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Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

Journal of applied physics, 2013-09, Vol.114 (9)

2013

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High-Power Tunnel-Injection 1060-nm InGaAs-(Al)GaAs Quantum-Dot Lasers

IEEE photonics technology letters, 2009-07, Vol.21 (14), p.999-1001

2009

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Nonlinear pulse propagation in a quantum dot laser

Optics express, 2013-03, Vol.21 (5), p.5715-5736

2013

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Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

Applied physics letters, 2010-01, Vol.96 (1), p.011901-011901-3

2010

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1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

Journal of physics. D, Applied physics, 2011-04, Vol.44 (14), p.145104

2011

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GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability

Semiconductor science and technology, 2008-08, Vol.23 (8), p.085022

2008

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Ab initio description of the first stages of laser-induced ultra-fast nonthermal melting of InSb

Applied physics. B, Lasers and optics, 2008-12, Vol.93 (4), p.743-747

2008

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High gain 1.55 μm diode lasers based on InAs quantum dot like active regions

Applied physics letters, 2011-05, Vol.98 (20)

2011

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Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

Applied physics letters, 2010-05, Vol.96 (19)

2010

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High power 1100-nm InGaAs/GaAs quantum dot lasers

CAS 2010 Proceedings (International Semiconductor Conference), 2010, Vol.1, p.173-176

2010

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High-Speed Low-Noise InAs/InAlGaAs/InP 1.55- \mu Quantum-Dot Lasers

IEEE photonics technology letters, 2012-05, Vol.24 (10), p.809-811

2012

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Influence of the As 2 / As 4 growth modes on the formation of quantumdot-like InAs islands grown on InAlGaAs/InP (100)

Applied physics letters, 2010-05, Vol.96 (19), p.191903-191903-3

2010

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High gain 1.55 μ m diode lasers based on InAs quantum dot likeactive regions

Applied physics letters, 2011-05, Vol.98 (20), p.201102-201102-3

2011

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15-W Fiber-Coupled Quantum-Dot Pump Module

IEEE photonics technology letters, 2012-06, Vol.24 (12), p.1030-1032

2012

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High-Power Tunnel-Injection 1060-nm InGaAsa(Al)GaAs Quantum-Dot Lasers

IEEE photonics technology letters, 2009-01, Vol.21 (14)

2009

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1.55 μm high-speed quantum dot lasers for telecommunication applications

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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Digital modulation at 20 GBit/s of an InAs/InGaAlAs/InP quantum dot laser operating in the telecom wavelength range

ISLC 2012 International Semiconductor Laser Conference, 2012, p.1-2

2012

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Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system

Physical review. B, Condensed matter and materials physics, 2012-03, Vol.85 (12), Article 125311

2012

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Tunneling-injection high-power 1060-nm quantum dot laser with improved temperature stability

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

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Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs guantum dot-guantum well system

Physical review. B, Condensed matter and materials physics, 2012-03, Vol.85 (12)

2012

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High power, low threshold 1060-nm InGaAs/AlGaAs quantum dot lasers

2008 IEEE 21st International Semiconductor Laser Conference, 2008, p.105-106

2008

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Advanced quantum dot based devices

CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009, p.1-1

2009

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Relation between small and large signal modulation capabilities in highly nonlinear quantum dot lasers for optical telecommunication

IEEE Photonics Conference 2012, 2012, p.48-49

2012

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High-gain InP-based quantum dot lasers for telecommunication applications

IEEE Photonic Society 24th Annual Meeting, 2011, p.167-168

2011

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Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

High-Power Tunnel-Injection 1060-nm InGaAs-(Al)GaAs Quantum-Dot Lasers

Nonlinear pulse propagation in a quantum dot laser

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications

GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability

Ab initio description of the first stages of laser-induced ultra-fast nonthermal melting of InSb

High gain 1.55 μm diode lasers based on InAs quantum dot like active regions

Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

High power 1100-nm InGaAs/GaAs quantum dot lasers

High-Speed Low-Noise InAs/InAlGaAs/InP 1.55- \mu Quantum-Dot Lasers

Influence of the As 2 / As 4 growth modes on the formation of quantumdot-like InAs islands grown on InAlGaAs/InP (100)

High gain 1.55 μ m diode lasers based on InAs quantum dot likeactive regions

15-W Fiber-Coupled Quantum-Dot Pump Module

High-Power Tunnel-Injection 1060-nm InGaAsa(Al)GaAs Quantum-Dot Lasers

1.55 μm high-speed quantum dot lasers for telecommunication applications

Digital modulation at 20 GBit/s of an InAs/InGaAlAs/InP quantum dot laser operating in the telecom wavelength range

Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system

Tunneling-injection high-power 1060-nm quantum dot laser with improved temperature stability

Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs guantum dot-guantum well system

High power, low threshold 1060-nm InGaAs/AlGaAs quantum dot lasers

Advanced quantum dot based devices

Relation between small and large signal modulation capabilities in highly nonlinear quantum dot lasers for optical telecommunication

High-gain InP-based quantum dot lasers for telecommunication applications

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