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Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

Solid-state electronics, 2022-09, Vol.197

2022

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Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

Solid-state electronics, 2022-11, Vol.197, p.108448, Article 108448

2022

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Microstructure and electromigration in copper damascene lines

Microelectronics and reliability, 2000-01, Vol.40 (1), p.77-86

2000

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Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect

Microelectronic engineering, 2002, Vol.60 (1-2), p.119-124

2002

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X-Ray Micro-Calorimeter Based on Si Thermistors for X-Ray Astronomy: Design and First Measurements

Journal of low temperature physics, 2008-04, Vol.151 (1-2), p.381-386

2008

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TiN-CVD process optimization for integration with Cu-CVD

Microelectronic engineering, 2000, Vol.50 (1), p.369-374

2000

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Electromigration failure modes in damascene copper interconnects

Microelectronics and reliability, 1998-06, Vol.38 (6), p.1029-1034

1998

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Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816-1821

2001

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Critical thickness in epitaxial CdTe/ZnTe

Applied physics letters, 1990-01, Vol.56 (3), p.292-294

1990

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Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2008-09, Vol.594 (2), p.210-214

2008

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Adsorption of Te on GaAs(100)

Surface science, 1989-04, Vol.211, p.969-978

1989

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Cleaning after silicon oxide CMP

Microelectronic engineering, 1997-11, Vol.37, p.285-291

1997

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RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAs

Applied surface science, 1990-01, Vol.41-42, p.470-479

1990

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Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs

Applied physics letters, 1989-07, Vol.55 (3), p.235-237

1989

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Structure of (111) CdTe epilayers on misoriented (001) GaAs

Journal of applied physics, 1990-03, Vol.67 (5), p.2428-2433

1990

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Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 μm inter-metal dielectric application

Microelectronic engineering, 1997-11, Vol.37, p.261-269

1997

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6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

Growth of (111) CdTe on tilted (001) GaAs

Applied physics letters, 1989-02, Vol.54 (9), p.828-830

1989

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Room temperature electroless plating copper seed layer process for damascene interlevel metal structures

Microelectronic engineering, 2000, Vol.50 (1), p.473-479

2000

Volltextzugriff (PDF)

(111) CdTe molecular beam epitaxy growth on misoriented (001) GaAs substrate

Journal of crystal growth, 1990-04, Vol.101 (1), p.126-130

1990

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Epitaxial Growth of Ii-Vi Semiconductors on Vicinal GaAs Surfaces

MRS proceedings, 1989, Vol.148, Article 389

1989

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Full CMP integration of CVD TiN damascene sub-0.1-[mu]m metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816

2001

Volltextzugriff (PDF)

Full CMP integration of CVD TiN damascene sub-0.1-mum metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816-1821

2001

Volltextzugriff (PDF)

Full CMP integration of CVD TiN damascene sub-0.1-/spl mu/m metal gate devices for ULSI applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1816-1821

2001

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Structural properties of interfaces between II-VI and III-V semiconductors

Physica scripta, 1991-01, Vol.1991, p.268-272

1991

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Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

Microstructure and electromigration in copper damascene lines

Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect

X-Ray Micro-Calorimeter Based on Si Thermistors for X-Ray Astronomy: Design and First Measurements

TiN-CVD process optimization for integration with Cu-CVD

Electromigration failure modes in damascene copper interconnects

Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications

Critical thickness in epitaxial CdTe/ZnTe

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

Adsorption of Te on GaAs(100)

Cleaning after silicon oxide CMP

RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAs

Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs

Structure of (111) CdTe epilayers on misoriented (001) GaAs

Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 μm inter-metal dielectric application

6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

Growth of (111) CdTe on tilted (001) GaAs

Room temperature electroless plating copper seed layer process for damascene interlevel metal structures

(111) CdTe molecular beam epitaxy growth on misoriented (001) GaAs substrate

Epitaxial Growth of Ii-Vi Semiconductors on Vicinal GaAs Surfaces

Full CMP integration of CVD TiN damascene sub-0.1-[mu]m metal gate devices for ULSI applications

Full CMP integration of CVD TiN damascene sub-0.1-mum metal gate devices for ULSI applications

Full CMP integration of CVD TiN damascene sub-0.1-/spl mu/m metal gate devices for ULSI applications

Structural properties of interfaces between II-VI and III-V semiconductors

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