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High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition

Journal of crystal growth, 2005-12, Vol.285 (4), p.506-513

2005

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Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Journal of electronic materials, 2010-06, Vol.39 (6), p.777-780

2010

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The study of magnetism of Mn clusters on Si surfaces

Applied surface science, 2003-05, Vol.214 (1-4), p.103-108

2003

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Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions

Applied physics letters, 1985-05, Vol.46 (10), p.970-972

1985

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Surface Adsorption Kinetics of Ga Wire Arrays on Si(112)

MRS proceedings, 1996, Vol.448, Article 217

1996

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Modulation Spectroscopy of Layered Structures

MRS proceedings, 1989, Vol.160, Article 631

Glembocki, O.J.

1989

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Light emission properties of porous silicon

Materials Chemistry and Physics, 1993-08, Vol.35 (1), p.1-10

1993

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In-Situ Studies of the Formation of GA and AL Wires on SI(112) Facet Surfaces

MRS proceedings, 1999, Vol.570, Article 117

1999

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Optical characterization of the electrical properties of processed GaAs

Applied surface science, 1993, Vol.63 (1), p.143-152

1993

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Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase

Journal of electronic materials, 1993-12, Vol.22 (12), p.1391-1393

1993

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Nanoscale photovoltaic imaging using the scanning tunneling microscope

Ultramicroscopy, 1992, Vol.42 (A), p.764-770

1992

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Chemically Assisted Ion Beam Etching of SiGe

MRS proceedings, 1990, Vol.204, Article 369

1990

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The Effects of P2S5 Surface Passivation on Dry Etched GaAs

MRS proceedings, 1991, Vol.236

1991

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The Effects of P 2 S 5 Surface Passivation on Dry Etched GaAs

MRS proceedings, 1991, Vol.236, Article 217

1991

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Aluminum Gallium Arsenide (AlxGa1-xAs)

Handbook of Optical Constants of Solids, Five-Volume Set, 1997, p.513-558

1997

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Indium Phosphide (InP)

Handbook of Optical Constants of Solids, Five-Volume Set, 1997, p.503-516

1997

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Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells

Surface science, 1986-08, Vol.174 (1), p.206-210

1986

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Characterization of GaAs Surfaces Subjected to A Cl2/Ar High Density Plasma Etching Process

MRS proceedings, 1996, Vol.448

1996

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Characterization of GaAs Surfaces Subjected to A Cl 2 /Ar High Density Plasma Etching Process

MRS proceedings, 1996, Vol.448, Article 33

1996

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Ellipsometric study of the etch-stop mechanism in heavily doped silicon

Solid-state electronics, 1985-01, Vol.28 (1-2), p.209-209

1985

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Temperature dependence of photoreflectance line shapes in [formula omitted] multiple quantum wells

Superlattices and microstructures, 1987, Vol.3 (3), p.235-238

1987

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Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

MRS proceedings, 1990, Vol.204, Article 59

1990

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Photoreflectance Characterization of Etch-Induced Damage in Dry Etched GaAs

MRS proceedings, 1993, Vol.324, Article 153

1993

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Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

2007 International Semiconductor Device Research Symposium, 2007, p.1-2

2007

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Aluminum Gallium Arsenide (AlxGa1 −xAs)

Handbook of Optical Constants of Solids, Volume 2, 1991, p.513-558

1991

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High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

The study of magnetism of Mn clusters on Si surfaces

Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions

Surface Adsorption Kinetics of Ga Wire Arrays on Si(112)

Modulation Spectroscopy of Layered Structures

Light emission properties of porous silicon

In-Situ Studies of the Formation of GA and AL Wires on SI(112) Facet Surfaces

Optical characterization of the electrical properties of processed GaAs

Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase

Nanoscale photovoltaic imaging using the scanning tunneling microscope

Chemically Assisted Ion Beam Etching of SiGe

The Effects of P2S5 Surface Passivation on Dry Etched GaAs

The Effects of P 2 S 5 Surface Passivation on Dry Etched GaAs

Aluminum Gallium Arsenide (AlxGa1-xAs)

Indium Phosphide (InP)

Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells

Characterization of GaAs Surfaces Subjected to A Cl2/Ar High Density Plasma Etching Process

Characterization of GaAs Surfaces Subjected to A Cl 2 /Ar High Density Plasma Etching Process

Ellipsometric study of the etch-stop mechanism in heavily doped silicon

Temperature dependence of photoreflectance line shapes in [formula omitted] multiple quantum wells

Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

Photoreflectance Characterization of Etch-Induced Damage in Dry Etched GaAs

Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

Aluminum Gallium Arsenide (AlxGa1 −xAs)

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