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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Materials, 2020-09, Vol.13 (19), p.4271

2020

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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

IEEE electron device letters, 2010-08, Vol.31 (8), p.851-853

2010

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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Micromachines (Basel), 2020-01, Vol.11 (1), p.101

2020

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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3333-3339

2010

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Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1045-S1048

2009

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Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors

Sensors and actuators. B, Chemical, 2011-12, Vol.160 (1), p.1078-1081

2011

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Solid phase epitaxy of amorphous Ge films deposited by PECVD

Journal of crystal growth, 2011-09, Vol.331 (1), p.40-43

2011

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Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S996-S998

2009

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High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S988-S991

2009

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Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics

Microelectronics and reliability, 2016-11, Vol.66, p.16-21

2016

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

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Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

Japanese Journal of Applied Physics, 2006-03, Vol.45 (3L), p.L224

2006

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GaN-on-Si HEMT stress under high electric field condition

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1024-S1028

2009

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Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7)

2020

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Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs

IEEE transactions on microwave theory and techniques, 2006-10, Vol.54 (10), p.3616-3622

2006

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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting

Journal of electronic materials, 2015, Vol.44 (1), p.202-209

2015

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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.310-312

2020

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Gallium nitride MEMS resonators: how residual stress impacts design and performances

Microsystem technologies : sensors, actuators, systems integration, 2018, Vol.24 (1), p.371-377

2018

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Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2696-2702

2006

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AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

Japanese Journal of Applied Physics, 2008-03, Vol.47 (3R), p.1553

2008

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A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

2010 IEEE Energy Conversion Congress and Exposition, 2010, p.3296-3302

2010

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Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection

IEEE electron device letters, 2009-12, Vol.30 (12), p.1308-1310

2009

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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors

Solid phase epitaxy of amorphous Ge films deposited by PECVD

Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

GaN-on-Si HEMT stress under high electric field condition

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures

Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection

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