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Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys

Applied physics letters, 2022-01, Vol.120 (3)

2022

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Growth of Corrole Films from Solution: A Nanometer-Scale Study at the Real Solid–Liquid Interface

Journal of physical chemistry. C, 2021-06, Vol.125 (21), p.11540-11547

2021

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The effect of cyclic voltammetry speed on anion intercalation in HOPG

Surface science, 2019-03, Vol.681, p.111-115

2019

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Weibull function to describe the cumulative size distribution of clumps formed by two-dimensional grains randomly arranged on a plane

Physical review. E, 2024-04, Vol.109 (4), Article 044131

2024

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Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Surface science, 2019-05, Vol.683, p.31-37

2019

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Cu(110) Surface in Hydrochloric Acid Solution: Potential Dependent Chloride Adsorption and Surface Restructuring

Journal of physical chemistry. C, 2015-01, Vol.119 (4), p.1782-1790

2015

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Intermixing and buried interfacial structure in strained Ge/Si(105) facets

Physical review. B, Condensed matter and materials physics, 2013-11, Vol.88 (19), Article 195312

2013

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Unveiling the robustness of porphyrin crystalline nanowires toward aggressive chemicals

European physical journal plus, 2022-03, Vol.137 (3), p.300, Article 300

2022

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Site-Sensitive Gas Sensing and Analyte Discrimination in Langmuir−Blodgett Porphyrin Films

Journal of physical chemistry. C, 2011-04, Vol.115 (16), p.8189-8194

2011

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Probing Two-Dimensional vs Three-Dimensional Molecular Aggregation in Metal-Free Tetraphenylporphyrin Thin Films by Optical Anisotropy

Journal of physical chemistry. C, 2014-07, Vol.118 (29), p.15649-15655

2014

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Confinement effects in π-bonded chains at group IV semiconductor (111) surfaces

Journal of physics. Condensed matter, 2013-12, Vol.25 (48), p.485008-485008

2013

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Charge transfer between isomer domains on n+-doped Si(111)-2 × 1: energetic stabilization

Journal of physics. Condensed matter, 2012-09, Vol.24 (35), p.354009-354009

2012

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Charge transfer between isomer domains on n+-doped Si(111)-2 x 1: energetic stabilization

Journal of physics. Condensed matter, 2012-09, Vol.24 (35), p.1-13

2012

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Coexistence of negatively and positively buckled isomers on n+-doped Si(111) − 2 × 1

Physical review letters, 2011-02, Vol.106 (6), p.067601-067601, Article 067601

2011

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Optical gap between dangling-bond states of a single-domain diamond C(111)-2 x 1 by reflectance anisotropy spectroscopy

Europhysics letters, 2007-09, Vol.79 (5), p.57002 ( 5)-57002 ( 5)

2007

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Optical gap between dangling-bond states of a single-domain diamond C(111)-2 × 1 by reflectance anisotropy spectroscopy

Europhysics letters, 2007-09, Vol.79 (5), p.57002

2007

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Highly sensitive optical monitoring of molecular film growth by organic molecular beam deposition

Applied physics letters, 2003-11, Vol.83 (20), p.4146-4148

2003

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Epitaxial growth of organic heterostructures: Morphology, structure, and growth mode

Surface science, 2007-07, Vol.601 (13), p.2571-2575

2007

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Direct observation of the epitaxial growth of molecular layers on molecular single crystals

Applied physics letters, 2006-12, Vol.89 (26), p.261905-261905-3

2006

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Optical transitions and sum rules at clean semiconductor surfaces

Journal of physics. Condensed matter, 2004-10, Vol.16 (39), p.S4289-S4300

2004

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Formation of extended thermal etch pits on annealed Ge wafers

Applied surface science, 2018-12, Vol.462, p.86-94

2018

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Growth-related properties and postgrowth phenomena in organic molecular thin films

The Journal of chemical physics, 2007-12, Vol.127 (24), p.244703-244703-8

2007

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The application of reflectance anisotropy spectroscopy to organics deposition

Organic electronics, 2004-03, Vol.5 (1), p.73-81

2004

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Cobalt atoms drive the anchoring of Co-TPP molecules to the oxygen-passivated Fe(0 0 1) surface

Applied surface science, 2020-03, Vol.505, p.144213, Article 144213

2020

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Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy

Surface science, 2007-09, Vol.601 (18), p.4488-4491

2007

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Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys

Growth of Corrole Films from Solution: A Nanometer-Scale Study at the Real Solid–Liquid Interface

The effect of cyclic voltammetry speed on anion intercalation in HOPG

Weibull function to describe the cumulative size distribution of clumps formed by two-dimensional grains randomly arranged on a plane

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Cu(110) Surface in Hydrochloric Acid Solution: Potential Dependent Chloride Adsorption and Surface Restructuring

Intermixing and buried interfacial structure in strained Ge/Si(105) facets

Unveiling the robustness of porphyrin crystalline nanowires toward aggressive chemicals

Site-Sensitive Gas Sensing and Analyte Discrimination in Langmuir−Blodgett Porphyrin Films

Probing Two-Dimensional vs Three-Dimensional Molecular Aggregation in Metal-Free Tetraphenylporphyrin Thin Films by Optical Anisotropy

Confinement effects in π-bonded chains at group IV semiconductor (111) surfaces

Charge transfer between isomer domains on n+-doped Si(111)-2 × 1: energetic stabilization

Charge transfer between isomer domains on n+-doped Si(111)-2 x 1: energetic stabilization

Coexistence of negatively and positively buckled isomers on n+-doped Si(111) − 2 × 1

Optical gap between dangling-bond states of a single-domain diamond C(111)-2 x 1 by reflectance anisotropy spectroscopy

Optical gap between dangling-bond states of a single-domain diamond C(111)-2 × 1 by reflectance anisotropy spectroscopy

Highly sensitive optical monitoring of molecular film growth by organic molecular beam deposition

Epitaxial growth of organic heterostructures: Morphology, structure, and growth mode

Direct observation of the epitaxial growth of molecular layers on molecular single crystals

Optical transitions and sum rules at clean semiconductor surfaces

Formation of extended thermal etch pits on annealed Ge wafers

Growth-related properties and postgrowth phenomena in organic molecular thin films

The application of reflectance anisotropy spectroscopy to organics deposition

Cobalt atoms drive the anchoring of Co-TPP molecules to the oxygen-passivated Fe(0 0 1) surface

Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy

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