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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Semiconductor physics, quantum electronics, and optoelectronics, 2016-07, Vol.19 (2), p.129-138

Golenkov, A. G.

2016

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Sensitivity of CCD matrices with electronic multiplication

Tekhnologii͡a︡ i konstruirovanie v ėlektronnoĭ apparature, 2018-04 (2), p.9-14

2018

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CCD photomatrixes with electron multiplication

Tekhnologii͡a︡ i konstruirovanie v ėlektronnoĭ apparature, 2017-04 (1-2), p.33-38

2017

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Spectral sensitivity dependencies of backside illuminated planar MCT photodiodes

Infrared physics & technology, 2006, Vol.47 (3), p.213-219

2006

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MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Opto-electronics review, 2019-09, Vol.27 (3), p.282-290

2019

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Superconducting states of lead nanoinclusions in the stoichiometric PbTe matrix

Semiconductors (Woodbury, N.Y.), 2007-02, Vol.41 (2), p.140-144

2007

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THz linear array scanner in application to the real-time imaging and convolutional neural network recognition

Semiconductor physics, quantum electronics, and optoelectronics, 2021-03, Vol.24 (1), p.90-99

2021

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SUB-THz/THz RADIATION DETECTOR DEVICE BASED ON Si-MOSFET

Sensor Electronics and Microsystem Technologies, 2017-10, Vol.14 (3), p.38-46

2017

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Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

Semiconductor physics, quantum electronics, and optoelectronics, 2015-03, Vol.18 (1), p.40-45

Golenkov, A.

2015

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Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Semiconductor physics, quantum electronics, and optoelectronics, 2016-07, Vol.19 (2), p.149-155

Sizov, F. F.

2016

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Linear HgCdTe IR FPA 288×4 with bidirectional scanning

Opto-electronics review, 2010, Vol.18 (3), p.332-337

2010

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4×288 readouts and FPAs properties

Opto-electronics review, 2006, Vol.14 (1), p.76-83

2006

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MCT heteroepitaxial 4 × 288 FPA

Infrared physics & technology, 2004, Vol.45 (1), p.13-23

2004

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MCT heteroepitaxial 4 × 288 FPA

Infrared physics & technology, 2004, Vol.45 (1), p.13-23

2004

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IR sensor readout devices with source input circuits

Semiconductor physics, quantum electronics, and optoelectronics, 1999-03, Vol.2 (1), p.102-110

Sizov, F. F.

1999

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Calibration of infrasonic hydrophones by the reciprocity method in small water chambers

Measurement techniques, 1959-08, Vol.2 (8), p.637-642

Golenkov, A. G.

1959

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Splenectomy in hairy cell leukemia

Sovetskaia meditsina, 1985 (5), p.114

1985

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Phase I to II Multicenter Study of Oblimersen Sodium, a Bcl-2 Antisense Oligonucleotide, in Patients With Advanced Chronic Lymphocytic Leukemia

Journal of clinical oncology, 2005-10, Vol.23 (30), p.7697-7702

2005

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PUBLIC AWARENESS ABOUT INTELLECTUAL DISABILITY, ITS CAUSES AND EFFECTIVENESS OF INTERVENTIONS BY SPECIALISTS

Problemy sotsial'noi gigieny, zdravookhraneniia i istorii meditsiny, 2023-10, Vol.31 (Special Issue 2), p.1225

2023

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MODELING OF ELECTROMECHANICAL PROCESSES OF THE LINEAR PERMANENT MAGNET ACTUATOR FOR TWO MASS VIBRO-IMPACT SYSTEM

Tehnìčna elektrodinamìka, 2019-10, Vol.2019 (6), p.43-48

2019

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Properties of InSb photodiodes fabricated by ion implantation

Semiconductor physics, quantum electronics, and optoelectronics, 2024-09, Vol.27 (3), p.356-365

2024

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МОДЕЛЮВАННЯ ЕЛЕКТРОМЕХАНІЧНИХ ПРОЦЕСІВ ЛІНІЙНОΓО МАΓНІТО-ЕЛЕКТРИЧНОΓО ДВИΓУНА ПРИВОДА ДВОМАСОВОЇ ВІБРОУДАРНОЇ СИСТЕМИ

Tehnìčna elektrodinamìka, 2019-11, p.43-48

2019

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Millimeter-wave narrow-gap uncooled hot-carrier detectors for active imaging

Optical engineering, 2013-03, Vol.52 (3), p.33203

2013

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Silicon lenses with HDPE anti-reflection coatings for low THz frequency range

Semiconductor physics, quantum electronics, and optoelectronics, 2023-01, Vol.26 (1), p.59-67

2023

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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Sensitivity of CCD matrices with electronic multiplication

CCD photomatrixes with electron multiplication

Spectral sensitivity dependencies of backside illuminated planar MCT photodiodes

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Superconducting states of lead nanoinclusions in the stoichiometric PbTe matrix

THz linear array scanner in application to the real-time imaging and convolutional neural network recognition

SUB-THz/THz RADIATION DETECTOR DEVICE BASED ON Si-MOSFET

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Linear HgCdTe IR FPA 288×4 with bidirectional scanning

4×288 readouts and FPAs properties

MCT heteroepitaxial 4 × 288 FPA

MCT heteroepitaxial 4 × 288 FPA

IR sensor readout devices with source input circuits

Calibration of infrasonic hydrophones by the reciprocity method in small water chambers

Splenectomy in hairy cell leukemia

Phase I to II Multicenter Study of Oblimersen Sodium, a Bcl-2 Antisense Oligonucleotide, in Patients With Advanced Chronic Lymphocytic Leukemia

A randomized phase 3 study of tipifarnib compared with best supportive care, including hydroxyurea, in the treatment of newly diagnosed acute myeloid leukemia in patients 70 years or older

PUBLIC AWARENESS ABOUT INTELLECTUAL DISABILITY, ITS CAUSES AND EFFECTIVENESS OF INTERVENTIONS BY SPECIALISTS

MODELING OF ELECTROMECHANICAL PROCESSES OF THE LINEAR PERMANENT MAGNET ACTUATOR FOR TWO MASS VIBRO-IMPACT SYSTEM

Properties of InSb photodiodes fabricated by ion implantation

МОДЕЛЮВАННЯ ЕЛЕКТРОМЕХАНІЧНИХ ПРОЦЕСІВ ЛІНІЙНОΓО МАΓНІТО-ЕЛЕКТРИЧНОΓО ДВИΓУНА ПРИВОДА ДВОМАСОВОЇ ВІБРОУДАРНОЇ СИСТЕМИ

Millimeter-wave narrow-gap uncooled hot-carrier detectors for active imaging

Silicon lenses with HDPE anti-reflection coatings for low THz frequency range

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