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Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2465-2471

2024

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TCAD Calibration at Cryogenic Temperatures for CMOS Image Sensor Simulations

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-7

2022

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A new TCAD simulation method for direct CMOS electron detectors optimization

Ultramicroscopy, 2023-01, Vol.243, p.113628-113628, Article 113628

2023

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Junction Leakage Random Telegraph Signals in Arrays of MOSFETs

IEEE electron device letters, 2021-11, Vol.42 (11), p.1650-1653

2021

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Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes

Journal of electronic materials, 2023-11, Vol.52 (11), p.7103-7113

2023

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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2878-2887

2012

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Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2594-2601

2009

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Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors

IEEE electron device letters, 2011-06, Vol.32 (6), p.773-775

2011

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Dark Current Random Telegraph Signals in Short-Wavelength Infrared Image Sensors Based on InGaAs

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.770-776

2021

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Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3087-3094

2010

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Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.3085-3094

2011

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Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach

Journal of lightwave technology, 2013-04, Vol.31 (8), p.1247-1254

2013

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Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensors

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.P67.TX-1-P67.TX-6

2024

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Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.918-926

2012

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Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1284-1292

2020

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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.128-132

2021

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Investigations of the MGy dose level radiation effects on the photometric budget of a radiation-hardened CMOS-based camera

Applied optics (2004), 2019-08, Vol.58 (22), p.6165

2019

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Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2132-2141

2009

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Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

IEEE transactions on electron devices, 2015-12, Vol.62 (6), p.2965-2970

2015

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Vulnerability and Hardening Studies of Optical and Illumination Systems at MGy Dose Levels

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.132-140

2018

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Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.3076-3084

2011

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Quantum Modeling of Semiconductors Leakage Currents Induced by Defects

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.141-144

2023

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Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3494-3501

2008

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Random Telegraph Signals in Proton Irradiated CCDs and APS

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2197-2204

2008

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Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2590-2597

2013

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Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations

TCAD Calibration at Cryogenic Temperatures for CMOS Image Sensor Simulations

A new TCAD simulation method for direct CMOS electron detectors optimization

Junction Leakage Random Telegraph Signals in Arrays of MOSFETs

Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology

Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors

Dark Current Random Telegraph Signals in Short-Wavelength Infrared Image Sensors Based on InGaAs

Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements

Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors

Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach

Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensors

Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors

Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

Investigations of the MGy dose level radiation effects on the photometric budget of a radiation-hardened CMOS-based camera

Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology

Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

Vulnerability and Hardening Studies of Optical and Illumination Systems at MGy Dose Levels

Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

Quantum Modeling of Semiconductors Leakage Currents Induced by Defects

Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis

Random Telegraph Signals in Proton Irradiated CCDs and APS

Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments

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