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Separation of Lateral Migration Components by Hole During the Short-Term Retention Operation in 3-D NAND Flash Memories

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2645-2647

2020

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Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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On the RF Series Resistance Extraction of Nanoscale MOSFETs

IEEE microwave and wireless components letters, 2008-10, Vol.18 (10), p.689-691

2008

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Analysis of Contact Effects in Inverted-Staggered Organic Thin-Film Transistors Based on Anisotropic Conduction

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.986-994

2010

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Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

IEEE electron device letters, 2008-07, Vol.29 (7), p.775-777

2008

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Etching characteristics and mechanisms of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas

Japanese Journal of Applied Physics, 2014-10, Vol.53 (11)

2014

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Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND Flash Memories

2019 Symposium on VLSI Technology, 2019, p.T214-T215

2019

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RTS noise reduction of 1Y-nm floating gate NAND flash memory using process optimization

2015 IEEE International Reliability Physics Symposium, 2015, p.MY.8.1-MY.8.4

2015

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The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs

IEEE electron device letters, 2010-10, Vol.31 (10), p.1104-1106

2010

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Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl[sub 2]∕X (X=Ar, He, N[sub 2]) Inductively Coupled Plasmas

Journal of the Electrochemical Society, 2008, Vol.155 (12), p.D777

2008

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RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

IEEE electron device letters, 2008-03, Vol.29 (3), p.238-241

2008

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New analog predistorer using mixing operation for independent control of IM3 components

Microwave and optical technology letters, 2007-10, Vol.49 (10), p.2552-2555

2007

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Plasma Parameters and Active Species Kinetics in an Inductively Coupled HBr Plasma

Journal of the Korean Physical Society, 2008, 52(1), , pp.48-55

2008

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RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature

2009 IEEE International Reliability Physics Symposium, 2009, p.992-995

2009

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A New Physical 1/f Noise Model for Double-Stack High-k Gate-Dielectric MOSFETs

IEEE electron device letters, 2009-12, Vol.30 (12), p.1365-1367

2009

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Dual Field Communication Scheme for UHF (860-960 MHz) Gen2 RFID Chip

Integrated ferroelectrics, 2011-01, Vol.125 (1), p.1-10

2011

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Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor

2009 IEEE International Reliability Physics Symposium, 2009, p.917-920

2009

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A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Microelectronic engineering, 2011-12, Vol.88 (12), p.3411-3414

2011

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Effect of a mouthwash containing cetylpyridinium chloride and zinc acetate

Journal of Korean Academy of Oral Health, 2023-06, Vol.47 (2), p.51-57

2023

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BIDIRECTIONAL FLOATING-BASE BJT ESD PROTECTED RFID CHIP

Integrated ferroelectrics, 2010-06, Vol.112 (1), p.42-52

2010

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FLOATING-BASE BJT TYPE ESD DEVICE FOR RFID CHIP

Integrated ferroelectrics, 2009-01, Vol.105 (1), p.45-52

2009

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A Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAM

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2008, 8(1), , pp.98-103

2008

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CRYPTO BASED EPC C1G2 UHF (860 MHz-960 MHz) PASSIVE RFID TAG CHIP

Integrated ferroelectrics, 2008-01, Vol.100 (1), p.216-227

2008

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Characterization of Gate-All-Around Si-NWFET, including Rsd, cylindrical coordinate based 1/f noise and hot carrier effects

2010 IEEE International Reliability Physics Symposium, 2010, p.94-98

2010

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Core Circuit Technologies for PN-Diode-Cell PRAM

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2008, 8(2), 30, pp.128-133

2008

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Separation of Lateral Migration Components by Hole During the Short-Term Retention Operation in 3-D NAND Flash Memories

Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories

On the RF Series Resistance Extraction of Nanoscale MOSFETs

Analysis of Contact Effects in Inverted-Staggered Organic Thin-Film Transistors Based on Anisotropic Conduction

Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

Etching characteristics and mechanisms of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas

Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND Flash Memories

RTS noise reduction of 1Y-nm floating gate NAND flash memory using process optimization

The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs

Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl[sub 2]∕X (X=Ar, He, N[sub 2]) Inductively Coupled Plasmas

RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

New analog predistorer using mixing operation for independent control of IM3 components

Plasma Parameters and Active Species Kinetics in an Inductively Coupled HBr Plasma

RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature

A New Physical 1/f Noise Model for Double-Stack High-k Gate-Dielectric MOSFETs

Dual Field Communication Scheme for UHF (860-960 MHz) Gen2 RFID Chip

Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Effect of a mouthwash containing cetylpyridinium chloride and zinc acetate

BIDIRECTIONAL FLOATING-BASE BJT ESD PROTECTED RFID CHIP

FLOATING-BASE BJT TYPE ESD DEVICE FOR RFID CHIP

A Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAM

CRYPTO BASED EPC C1G2 UHF (860 MHz-960 MHz) PASSIVE RFID TAG CHIP

Characterization of Gate-All-Around Si-NWFET, including Rsd, cylindrical coordinate based 1/f noise and hot carrier effects

Core Circuit Technologies for PN-Diode-Cell PRAM

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