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Charge-related phenomena and reliability of non-volatile memories

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1876-1882

Ghidini, G.

2012

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Absorption and diffusion of a 645 nm diode laser beam in the bone. An ex vivo study

Journal of biological regulators and homeostatic agents, 2019-11, Vol.33 (6 Suppl. 2), p.137-141. DENTAL SUPPLEMENT

2019

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Correlation between temperature rise and auto-fluorescence: ex vivo study with Er:YAG laser, Quantum Molecular Resonance scalpel and Nd:YAG laser on hard and soft tissues

Journal of biological regulators and homeostatic agents, 2021-03, Vol.35 (2 Suppl. 1), p.357-364

2021

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Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices

IEEE electron device letters, 2007-12, Vol.28 (12), p.1114-1116

2007

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Bariatric Surgery to Target Obesity in the Renal Transplant Population: Preliminary Experience in a Single Center

Transplantation proceedings, 2017-05, Vol.49 (4), p.646-649

2017

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Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2155-2159

2009

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Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.1964-1970

2009

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Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates

Thin solid films, 2017-08, Vol.636, p.78-84

2017

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ToF-SIMS nitrogen profiles in oxynitride thin films: correlation with XPS bonding configurations

Surface and interface analysis, 2013-01, Vol.45 (1), p.398-401

2013

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A model of the stress induced leakage current in gate oxides

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.285-288

2001

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Oxide-Nitride-Oxide Capacitor Reliability Under Heavy-Ion Irradiation

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.1898-1905

2007

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A Technique to Extract High- k IPD Stack-Layer Thicknesses From C- V Measurements

IEEE electron device letters, 2009-06, Vol.30 (6), p.653-655

2009

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Ionizing radiation induced leakage current on ultra-thin gate oxides

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1818-1825

1997

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Heavy Ion Irradiation Effects on Capacitors With } and ONO as Dielectrics

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2218-2224

2009

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Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

Microelectronics and reliability, 2009-09, Vol.49 (9-11), p.1188-1191

2009

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A model of radiation induced leakage current (RILC) in ultra-thin gate oxides

IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1553-1561

1999

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On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs

IEEE electron device letters, 2000-01, Vol.21 (1), p.34-36

2000

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Accelerated wear-out of ultra-thin gate oxides after irradiation

IEEE transactions on nuclear science, 2003-06, Vol.50 (3), p.729-734

2003

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Drain current decrease in MOSFETs after heavy ion irradiation

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3150-3157

2004

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Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2093-2100

2001

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Rare earth-based high- k materials for non-volatile memory applications

Microelectronic engineering, 2010-03, Vol.87 (3), p.290-293

2010

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High-K dielectrics for inter-poly application in non volatile memories

Microelectronics and reliability, 2007-04, Vol.47 (4), p.598-601

2007

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BE-TANOS: Feasibility and technology limitations

Microelectronic engineering, 2011-07, Vol.88 (7), p.1182-1185

2011

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Cycling degradation in TANOS stack

Microelectronic engineering, 2009-07, Vol.86 (7), p.1822-1825

2009

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Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1669-1672

2006

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Charge-related phenomena and reliability of non-volatile memories

Absorption and diffusion of a 645 nm diode laser beam in the bone. An ex vivo study

Correlation between temperature rise and auto-fluorescence: ex vivo study with Er:YAG laser, Quantum Molecular Resonance scalpel and Nd:YAG laser on hard and soft tissues

Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices

Bariatric Surgery to Target Obesity in the Renal Transplant Population: Preliminary Experience in a Single Center

Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions

Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates

ToF-SIMS nitrogen profiles in oxynitride thin films: correlation with XPS bonding configurations

A model of the stress induced leakage current in gate oxides

Oxide-Nitride-Oxide Capacitor Reliability Under Heavy-Ion Irradiation

A Technique to Extract High- k IPD Stack-Layer Thicknesses From C- V Measurements

Ionizing radiation induced leakage current on ultra-thin gate oxides

Heavy Ion Irradiation Effects on Capacitors With } and ONO as Dielectrics

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

A model of radiation induced leakage current (RILC) in ultra-thin gate oxides

On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs

Accelerated wear-out of ultra-thin gate oxides after irradiation

Drain current decrease in MOSFETs after heavy ion irradiation

Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides

Rare earth-based high- k materials for non-volatile memory applications

High-K dielectrics for inter-poly application in non volatile memories

BE-TANOS: Feasibility and technology limitations

Cycling degradation in TANOS stack

Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress

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