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Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Advanced materials (Weinheim), 2013-03, Vol.25 (10), p.1474-1478

2013

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Metal oxide resistive memory switching mechanism based on conductive filament properties

Journal of applied physics, 2011-12, Vol.110 (12), p.124518-124518-12

2011

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NRAM: a disruptive carbon-nanotube resistance-change memory

Nanotechnology, 2018-04, Vol.29 (13), p.134003-134003

2018

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Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

IEEE electron device letters, 2009-03, Vol.30 (3), p.216-218

2009

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Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Microelectronic engineering, 2013-09, Vol.109, p.75-78

2013

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Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

Microelectronic engineering, 2007-09, Vol.84 (9), p.2196-2200

2007

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Titanium dioxide (TiO 2 )-based gate insulators

IBM journal of research and development, 1999-05, Vol.43 (3), p.383-392

1999

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Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

Chemical vapor deposition, 2006-03, Vol.12 (2-3), p.158-164

2006

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Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates

Applied physics letters, 1996-12, Vol.69 (25), p.3860-3862

1996

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Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

Applied physics letters, 2009-07, Vol.95 (2)

2009

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Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-4

2020

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Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.978-984

2004

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Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.70-77

2013

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Compatibility of silicon gates with hafnium-based gate dielectrics

Microelectronic engineering, 2003-09, Vol.69 (2), p.138-144

2003

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Conductive filament structure in HfO2 resistive switching memory devices

Solid-state electronics, 2015-09, Vol.111, p.161-165

2015

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Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

2010 International Electron Devices Meeting, 2010, p.19.6.1-19.6.4

2010

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Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics

Journal of applied physics, 1999-03, Vol.85 (6), p.3278-3281

1999

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Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.MY.2.1-MY.2.5

2013

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High Dielectric Constant Materials: VLSI MOSFET Applications

1. Aufl., 2005

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Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

Applied physics letters, 2002-08, Vol.81 (7), p.1288-1290

2002

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Connecting the physical and electrical properties of Hafnia-based RRAM

2013 IEEE International Electron Devices Meeting, 2013-12, p.22.2.1-22.2.4

2013

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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Fermi-level pinning at the polysilicon/metal oxide interface-Part I

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.971-977

2004

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Charge trapping and degradation in high-permittivity TiO2 dielectric films

IEEE electron device letters, 1997-10, Vol.18 (10), p.465-467

1997

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Random telegraph noise (RTN) in scaled RRAM devices

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.MY.10.1-MY.10.4

2013

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Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Metal oxide resistive memory switching mechanism based on conductive filament properties

NRAM: a disruptive carbon-nanotube resistance-change memory

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

Titanium dioxide (TiO 2 )-based gate insulators

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates

Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

Compatibility of silicon gates with hafnium-based gate dielectrics

Conductive filament structure in HfO2 resistive switching memory devices

Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

Determination of effects of deposition and anneal properties for tetranitratotitanium deposited TiO2 dielectrics

Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

High Dielectric Constant Materials: VLSI MOSFET Applications

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

Connecting the physical and electrical properties of Hafnia-based RRAM

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

Charge trapping and degradation in high-permittivity TiO2 dielectric films

Random telegraph noise (RTN) in scaled RRAM devices

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