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Minimal Path Violation Problem with Application to Fault Tolerant Motion Planning of Manipulators

2023 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS), 2023, p.8673-8679

2023

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IEEE_Xplore

Fast approximate convex decomposition using relative concavity

Computer aided design, 2013-02, Vol.45 (2), p.494-504

2013

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Geometric Approximations and Their Application to Motion Planning

Ghosh, Mukulika

2019

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ProQuest

α-Decomposition of polygons

Computers & graphics, 2012-08, Vol.36 (5), p.466-476

2012

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of polygons

Computers & graphics, 2012-08, Vol.36 (5), p.466-476

2012

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Motion planning using hierarchical aggregation of workspace obstacles

2016 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS), 2016, p.5716-5721

2016

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IEEE_Xplore

Fast Collision Detection for Motion Planning Using Shape Primitive Skeletons

Algorithmic Foundations of Robotics XIII, p.36-51

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Polyaniline–single walled carbon nanotube composite – a photocatalyst to degrade rose bengal and methyl orange dyes under visible-light illumination

RSC advances, 2017, Vol.7 (58), p.36403-36415

2017

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Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Applied physics letters, 2014-08, Vol.105 (7)

2014

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OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1333-1339

2018

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IEEE_Xplore

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

AIP advances, 2015-04, Vol.5 (4), p.047136-047136-11

2015

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Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-09, Vol.35 (5)

2017

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An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

Solid-state electronics, 2014-06, Vol.96, p.1-8

2014

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Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-07, Vol.33 (4)

2015

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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Electronic Materials Letters, 2016, 12(2), , pp.232-236

2016

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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Electronic materials letters, 2016-03, Vol.12 (2), p.232-236

2016

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Polyaniline-single walled carbon nanotube composite - a photocatalyst to degrade rose bengal and methyl orange dyes under visible-light illuminationElectronic supplementary information (ESI) available. See DOI: 10.1039/c7ra03855k

2017-07

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Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device

Microelectronics and reliability, 2015-04, Vol.55 (5), p.789-794

2015

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Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al 2 O 3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy

MRS proceedings, 2015, Vol.1754, p.129-134

2015

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Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al2O3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy

MRS proceedings, 2015, Vol.1754 (1), p.129-134

2015

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Fowler-Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

Technical review - IETE, 2016-01, Vol.33 (1), p.7-10

2016

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Enhancement of two dimensional electron gas concentrations due to Si{sub 3}N{sub 4} passivation on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure: strain and interface capacitance analysis

AIP advances, 2015-04, Vol.5 (4)

2015

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Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure

2016-03

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Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

Physics of Semiconductor Devices, p.269-272

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Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Proceedings of the 2014 IEEE Students' Technology Symposium, 2014, p.393-395

2014

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Minimal Path Violation Problem with Application to Fault Tolerant Motion Planning of Manipulators

Fast approximate convex decomposition using relative concavity

Geometric Approximations and Their Application to Motion Planning

α-Decomposition of polygons

of polygons

Motion planning using hierarchical aggregation of workspace obstacles

Fast Collision Detection for Motion Planning Using Shape Primitive Skeletons

Polyaniline–single walled carbon nanotube composite – a photocatalyst to degrade rose bengal and methyl orange dyes under visible-light illumination

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy

Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Polyaniline-single walled carbon nanotube composite - a photocatalyst to degrade rose bengal and methyl orange dyes under visible-light illuminationElectronic supplementary information (ESI) available. See DOI: 10.1039/c7ra03855k

Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device

Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al 2 O 3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy

Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al2O3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy

Fowler-Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

Enhancement of two dimensional electron gas concentrations due to Si{sub 3}N{sub 4} passivation on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure: strain and interface capacitance analysis

Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure

Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

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