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A model for heterogeneous growth of Si1-xGex films from hydrides

Journal of applied physics, 1991-03, Vol.69 (6), p.3729-3732

1991

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Real-time laser-light scattering studies of surface topography development during GaAs MBE growth

Journal of crystal growth, 1993-02, Vol.127 (1), p.966-971

1993

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A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems

Thin solid films, 2000-07, Vol.369 (1-2), p.375-378

2000

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Surface topography changes during the growth of GaAs by molecular beam epitaxy

Applied physics letters, 1991-12, Vol.59 (25), p.3282-3284

1991

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Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE)

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.146-150

2002

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In situ optical monitoring for SiGe epitaxy

Journal of crystal growth, 2000-02, Vol.209 (2), p.290-296

2000

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Calcium contamination of silicon epitaxy

Semiconductor science and technology, 1992-04, Vol.7 (4), p.452-459

1992

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Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.503-509

2005

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A Study of UV Absorption Spectra and Photolysis of Some Group II and Group VI Alkyls

Journal of the Electrochemical Society, 1985-01, Vol.132 (4), p.968-972

1985

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In Situ Laser Light Scattering: I . Detection of Defects Formed during Silicon Molecular Beam Epitaxy

Journal of the Electrochemical Society, 1989-10, Vol.136 (10), p.3083-3088

1989

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Si1?XGeX/Si quantum well infrared photodetectors

Journal of materials science. Materials in electronics, 1995-10, Vol.6 (5), p.363-367

1995

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Far Infrared Detectors using p-Si1-xGex/Si Multiple Quantum Wells

ESSDERC '94: 24th European Solid State Device Research Conference, 1994, p.731-734

1994

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The measurement of surface boron on silicon wafers annealed in vacuum and gas ambients

Thin solid films, 1989-12, Vol.183 (1), p.299-306

1989

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Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxy

Applied physics letters, 1989-09, Vol.55 (12), p.1229-1231

1989

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Investigation of competitive recombination processes in rare-earth activated garnet phosphors

Physical review. B, Condensed matter, 1979-01, Vol.19 (2), p.1254-1269

1979

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The Relationship Between Concentration and Efficiency in Rare Earth Activated Phosphors

Journal of the Electrochemical Society, 1979-01, Vol.126 (9), p.1556-1563

1979

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Single Crystal Y 3Al5 O 12: Tb Phosphor Produced by Ion Implantation

Journal of the Electrochemical Society, 1982-04, Vol.129 (4), p.816-820

1982

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Characterisation of Heterojunction Bipolar Transistors incorporating Si/Si1-xGex epitaxial double layers with n+ emitter implants

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, p.447-450

1992

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The Temperature Dependence of Rare‐Earth Activated Garnet Phosphors: II . A Comparative Study of Ce3+, Eu3+, Tb3+, and Gd3+ in

Journal of the Electrochemical Society, 1979-07, Vol.126 (7), p.1221-1228

1979

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The Temperature Dependence of Rare‐Earth Activated Garnet Phosphors: I . Intensity and Lifetime Measurements on Undoped and Ce‐Doped

Journal of the Electrochemical Society, 1979-07, Vol.126 (7), p.1213-1220

1979

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Electrical and Optical Properties of Si and Si1−xGex, Alloy Grown by the Ultra-High Vacuum Vapour Phase Epitaxy Method

MRS proceedings, 1991, Vol.220

1991

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In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline Si

MRS proceedings, 1987, Vol.94, Article 173

1987

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New high-energy luminescence bands from Co2+ in ZnSe

Solid state communications, 1980-10, Vol.36 (1), p.61-67

1980

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Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors

Microelectronics, 1995-03, Vol.26 (2-3), p.255-259

1995

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Si(1-x)Gex/Si quantum well infrared photodetectors

Journal of materials science. Materials in electronics, 1995-10, Vol.6 (5), p.363-367

1995

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A model for heterogeneous growth of Si1-xGex films from hydrides

Real-time laser-light scattering studies of surface topography development during GaAs MBE growth

A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems

Surface topography changes during the growth of GaAs by molecular beam epitaxy

Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE)

In situ optical monitoring for SiGe epitaxy

Calcium contamination of silicon epitaxy

Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

A Study of UV Absorption Spectra and Photolysis of Some Group II and Group VI Alkyls

In Situ Laser Light Scattering: I . Detection of Defects Formed during Silicon Molecular Beam Epitaxy

Si1?XGeX/Si quantum well infrared photodetectors

Far Infrared Detectors using p-Si1-xGex/Si Multiple Quantum Wells

The measurement of surface boron on silicon wafers annealed in vacuum and gas ambients

Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxy

Investigation of competitive recombination processes in rare-earth activated garnet phosphors

The Relationship Between Concentration and Efficiency in Rare Earth Activated Phosphors

Single Crystal Y 3Al5 O 12: Tb Phosphor Produced by Ion Implantation

Characterisation of Heterojunction Bipolar Transistors incorporating Si/Si1-xGex epitaxial double layers with n+ emitter implants

The Temperature Dependence of Rare‐Earth Activated Garnet Phosphors: II . A Comparative Study of Ce3+, Eu3+, Tb3+, and Gd3+ in

The Temperature Dependence of Rare‐Earth Activated Garnet Phosphors: I . Intensity and Lifetime Measurements on Undoped and Ce‐Doped

Electrical and Optical Properties of Si and Si1−xGex, Alloy Grown by the Ultra-High Vacuum Vapour Phase Epitaxy Method

In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline Si

New high-energy luminescence bands from Co2+ in ZnSe

Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors

Si(1-x)Gex/Si quantum well infrared photodetectors

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