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Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

Applied physics letters, 2023-06, Vol.122 (26)

2023

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Micro-structured lateral thermal lens for increased output power and narrowed beam divergence in kilowatt-class 9xx nm diode laser bars

Applied physics letters, 2024-06, Vol.124 (24)

2024

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A 1.4 kW 780 nm pulsed diode laser, high duty cycle, passively side-cooled pump module

Optics express, 2021-03, Vol.29 (7), p.9749-9757

2021

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Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers

Applied physics letters, 2020-11, Vol.117 (20)

2020

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Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Electronics letters, 2020-09, Vol.56 (20), p.1084-1086

2020

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High-power sampled-grating-based master oscillator power amplifier system with 235 nm wavelength tuning around 970 nm

Applied optics (2004), 2018-10, Vol.57 (29), p.8680

2018

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High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings

IEEE photonics technology letters, 2010-03, Vol.22 (5), p.284-286

2010

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Low-index quantum-barrier single-pass tapered semiconductor optical amplifiers for efficient coherent beam combining

Semiconductor science and technology, 2020-06, Vol.35 (6), p.65018

2020

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Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

Semiconductor science and technology, 2013-03, Vol.28 (3), p.35009

2013

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10W continuous-wave monolithically integrated master-oscillator power-amplifier

Electronics letters, 2007-02, Vol.43 (3), p.160-162

2007

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Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm

IEEE photonics technology letters, 2008-10, Vol.20 (19), p.1627-1629

2008

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Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

Applied physics letters, 2008-12, Vol.93 (22), p.221102-221102-3

2008

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High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.901-908

2009

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3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1188-1193

2007

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Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.5187-5190, Article 5187

2008

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Transport and microscopic investigations on the electric-pulse-induced phase transition of VO2 films

Physica. C, Superconductivity, 2007-09, Vol.460-462 (1), p.549-550

2007

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650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

IEEE photonics technology letters, 2007-01, Vol.19 (2), p.118-120

2007

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10 W continuous-wave monolithically integrated master-oscillator power-amplifier

Electronics letters, 2007, Vol.43 (3), p.160

2007

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17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier

IEEE photonics technology letters, 2013-01, Vol.25 (2), p.115-118

2013

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Broad-area lasers with internal surface Bragg gratings for wavelength stabilization at 980nm

22nd IEEE International Semiconductor Laser Conference, 2010, p.148-149

2010

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Reliable 2 W DBR-Tapered Diode Lasers Lasing at 1180 nm Based on Highly Strained Quantum Wells

2018 IEEE International Semiconductor Laser Conference (ISLC), 2018, p.1-2

2018

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High-Power Distributed Feedback Lasers With Surface Gratings

IEEE photonics technology letters, 2012-08, Vol.24 (16), p.1443-1445

2012

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Joule-Class 940-nm Diode Laser Bars for Millisecond Pulse Applications

IEEE photonics technology letters, 2015-08, Vol.27 (15), p.1663-1666

2015

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Miniaturized Tunable External Cavity Diode Laser with Single-Mode Operation and a Narrow Linewidth at 633 nm

IEEE photonics technology letters, 2011-11, Vol.23 (22), p.1676-1678

2011

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1180nm DBR-ridge waveguide lasers with strain compensation layers in the active region for lifetime improvement

2016 International Semiconductor Laser Conference (ISLC), 2016, p.1-2

2016

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Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

Micro-structured lateral thermal lens for increased output power and narrowed beam divergence in kilowatt-class 9xx nm diode laser bars

A 1.4 kW 780 nm pulsed diode laser, high duty cycle, passively side-cooled pump module

Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers

Vertical GaN MISFET for chip-on-chip high speed laser driving applications

High-power sampled-grating-based master oscillator power amplifier system with 235 nm wavelength tuning around 970 nm

High-Power 980-nm Broad-Area Lasers Spectrally Stabilized by Surface Bragg Gratings

Low-index quantum-barrier single-pass tapered semiconductor optical amplifiers for efficient coherent beam combining

Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

10W continuous-wave monolithically integrated master-oscillator power-amplifier

Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm

Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE

Transport and microscopic investigations on the electric-pulse-induced phase transition of VO2 films

650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW

10 W continuous-wave monolithically integrated master-oscillator power-amplifier

17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier

Broad-area lasers with internal surface Bragg gratings for wavelength stabilization at 980nm

Reliable 2 W DBR-Tapered Diode Lasers Lasing at 1180 nm Based on Highly Strained Quantum Wells

High-Power Distributed Feedback Lasers With Surface Gratings

Joule-Class 940-nm Diode Laser Bars for Millisecond Pulse Applications

Miniaturized Tunable External Cavity Diode Laser with Single-Mode Operation and a Narrow Linewidth at 633 nm

1180nm DBR-ridge waveguide lasers with strain compensation layers in the active region for lifetime improvement

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