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Electromigration in Cu(Al) and Cu(Mn) damascene lines

Journal of applied physics, 2012-05, Vol.111 (9), p.093722-093722-6

2012

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Evaluations and Considerations for Self-Assembled Monolayer Field-Effect Transistors

Nano letters, 2003-02, Vol.3 (2), p.119-124

2003

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Electromigration Cu mass flow in Cu interconnections

Thin solid films, 2006-05, Vol.504 (1), p.274-278

2006

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Effect of liner thickness on electromigration lifetime

Journal of applied physics, 2003-06, Vol.93 (12), p.9576-9582

2003

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Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P7-1-P7-4

2022

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High Energy BSE/SE/STEM Imaging of 8 um Thick Semiconductor Interconnects

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.8-9

2014

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Electromigration Reliability of Advanced Interconnects

Stress-Induced Phenomona in Metallization (AIP Conference Proceedings Volume 945), 2007, Vol.945, p.27-41

2007

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Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope

Scanning, 2006-01, Vol.28 (1), p.27-31

2006

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Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.222-228

2004

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Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

2010 Symposium on VLSI Technology, 2010, p.21-22

2010

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Imaging and analysis of subsurface Cu interconnects by detecting backscattered electrons in the scanning electron microscope

Journal of applied physics, 2005-06, Vol.97 (11), p.114506-114506-9

2005

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Correlation of electromigration lifetime distribution to failure mode in dual Damascene Cu/SiLK interconnects

Microelectronic engineering, 2003-11, Vol.70 (2), p.398-405

2003

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Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices

Nanotechnology, 2013-06, Vol.24 (22), p.225304-225304

2013

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Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching

Thin solid films, 2001-06, Vol.388 (1), p.303-314

2001

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Atom motion of Cu and Co in Cu damascene lines with a CoWP cap

Applied physics letters, 2004-06, Vol.84 (24), p.4986-4988

2004

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Effect of metal liner on electromigration in Cu Damascene lines

Journal of applied physics, 2005-12, Vol.98 (12), p.124501-124501-8

2005

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A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications

2023 IEEE International Memory Workshop (IMW), 2023, p.1-4

2023

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Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines

Applied physics letters, 1998-01, Vol.72 (3), p.326-328

1998

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The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines

Journal of applied physics, 2000-11, Vol.88 (9), p.5093-5099

2000

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Porous SiO2 films analyzed by transmission electron microscopy

Thin solid films, 1995-06, Vol.261 (1-2), p.59-63

1995

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Gate-all-around silicon nanowire MOSFETs and circuits

68th Device Research Conference, 2010, p.269-272

2010

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Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications

2019 Symposium on VLSI Technology, 2019, p.T60-T61

2019

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Precision, Double XTEM Sample Preparation of Site Specific Si Nanowires

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.330-331

2009

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Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter

68th Device Research Conference, 2010, p.277-278

2010

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Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, p.327-329

2022

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Electromigration in Cu(Al) and Cu(Mn) damascene lines

Evaluations and Considerations for Self-Assembled Monolayer Field-Effect Transistors

Electromigration Cu mass flow in Cu interconnections

Effect of liner thickness on electromigration lifetime

Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme

High Energy BSE/SE/STEM Imaging of 8 um Thick Semiconductor Interconnects

Electromigration Reliability of Advanced Interconnects

Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope

Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

Imaging and analysis of subsurface Cu interconnects by detecting backscattered electrons in the scanning electron microscope

Correlation of electromigration lifetime distribution to failure mode in dual Damascene Cu/SiLK interconnects

Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices

Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching

Atom motion of Cu and Co in Cu damascene lines with a CoWP cap

Effect of metal liner on electromigration in Cu Damascene lines

A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications

Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines

The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines

Porous SiO2 films analyzed by transmission electron microscopy

Gate-all-around silicon nanowire MOSFETs and circuits

Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications

Precision, Double XTEM Sample Preparation of Site Specific Si Nanowires

Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter

Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project

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