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Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting Operation

Sensors (Basel, Switzerland), 2021-08, Vol.21 (16), p.5287

2021

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Ultra-Low Capacitance Spot PIN Photodiodes

IEEE photonics journal, 2023-04, Vol.15 (2), p.1-6

2023

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Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS

IEEE photonics journal, 2022-04, Vol.14 (2), p.1-8

2022

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Ultra-sensitive PIN-Photodiode Receiver

IEEE photonics journal, 2023-06, Vol.15 (3), p.1-9

2023

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Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum Applications

Sensors (Basel, Switzerland), 2023-12, Vol.23 (24), p.9644

2023

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Area and Bandwidth Enhancement of an n + /p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology

Sensors (Basel, Switzerland), 2023-03, Vol.23 (7), p.3403

2023

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Inductor-Less Low-Power Low-Voltage Cross-Coupled Regulated-Cascode Transimpedance Amplifier Circuit in CMOS Technology

IEEE access, 2024, Vol.12, p.147106-147114

2024

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Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

Micromachines (Basel), 2020-09, Vol.11 (9), p.869

2020

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A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode

IEEE photonics journal, 2023-06, Vol.15 (3), p.1-9

2023

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Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays

Sensors (Basel, Switzerland), 2016-05, Vol.16 (6), p.761-761

2016

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Cascoded active quencher using a bipolar transistor for fast discharging of a single-photon avalanche

Optical engineering, 2024-07, Vol.63 (7)

2024

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Highly sensitive hybrid optical receiver with a compact 1.4 GHz linear transimpedance amplifier in 55 nm CMOS

Optical engineering, 2023-09, Vol.62 (9)

2023

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Integrated Fast-Sensing Triple-Voltage SPAD Quenching/Resetting Circuit for Increasing PDP

IEEE photonics technology letters, 2021-02, Vol.33 (3), p.139-142

2021

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Monolithically Integrated SiON Photonic Circuit and Silicon Single-Photon Detectors for NIR-Range Operation

Journal of lightwave technology, 2024-04, Vol.42 (8), p.2831-2841

2024

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A Comparator With Reduced Delay Time in 65-nm CMOS for Supply Voltages Down to 0.65 V

IEEE transactions on circuits and systems. II, Express briefs, 2009-11, Vol.56 (11), p.810-814

2009

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Area and Power Efficient 3-8.8-GHz IR-UWB Transmitter With Spectrum Tunability

IEEE microwave and wireless components letters, 2020-01, Vol.30 (1), p.39-42

2020

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Laser Diode Current Driver With (1-t/T)^ Time Dependence in 0.35- \mu\text BiCMOS Technology for Quantum Random Number Generators

IEEE transactions on circuits and systems. II, Express briefs, 2017-05, Vol.64 (5), p.510-514

2017

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Single-pixel postprocessing-free 5 Mbps quantum random number generator using a single-photon avalanche diode detector and a T/(T − t) pulse-shaped laser driver

Optical engineering, 2020-12, Vol.59 (12)

2020

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A 54.2-dB Current Gain Dynamic Range, 1.78-GHz Gain-Bandwidth Product CMOS VCCA2

IEEE transactions on circuits and systems. II, Express briefs, 2019-01, Vol.66 (1), p.46-50

2019

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A 54.2-dB Current Gain Dynamic Range, 1.78-GHz Gain-Bandwidth Product CMOS VCCA 2

IEEE transactions on circuits and systems. II, Express briefs, 2019-01, Vol.66 (1), p.46-50

2019

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Latch-Type Optical Receiver With Integrated pin Photodiodes

IEEE photonics technology letters, 2017-04, Vol.29 (8), p.675-678

2017

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A 10 Gb/s 0.25 μm SiGe modulator driver for photonic-integration

Analog integrated circuits and signal processing, 2014-04, Vol.79 (1), p.15-25

2014

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Ultra-low power low-complexity 3–7.5 GHz IR-UWB transmitter with spectrum tunability

IET circuits, devices & systems, 2020-07, Vol.14 (4), p.521-527

2020

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High Slew-Rate Quadruple-Voltage Mixed-Quenching Active-Resetting Circuit for SPADs in 0.35-μm CMOS for Increasing PDP

IEEE solid-state circuits letters, 2021, Vol.4, p.18-21

2021

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1.3 V supply voltage, high bandwidth, 100 nA minimum amplitude BiCMOS voltage-controlled current source

Analog integrated circuits and signal processing, 2019-01, Vol.98 (1), p.209-219

2019

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Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting Operation

Ultra-Low Capacitance Spot PIN Photodiodes

Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS

Ultra-sensitive PIN-Photodiode Receiver

Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum Applications

Area and Bandwidth Enhancement of an n + /p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology

Inductor-Less Low-Power Low-Voltage Cross-Coupled Regulated-Cascode Transimpedance Amplifier Circuit in CMOS Technology

Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes

A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode

Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays

Cascoded active quencher using a bipolar transistor for fast discharging of a single-photon avalanche

Highly sensitive hybrid optical receiver with a compact 1.4 GHz linear transimpedance amplifier in 55 nm CMOS

Integrated Fast-Sensing Triple-Voltage SPAD Quenching/Resetting Circuit for Increasing PDP

Monolithically Integrated SiON Photonic Circuit and Silicon Single-Photon Detectors for NIR-Range Operation

A Comparator With Reduced Delay Time in 65-nm CMOS for Supply Voltages Down to 0.65 V

Area and Power Efficient 3-8.8-GHz IR-UWB Transmitter With Spectrum Tunability

Laser Diode Current Driver With (1-t/T)^ Time Dependence in 0.35- \mu\text BiCMOS Technology for Quantum Random Number Generators

Single-pixel postprocessing-free 5 Mbps quantum random number generator using a single-photon avalanche diode detector and a T/(T − t) pulse-shaped laser driver

A 54.2-dB Current Gain Dynamic Range, 1.78-GHz Gain-Bandwidth Product CMOS VCCA2

A 54.2-dB Current Gain Dynamic Range, 1.78-GHz Gain-Bandwidth Product CMOS VCCA 2

Latch-Type Optical Receiver With Integrated pin Photodiodes

A 10 Gb/s 0.25 μm SiGe modulator driver for photonic-integration

Ultra-low power low-complexity 3–7.5 GHz IR-UWB transmitter with spectrum tunability

High Slew-Rate Quadruple-Voltage Mixed-Quenching Active-Resetting Circuit for SPADs in 0.35-μm CMOS for Increasing PDP

1.3 V supply voltage, high bandwidth, 100 nA minimum amplitude BiCMOS voltage-controlled current source

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