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Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum

Applied physics letters, 2015-03, Vol.106 (13)

2015

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Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Journal of applied physics, 2021-06, Vol.129 (23)

2021

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SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Physical review. B, Condensed matter and materials physics, 2012-12, Vol.86 (23), Article 235422

2012

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Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

Applied physics letters, 2021-08, Vol.119 (9)

2021

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Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

IEEE electron device letters, 2024-10, Vol.45 (10), p.1724-1727

2024

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Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Applied physics letters, 2023-08, Vol.123 (7)

2023

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Recent advances on dielectrics technology for SiC and GaN power devices

Applied surface science, 2014-05, Vol.301, p.9-18

2014

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Nanoscale transport properties at silicon carbide interfaces

Journal of physics. D, Applied physics, 2010-06, Vol.43 (22), p.223001

2010

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Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy

Nano letters, 2009-01, Vol.9 (1), p.23-29

2009

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Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of applied physics, 2022-12, Vol.132 (24)

2022

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Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Carbon (New York), 2020-11, Vol.169, p.172-181

2020

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Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters, 2011-08, Vol.99 (7), p.072117-072117-3

2011

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Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Journal of physics. D, Applied physics, 2021-11, Vol.54 (44), p.445107

2021

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Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Journal of physics. D, Applied physics, 2011-06, Vol.44 (25), p.255302

2011

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Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere

Carbon (New York), 2018-02, Vol.127, p.270-279

2018

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From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Applied physics letters, 2014-08, Vol.105 (6)

2014

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Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

Applied physics letters, 2010-09, Vol.97 (13), p.132101

2010

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Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology, 2020-03, Vol.31 (12), p.125203-125203

2020

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Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

Nanotechnology, 2019-07, Vol.30 (28), p.284003-284003

2019

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Graphene p‑Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere

Journal of physical chemistry. C, 2015-10, Vol.119 (39), p.22718-22723

2015

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Microscopic mechanisms of graphene electrolytic delamination from metal substrates

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Semiconductor science and technology, 2014-07, Vol.29 (7), p.75018

2014

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Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Nanotechnology, 2021-01, Vol.32 (1), p.015705-015705

2021

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Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum

Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Recent advances on dielectrics technology for SiC and GaN power devices

Nanoscale transport properties at silicon carbide interfaces

Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

Graphene p‑Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

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