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Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies

Journal of crystal growth, 2001, Vol.222 (3), p.482-496

2001

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Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy

Journal of crystal growth, 2003-10, Vol.258 (1), p.14-25

2003

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Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen

Journal of crystal growth, 2001, Vol.222 (3), p.538-548

2001

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Some applications of elastic peak electron spectroscopy for semiconductor surface studies

Surface and interface analysis, 1998-11, Vol.26 (12), p.903-907

1998

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Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

Journal of applied physics, 2002-04, Vol.91 (8), p.5045-5050

2002

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Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers

Journal of physics. Condensed matter, 2004-01, Vol.16 (2), p.S99-S106

2004

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Optical Characterization of GaAs/Si Layers Grown by the Conformal Method (Confined Lateral Epitaxial Growth)

Journal of materials research, 2002-06, Vol.17 (6), p.1341-1349

2002

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Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

Applied physics letters, 2001-08, Vol.79 (9), p.1270-1272

2001

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HVPE-based orientation-patterned GaAs: added-value for non-linear applications

MRS proceedings, 2003, Vol.799, Article Z2.2

2003

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Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

Optical materials, 2001-06, Vol.17 (1), p.315-318

2001

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High-quality GaAs-related lateral junctions on Si by conformal growth

Optical materials, 2001-06, Vol.17 (1), p.267-270

2001

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Temperature influence on the growth of gallium nitride by HVPE in a mixed H 2/N 2 carrier gas

Journal of crystal growth, 2004-01, Vol.260 (1), p.7-12

2004

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Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

Journal of crystal growth, 2000-03, Vol.210 (1), p.198-202

2000

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Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

Journal of crystal growth, 2000-12, Vol.221 (1), p.225-230

2000

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Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.70-74

2002

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Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

Journal of crystal growth, 2004-01, Vol.260 (1-2), p.7-12

2004

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Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces

Journal of crystal growth, 2003-10, Vol.258 (1), p.1-13

2003

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Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy

Journal of crystal growth, 1998-09, Vol.192 (3), p.402-409

1998

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Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.197-201

2001

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Kinetic expression and study of the growth rate of mismatched (Ga,In)/As/InP structures grown by hydride vapour phase epitaxy

Journal of crystal growth, 1995-05, Vol.151 (1-2), p.80-90

1995

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Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE

Applied surface science, 1999-04, Vol.142 (1-4), p.637-641

1999

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Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates

Superlattices and microstructures, 2009-04, Vol.45 (4), p.214-221

2009

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Fabrication de cristaux photoniques par croissance cristalline anisotrope par la méthode aux hydrures

Journal de Physique IV (Proceedings), 2006-10, Vol.135 (1), p.265-266

2006

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Stress distribution mapping of GaAs on Si conformal layers

Journal of applied physics, 2007-03, Vol.101 (5), p.054901-054901-5

2007

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High quality InP on Si by conformal growth

Applied physics letters, 1996-05, Vol.68 (19), p.2654-2656

1996

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Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies

Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy

Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen

Some applications of elastic peak electron spectroscopy for semiconductor surface studies

Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers

Optical Characterization of GaAs/Si Layers Grown by the Conformal Method (Confined Lateral Epitaxial Growth)

Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

HVPE-based orientation-patterned GaAs: added-value for non-linear applications

Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

High-quality GaAs-related lateral junctions on Si by conformal growth

Temperature influence on the growth of gallium nitride by HVPE in a mixed H 2/N 2 carrier gas

Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces

Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy

Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

Kinetic expression and study of the growth rate of mismatched (Ga,In)/As/InP structures grown by hydride vapour phase epitaxy

Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE

Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates

Fabrication de cristaux photoniques par croissance cristalline anisotrope par la méthode aux hydrures

Stress distribution mapping of GaAs on Si conformal layers

High quality InP on Si by conformal growth

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