UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Microelectronic engineering, 2013-09, Vol.109, p.75-78

2013

Volltextzugriff (PDF)

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.971-977

2004

Volltextzugriff (PDF)

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

Volltextzugriff (PDF)

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

IEEE electron device letters, 2009-03, Vol.30 (3), p.216-218

2009

Volltextzugriff (PDF)

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.978-984

2004

Volltextzugriff (PDF)

Conductive filament structure in HfO2 resistive switching memory devices

Solid-state electronics, 2015-09, Vol.111, p.161-165

2015

Volltextzugriff (PDF)

High Dielectric Constant Materials: VLSI MOSFET Applications

1. Aufl., 2005

Volltextzugriff (PDF)

Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- k Dielectrics

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.898-904

2010

Volltextzugriff (PDF)

Dielectric Morphology and RRAM Resistive Switching Characteristics

MRS proceedings, 2014, Vol.1691 (1), p.1-12, Article mrss14-1691-bb03-03

2014

Volltextzugriff (PDF)

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

Microelectronic engineering, 2007-09, Vol.84 (9), p.2196-2200

2007

Volltextzugriff (PDF)

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

2009 Symposium on VLSI Technology, 2009, p.34-35

2009

Volltextzugriff (PDF)

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- [Formula Omitted]/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

Volltextzugriff (PDF)

Compatibility of silicon gates with hafnium-based gate dielectrics

Microelectronic engineering, 2003-09, Vol.69 (2), p.138-144

2003

Volltextzugriff (PDF)

Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

2008 Symposium on VLSI Technology, 2008, p.82-83

2008

Volltextzugriff (PDF)

LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks

2006 European Solid-State Device Research Conference, 2006, p.351-354

2006

Volltextzugriff (PDF)

9 - Metal oxide resistive random access memory (RRAM) technology

Advances in Non-volatile Memory and Storage Technology, 2014, p.288-340

2014

Volltextzugriff (PDF)

Modeling the effects of different forming conditions on RRAM conductive filament stability

2013 5th IEEE International Memory Workshop, 2013, p.52-55

2013

Volltextzugriff (PDF)

Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric

MRS proceedings, 2002, Vol.716

2002

Volltextzugriff (PDF)

High-k Crystalline Gate Dielectrics: A Research Perspective

High Dielectric Constant Materials, 2005, p.607-637

2005

Volltextzugriff (PDF)

MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

IEEE transactions on electron devices, 1997-01, Vol.44 (1), p.104-109

1997

Volltextzugriff (PDF)

Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO 2 Gate Dielectric

MRS proceedings, 2002, Vol.716, Article B2.5

2002

Volltextzugriff (PDF)

Optimal Scaling Methodologies and Transistor Performance

High Dielectric Constant Materials, 2005, p.143-194

2005

Volltextzugriff (PDF)

Materials Issues for High-k Gate Dielectric Selection and Integration

High Dielectric Constant Materials, 2005, p.253-286

2005

Volltextzugriff (PDF)

Electrical Measurement Issues for Alternative Gate Stack Systems

High Dielectric Constant Materials, 2005, p.521-566

2005

Volltextzugriff (PDF)

SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

High Dielectric Constant Materials, 2005, p.45-90

2005

Volltextzugriff (PDF)

1 – 25 von 70

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(15)
Mit Volltextzugriff
(63)

Publikationsform

Sprache

Englisch
(70)

Erscheinungsjahr

n.n

Thema

Science & Technology
(22)
Engineering
(20)
Engineering, Electrical & Electronic
(19)
Technology
(19)
Hafnium Oxide
(17)
High-K Gate Dielectrics
(14)
High K Dielectric Materials
(13)
Physics
(13)
Physical Sciences
(12)
Annealing
(11)
Gate Dielectric
(11)
Physics, Applied
(11)
Mosfets
(9)
Silicon
(9)
Aluminum Oxide
(7)
Dielectrics
(7)
Equivalent Oxide Thickness
(7)
Threshold Voltage
(7)
Electronics
(6)
Exact Sciences And Technology
(6)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

Conductive filament structure in HfO2 resistive switching memory devices

High Dielectric Constant Materials: VLSI MOSFET Applications

Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- k Dielectrics

Dielectric Morphology and RRAM Resistive Switching Characteristics

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- [Formula Omitted]/Metal Gate Stacks Directly on SiGe

Compatibility of silicon gates with hafnium-based gate dielectrics

Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks

9 - Metal oxide resistive random access memory (RRAM) technology

Modeling the effects of different forming conditions on RRAM conductive filament stability

Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric

High-k Crystalline Gate Dielectrics: A Research Perspective

MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO 2 Gate Dielectric

Optimal Scaling Methodologies and Transistor Performance

Materials Issues for High-k Gate Dielectric Selection and Integration

Electrical Measurement Issues for Alternative Gate Stack Systems

SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

Suchergebnisse filtern