vol.38 (12A), p.L1372

1999

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Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO

Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam

Radiation hardness of single-crystalline zinc oxide films

Proton radiation effects in nitride lasers and light emitting diodes

8 MeV Proton Irradiation Damage and Its Recovery by Annealing on Single-Crystalline Zinc Oxide Crystals

Gas source molecular beam epitaxy growth of GaN on C-, A-, R- and M-plane sapphire and silica glass substrates

High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns

Proton radiation effects in quantum dot lasers

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP) n (InP) n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy

Scanning tunneling microscopy/spectroscopy study of self-organized quantum dot structures formed in GaP/InP short-period superlattices

Improved growth kinetic model for metalorganic molecular beam epitaxy using triethylgallium

Photoluminescence wavelength dependence on layer structure of GaP/AlP modulated superlattices

Selective area epitaxy of GaSb by metal-organic molecular beam epitaxy

In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic

Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy

Irradiation Effect of 8MeV Protons on Single-Crystalline Zinc Oxide Films

Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices

Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy

Substrate orientation dependence of optical properties of GaP/AlP short-period superlattices

Very low resistance ohmic contacts to n-GaN

Possibility for the discrimination of submonolayer InAs and GaAs grown on tilted GaAs substrate

High density of self-organized quantum dots formed in (GaP) n(InP) m short period superlattices grown on GaAs ( N11)

Scanning tunneling microscopy/scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures

CuAu-Type Ordering Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs (011) Substrate

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