UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP advances, 2021-07, Vol.11 (7), p.075013-075013-6

2021

Volltextzugriff (PDF)

Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods

New journal of physics, 2015-08, Vol.17 (8), p.83047

2015

Volltextzugriff (PDF)

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Applied physics letters, 2016-11, Vol.109 (22)

2016

Volltextzugriff (PDF)

Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells

physica status solidi (b), 2015-05, Vol.252 (5), p.873-878

2015

Volltextzugriff (PDF)

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Journal of physics. D, Applied physics, 2010-09, Vol.43 (36), p.365102-365102

2010

Volltextzugriff (PDF)

Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

Applied physics letters, 2016-05, Vol.108 (22)

2016

Volltextzugriff (PDF)

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied physics letters, 2013-09, Vol.103 (12)

2013

Volltextzugriff (PDF)

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

Journal of applied physics, 2009-10, Vol.106 (7), p.076104-076104-3

2009

Volltextzugriff (PDF)

Growth and characterization of InGaN by RF-MBE

Journal of crystal growth, 2011-05, Vol.323 (1), p.72-75

2011

Volltextzugriff (PDF)

Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

Journal of applied physics, 2011-07, Vol.110 (1), p.013520-013520-8

2011

Volltextzugriff (PDF)

Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers

Journal of applied physics, 2010-12, Vol.108 (12), p.124503-124503-8

2010

Volltextzugriff (PDF)

Universality of electron accumulation at wurtzite c - and a -plane and zinc-blende InN surfaces

Applied physics letters, 2007-08, Vol.91 (9), p.092101-092101-3

2007

Volltextzugriff (PDF)

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Journal of applied physics, 2013-01, Vol.113 (3)

2013

Volltextzugriff (PDF)

Influence of strain on the band gap energy of wurtzite InN

Physica Status Solidi (b), 2009-06, Vol.246 (6), p.1177-1180

2009

Volltextzugriff (PDF)

Model for the thickness dependence of electron concentration in InN films

Applied physics letters, 2006-10, Vol.89 (17), p.172109-172109-3

2006

Volltextzugriff (PDF)

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Journal of electronic materials, 2012-05, Vol.41 (5), p.905-909

2012

Volltextzugriff (PDF)

Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

Journal of applied physics, 2003-07, Vol.94 (1), p.307-312

2003

Volltextzugriff (PDF)

Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene)

Synthetic metals, 2003-07, Vol.138 (3), p.491-495

2003

Volltextzugriff (PDF)

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1180-1188

2015

Volltextzugriff (PDF)

Dielectric Function of Nitride Semiconductors: Recent Experimental Results

Acta physica Polonica, A, 2003-08, Vol.104 (2), p.123-147

Goldhahn, R.

2003

Volltextzugriff (PDF)

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85014

2015

Volltextzugriff (PDF)

Molecular beam epitaxy of phase pure cubic InN

Applied physics letters, 2006-12, Vol.89 (26), p.261903-261903-3

2006

Volltextzugriff (PDF)

Dielectric function and optical properties of quaternary AlInGaN alloys

Journal of applied physics, 2011-07, Vol.110 (1), p.013102-013102-9

2011

Volltextzugriff (PDF)

Dielectric function and bowing parameters of InGaN alloys

physica status solidi (b), 2012-03, Vol.249 (3), p.485-488

2012

Volltextzugriff (PDF)

Valence-band splitting and optical anisotropy of AlN

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1679-1682

2010

Volltextzugriff (PDF)

1 – 25 von 320

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(264)
Mit Volltextzugriff
(276)

Publikationsform

Sprache

Englisch
(286)
Deutsch
(20)
Russisch
(4)
Japanisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(202)
Physics
(132)
Physical Sciences
(121)
Technology
(80)
Physics, Applied
(79)
Materials Science
(76)
Humans
(69)
Life Sciences & Biomedicine
(66)
Physics, Condensed Matter
(64)
Materials Science, Multidisciplinary
(61)
Exact Sciences And Technology
(49)
Orthopedics
(44)
Female
(41)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(39)
Male
(36)
Middle Aged
(31)
Biological And Medical Sciences
(30)
Medical Sciences
(30)
Aged
(29)
Surgery
(27)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

Growth and characterization of InGaN by RF-MBE

Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers

Universality of electron accumulation at wurtzite c - and a -plane and zinc-blende InN surfaces

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Influence of strain on the band gap energy of wurtzite InN

Model for the thickness dependence of electron concentration in InN films

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene)

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

Dielectric Function of Nitride Semiconductors: Recent Experimental Results

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Molecular beam epitaxy of phase pure cubic InN

Dielectric function and optical properties of quaternary AlInGaN alloys

Dielectric function and bowing parameters of InGaN alloys

Valence-band splitting and optical anisotropy of AlN

Suchergebnisse filtern