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Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction

Scientific reports, 2018-07, Vol.8 (1), p.10190-10, Article 10190

2018

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Reference database for seismic ground-motion in Europe (RESORCE)

Bulletin of earthquake engineering, 2014-02, Vol.12 (1), p.311-339

2014

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Graphene growth by molecular beam epitaxy using a solid carbon source

Physica status solidi. A, Applications and materials science, 2010-02, Vol.207 (2), p.300-303

2010

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Graphene growth by molecular beam epitaxy on the carbon-face of SiC

Applied physics letters, 2010-12, Vol.97 (24), p.241907-241907-3

2010

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High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (7), p.075406-1-7, Article 075406

2013

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Thermal and compositional anomalies beneath the North American continent

Journal of Geophysical Research - Solid Earth, 2004-01, Vol.109 (B1), p.B01308-n/a

2004

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Letter in reply to “Akthar N, Smith MJ, McKirdy S, Page RE. Surgical delay in the management of dog bite injuries in children, does it increase the risk of infection?” J Plast Reconstr Aesthetic Surg 2006; 59(1):80–5

Journal of plastic, reconstructive & aesthetic surgery, 2007-01, Vol.60 (5), p.572-572

Godey, S

2007

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Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

Journal of applied physics, 2011-03, Vol.109 (5), p.054307-054307-6

2011

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Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux

Semiconductor science and technology, 2009-12, Vol.24 (12), p.125014-125014 (4)

2009

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Superparamagnetism-induced mesoscopic electron focusing in topological insulators

Physical review. B, 2016-08, Vol.94 (7), Article 075137

2016

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Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

Thin solid films, 2012-04, Vol.520 (13), p.4501-4505

2012

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Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure

Journal of applied physics, 2010-08, Vol.108 (4)

2010

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Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

Journal of materials chemistry, 2010-01, Vol.20 (13), p.2680-2690

2010

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Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

Nanotechnology, 2010-09, Vol.21 (38), p.385602-385602

2010

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MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

Journal of crystal growth, 2007-04, Vol.301, p.217-220

2007

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High On−Off Conductance Switching Ratio in Optically-Driven Self-Assembled Conjugated Molecular Systems

ACS nano, 2010-04, Vol.4 (4), p.2411-2421

2010

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CBr4 and be heavily doped InGaAs grown in a production MBE system

Journal of crystal growth, 2005-05, Vol.278 (1-4), p.600-603

2005

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Doped Colloidal InAs Nanocrystals in the Single Ionized Dopant Limit

Journal of physical chemistry. C, 2019-06, Vol.123 (23), p.14803-14812

2019

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Improving the Mediterranean seismicity picture thanks to international collaborations

Physics and chemistry of the earth. Parts A/B/C, 2013, Vol.63, p.3-11

2013

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Cavities and dislocations induced in silicon by MeV He implantation

Journal of applied physics, 2000-03, Vol.87 (5), p.2158-2161

2000

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As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

Journal of crystal growth, 2005-05, Vol.278 (1-4), p.564-568

2005

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Ring charging of a single silicon dangling bond imaged by noncontact atomic force microscopy

Physical review. B, 2020-12, Vol.102 (23), p.1, Article 235433

2020

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The use of Stimulan in bone and joint infections: a prospective multicentre study

Bone & joint open, 2023-07, Vol.4 (7), p.516-522

2023

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Growth mechanism of cavities in MeV helium implanted silicon

Journal of applied physics, 2002-06, Vol.91 (11), p.9027-9030

2002

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The use of Stimulan in bone and joint infections

Bone & joint open, 2023-07, Vol.4 (7), p.516-522

2023

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Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction

Reference database for seismic ground-motion in Europe (RESORCE)

Graphene growth by molecular beam epitaxy using a solid carbon source

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC

Thermal and compositional anomalies beneath the North American continent

Letter in reply to “Akthar N, Smith MJ, McKirdy S, Page RE. Surgical delay in the management of dog bite injuries in children, does it increase the risk of infection?” J Plast Reconstr Aesthetic Surg 2006; 59(1):80–5

Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux

Superparamagnetism-induced mesoscopic electron focusing in topological insulators

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

High On−Off Conductance Switching Ratio in Optically-Driven Self-Assembled Conjugated Molecular Systems

CBr4 and be heavily doped InGaAs grown in a production MBE system

Doped Colloidal InAs Nanocrystals in the Single Ionized Dopant Limit

Improving the Mediterranean seismicity picture thanks to international collaborations

Cavities and dislocations induced in silicon by MeV He implantation

As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

Ring charging of a single silicon dangling bond imaged by noncontact atomic force microscopy

The use of Stimulan in bone and joint infections: a prospective multicentre study

Growth mechanism of cavities in MeV helium implanted silicon

The use of Stimulan in bone and joint infections

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