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A Method of Developing Qualification Plans for Board Products

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.8A.4-1-8A.4-6

2022

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Dynamic vs Static Burn-in for 16nm Production

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-3

2020

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Graded tunnelling barrier and oxygen concentration in thermally grown ultrathin SiOx gate oxide

Journal of physics. D, Applied physics, 2007-04, Vol.40 (7), p.2143-2149

2007

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Graded tunnelling barrier and oxygen concentration in thermally grown ultrathin SiO x gate oxide

Journal of physics. D, Applied physics, 2007-04, Vol.40 (7), p.2143-2149

2007

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Opportunities brought by sequential 3D CoolCube™ integration

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, p.226-229

2016

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Improved CV/I Methodology to Accurately Predict CMOS Technology Performance

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1760-1762

2007

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Oxide reliability of drain engineered I/O NMOS from hot carrier injection

IEEE electron device letters, 2003-11, Vol.24 (11), p.686-688

2003

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Current through SiO2 gate oxide and its low frequency fluctuations: Trapping on charged dangling bonds with negative Hubbard U

Journal of applied physics, 2005-04, Vol.97 (7)

2005

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Understanding degradation and breakdown of SiO2 gate dielectric with “negative Hubbard U” dangling bonds

Journal of applied physics, 2004-03, Vol.95 (5), p.2490-2494

2004

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Mechanism and Modeling of PMOS NBTI Degradation with Drain Bias

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.264-267

2007

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Current through Si O 2 gate oxide and its low frequency fluctuations: Trapping on charged dangling bonds with negative Hubbard U

Journal of applied physics, 2005-03, Vol.97 (7), p.074104-074104-7

2005

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Cost model for monolithic 3D integrated circuits

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2016, p.1-2

2016

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Dangling bonds with “negative Hubbard U ”: Physical model for degradation of SiO2 gate dielectric under voltage stress

Journal of applied physics, 2002-12, Vol.92 (12), p.7257-7260

2002

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Low-temperature mobility measurements on CMOS devices

IEEE transactions on electron devices, 1989-08, Vol.36 (8), p.1448-1455

1989

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The effects of plasma-induced damage on transistor degradation and the relationship to field programmable gate array performance

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 2001, p.315-318

2001

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Resistance monitoring vehicle for advanced copper process technology

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004, p.37-39

2004

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