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Quantitative mapping of high modulus materials at the nanoscale: comparative study between atomic force microscopy and nanoindentation

Journal of microscopy (Oxford), 2020-10, Vol.280 (1), p.51-62

2020

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Failure of a brittle layer on a ductile substrate: Nanoindentation experiments and FEM simulations

Journal of the mechanics and physics of solids, 2022-06, Vol.163, p.104859, Article 104859

2022

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Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates

Solid-state electronics, 2021-12, Vol.186, p.108070, Article 108070

2021

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Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1623-1632

2021

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On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1365-1373

2020

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Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

Applied surface science, 2007-05, Vol.253 (14), p.6006-6012

2007

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New Approach for the Prediction of CCD Dark Current Distribution in a Space Radiation Environment

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3626-3632

2008

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Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties

Materials science in semiconductor processing, 2015-02, Vol.30, p.352-360

2015

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Development of a multifunctional nanoindenter integrated in-situ Scanning Electron Microscope - application to the monitoring of piezoresponse and electro-mechanical failures

Thin solid films, 2021-10, Vol.735, p.138891, Article 138891

2021

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Selective Oxidation during AFM Electrical Characterization of Doped SiC Layers

Materials science forum, 2023-05, Vol.1089, p.63-69

2023

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Study of the beneficial effects of sodium doping Cu2ZnSnS4 material

Optical materials, 2022-10, Vol.132, p.112709, Article 112709

2022

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Proton damage effects on GaAs/GaAlAs vertical cavity surface emitting lasers

Journal of applied physics, 2003-12, Vol.94 (12), p.7757-7763

2003

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Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2830-2835

2002

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Hardening of a radiation sensor based on optically stimulated luminescence

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2358-2362

2003

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On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Analysis of the proton-induced permanent degradation in an optocoupler

IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1421-1425

2002

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High-energy particle irradiation of optically stimulated luminescent films at CERN

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2056-2060

2001

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High Dielectric Constant Sub - Nanometric Laminates of Binary Oxides for the Application in High-Density Capacitances

2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, p.1-4

2020

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Identification of stable irradiation-induced-defects using low frequency noise spectroscopy

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2018, p.1-4

2018

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Analysis of the proton induced permanent degradation in an optocoupler

RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605), 2001, p.161-165

2001

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In-situ measurement of dielectric material properties: Perspectives for integrated digitally calibrated built-in-self-sensor solutions

2013 European Microwave Conference, 2013, p.76-79

2013

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17 MeV to 200 MeV protons Irradiation to characterize CCD's sensitivity to Single Event Transient

2005 8th European Conference on Radiation and Its Effects on Components and Systems, 2005, p.PA2-1-PA2-3

2005

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Quantitative mapping of high modulus materials at the nanoscale: comparative study between atomic force microscopy and nanoindentation

Failure of a brittle layer on a ductile substrate: Nanoindentation experiments and FEM simulations

Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

New Approach for the Prediction of CCD Dark Current Distribution in a Space Radiation Environment

Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties

Development of a multifunctional nanoindenter integrated in-situ Scanning Electron Microscope - application to the monitoring of piezoresponse and electro-mechanical failures

Selective Oxidation during AFM Electrical Characterization of Doped SiC Layers

Study of the beneficial effects of sodium doping Cu2ZnSnS4 material

Proton damage effects on GaAs/GaAlAs vertical cavity surface emitting lasers

Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage

Hardening of a radiation sensor based on optically stimulated luminescence

On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Analysis of the proton-induced permanent degradation in an optocoupler

High-energy particle irradiation of optically stimulated luminescent films at CERN

High Dielectric Constant Sub - Nanometric Laminates of Binary Oxides for the Application in High-Density Capacitances

Identification of stable irradiation-induced-defects using low frequency noise spectroscopy

Analysis of the proton induced permanent degradation in an optocoupler

In-situ measurement of dielectric material properties: Perspectives for integrated digitally calibrated built-in-self-sensor solutions

17 MeV to 200 MeV protons Irradiation to characterize CCD's sensitivity to Single Event Transient

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