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Optical and magnetic resonance studies of Be-doped GaN bulk crystals

Journal of crystal growth, 2014-10, Vol.403, p.119-123

2014

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The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs

RSC advances, 2017-01, Vol.7 (41), p.25353-25361

2017

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Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy

Journal of crystal growth, 2012-07, Vol.350 (1), p.27-32

2012

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Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates

Journal of electronic materials, 2019-04, Vol.48 (4), p.2226-2232

2019

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Anisotropies in the linear polarization of vacancy photoluminescence in diamond induced by crystal rotations and strong magnetic fields

Physical review. B, 2018-03, Vol.97 (12), Article 125426

2018

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Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC

Physical review. B, 2017-01, Vol.95 (4)

2017

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Detection of nanowatt microwave radiation by the photoluminescence of an ensemble of negatively charged nitrogen vacancies in diamond

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Stochastic inversion of electrical resistivity changes using a Markov Chain Monte Carlo approach

Journal of Geophysical Research - Solid Earth, 2005-02, Vol.110 (B2), p.B02101-n/a

2005

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Enhanced radiation tolerance in Mn-doped ferroelectric thin films

Applied physics letters, 2017-07, Vol.111 (2)

2017

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Incorporation of Mg in Free-Standing HVPE GaN Substrates

Journal of electronic materials, 2016-06, Vol.45 (6), p.2692-2696

2016

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High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition

Journal of crystal growth, 2005-12, Vol.285 (4), p.506-513

2005

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Efficient iron doping of HVPE GaN

Journal of crystal growth, 2018-10, Vol.500, p.111-116

2018

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Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.151-155

2003

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Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures

Applied physics letters, 1996-06, Vol.68 (25), p.3614-3616

1996

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Circularly polarized zero-phonon transitions of vacancies in diamond at high magnetic fields

Physical review. B, 2018-05, Vol.97 (19), Article 195448

2018

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Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

Physical review. B, Condensed matter, 2002-02, Vol.65 (8), Article 085312

2002

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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Journal of crystal growth, 2003-04, Vol.251 (1), p.481-486

2003

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Incorporation of pervasive impurities on HVPE GaN growth directions

Journal of crystal growth, 2016-12, Vol.456, p.101-107

2016

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Deep level transient capacitance measurements of GaSb self-assembled quantum dots

Journal of applied physics, 2000-11, Vol.88 (10), p.5843-5849

2000

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Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Physical review. B, 2019-02, Vol.99 (8), p.085440, Article 085440

2019

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Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Journal of crystal growth, 2010-09, Vol.312 (18), p.2558-2563

2010

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Compensation mechanism in high purity semi-insulating 4H-SiC

Journal of applied physics, 2007-03, Vol.101 (5)

2007

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Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2007-12, Vol.401, p.327-330

2007

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Magnetic resonance studies of ZnO

Physica. B, Condensed matter, 2001-12, Vol.308, p.976-979

2001

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Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates

Journal of applied physics, 2010-09, Vol.108 (5), p.054906-054906-6

2010

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Optical and magnetic resonance studies of Be-doped GaN bulk crystals

The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs

Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy

Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates

Anisotropies in the linear polarization of vacancy photoluminescence in diamond induced by crystal rotations and strong magnetic fields

Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC

Detection of nanowatt microwave radiation by the photoluminescence of an ensemble of negatively charged nitrogen vacancies in diamond

Stochastic inversion of electrical resistivity changes using a Markov Chain Monte Carlo approach

Enhanced radiation tolerance in Mn-doped ferroelectric thin films

Incorporation of Mg in Free-Standing HVPE GaN Substrates

High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition

Efficient iron doping of HVPE GaN

Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures

Circularly polarized zero-phonon transitions of vacancies in diamond at high magnetic fields

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Incorporation of pervasive impurities on HVPE GaN growth directions

Deep level transient capacitance measurements of GaSb self-assembled quantum dots

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Compensation mechanism in high purity semi-insulating 4H-SiC

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

Magnetic resonance studies of ZnO

Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates

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