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Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Optics express, 2014-01, Vol.22 (1), p.399-410

2014

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Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Journal of applied physics, 2013-01, Vol.113 (1)

2013

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Tensile-strained germanium microdisks

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

Journal of applied physics, 2013-08, Vol.114 (8)

2013

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Control of tensile strain in germanium waveguides through silicon nitride layers

Applied physics letters, 2012-05, Vol.100 (20), p.201104-201104-4

2012

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Tensile-strained germanium microdisks with circular Bragg reflectors

Applied physics letters, 2016-02, Vol.108 (9)

2016

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Enhanced Tensile Strain in P-doped Ge Films Grown by Molecular Beam Epitaxy Using GaP and Sb Solid Sources

Journal of electronic materials, 2019-07, Vol.48 (7), p.4674-4678

2019

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The efficiency of carbon adsorption as a diffusion barrier in Ge/Si heterostructures

Physica scripta, 2019-08, Vol.94 (8), p.85803

2019

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Tensile-strained germanium microdisk electroluminescence

Optics express, 2015-03, Vol.23 (5), p.6722-6730

2015

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Porosity: Process, Technologies and Applications

Hcine Ghrib, Taher

2018

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Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Thin solid films, 2014-04, Vol.557, p.70-75

2014

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Light emission from strained germanium

Nature photonics, 2013-03, Vol.7 (3), p.162-162

2013

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Schottky electroluminescent diodes with n-doped germanium

Applied physics letters, 2014-06, Vol.104 (24)

2014

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New Tribological Ways

2011

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Phosboucraa desalination plant for the phosphate industry — optimization of process unit and RO performance

Desalination and water treatment, 2010-06, Vol.18 (1-3), p.151-156

2010

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Sulodexide in Patients with Chronic Venous Disease of the Lower Limbs: Clinical Efficacy and Impact on Quality of Life

Advances in therapy, 2016-09, Vol.33 (9), p.1536-1549

2016

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Recent advances in germanium emission [Invited]

Photonics research (Washington, DC), 2013-10, Vol.1 (3), p.102

2013

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Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

Journal of applied physics, 2013-05, Vol.113 (18)

2013

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Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices

Advances in natural sciences. Nanoscience and nanotechnology, 2015-03, Vol.6 (1), p.15013-5

2015

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Direct band gap germanium in high Q-factor cavities

2016 IEEE 13th International Conference on Group IV Photonics (GFP), 2016, p.38-39

2016

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Pronounced enhancement of the photoluminescence intensity in tensile-strained and heavily n-doped (4×1019 at.cm−3) Ge/Si epilayers

11th International Conference on Group IV Photonics (GFP), 2014, p.225-226

2014

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Electroluminescent diodes in n-doped germanium with Schottky contacts

11th International Conference on Group IV Photonics (GFP), 2014, p.53-54

2014

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CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, p.133-134

2014

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Tensile-strained germanium microdisks using Si3N4 stressors

10th International Conference on Group IV Photonics, 2013, p.95-96

2013

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Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Tensile-strained germanium microdisks

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

Control of tensile strain in germanium waveguides through silicon nitride layers

Tensile-strained germanium microdisks with circular Bragg reflectors

Enhanced Tensile Strain in P-doped Ge Films Grown by Molecular Beam Epitaxy Using GaP and Sb Solid Sources

The efficiency of carbon adsorption as a diffusion barrier in Ge/Si heterostructures

Tensile-strained germanium microdisk electroluminescence

Porosity: Process, Technologies and Applications

Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Light emission from strained germanium

Schottky electroluminescent diodes with n-doped germanium

New Tribological Ways

Phosboucraa desalination plant for the phosphate industry — optimization of process unit and RO performance

Sulodexide in Patients with Chronic Venous Disease of the Lower Limbs: Clinical Efficacy and Impact on Quality of Life

Recent advances in germanium emission [Invited]

Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices

Direct band gap germanium in high Q-factor cavities

Pronounced enhancement of the photoluminescence intensity in tensile-strained and heavily n-doped (4×1019 at.cm−3) Ge/Si epilayers

Electroluminescent diodes in n-doped germanium with Schottky contacts

CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser

Tensile-strained germanium microdisks using Si3N4 stressors

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