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Electric instability in multibarrier heterostructures: Features of the RF impedance

Journal of communications technology & electronics, 2012-04, Vol.57 (4), p.441-444

2012

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Dynamic analysis of the nature of nonlinearity of the lighting characteristics of the active pixels of a CMOS image detector

Journal of communications technology & electronics, 2010-12, Vol.55 (12), p.1411-1415

2010

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CMOS Color-area matrix imagers: State of the art and prospects

Journal of communications technology & electronics, 2011-03, Vol.56 (3), p.351-356

2011

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Analysis of the dynamics of the local microbreakdown in silicon avalanche photodiode structures

Journal of communications technology & electronics, 2009-03, Vol.54 (3), p.355-359

2009

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Quasi-hydrodynamic simulation of the conductivity of heavily doped nanosize layered heterostructures in high electric fields

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4), p.440-442

2006

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Statistics of multiphoton scintillations measured with a multielement array of silicon avalanche photodiodes

Journal of communications technology & electronics, 2009-04, Vol.54 (4), p.484-486

2009

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A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

Semiconductors (Woodbury, N.Y.), 2007-06, Vol.41 (6), p.718-722

2007

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Statistical features of the avalanche multiplication build-up in semiconductors with different coefficients of impact ionization

Journal of communications technology & electronics, 2009-11, Vol.54 (11), p.1331-1336

2009

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Quasi-hydrodynamic simulation of the features of electrical conduction in nanosized multilayer heavily doped heterostructures

Journal of communications technology & electronics, 2007-07, Vol.52 (7), p.803-808

2007

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Profiling the boron distribution in asymmetric n +-p silicon photodiodes and a new concept for creating selectively sensitive photocells for megapixel color-image receivers

Journal of communications technology & electronics, 2006-12, Vol.51 (12), p.1425-1430

2006

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Effect of an Si3N4/PSG/SiO2 multilayer dielectric coating on the spectral sensitivity of elements in CMOS area imagers

Journal of communications technology & electronics, 2006-12, Vol.51 (12), p.1431-1436

2006

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Electrical instability against thermal injection in multibarrier heterostructures: Theoretical model and experimental data

Technical physics, 2015-07, Vol.60 (7), p.1027-1030

2015

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A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (10), p.1204

Gergel’, V. A.

2005

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Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (9), p.1040

Gergel’, V. A.

2005

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Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation

Russian microelectronics, 2005-05, Vol.34 (3), p.155-159

2005

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A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (4), p.429

Gergel’, V. A.

2005

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Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel

Semiconductors (Woodbury, N.Y.), 2004-01, Vol.38 (2), p.232

Gergel’, V. A.

2004

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Ultraquasi-hydrodynamic electron transport in submicrometer field effect MIS transistors and heterotransistors

Semiconductors (Woodbury, N.Y.), 2000-02, Vol.34 (2), p.233-236

2000

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A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures

Semiconductors (Woodbury, N.Y.), 2007-03, Vol.41 (3), p.314-319

2007

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Enhancement of operation speed in field-effect transistors using channel profiling

Doklady. a journal of the Russian Academy of Sciences. Physics, 2000-12, Vol.45 (12), p.647-648

2000

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Simulation of a significant increase in the transconductance of MOS transistors due to sectioning of the channel

Doklady. a journal of the Russian Academy of Sciences. Physics, 2003-06, Vol.48 (6), p.261-263

2003

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Special features of electron drift in submicrometer GaAs structures

Semiconductors (Woodbury, N.Y.), 2002-04, Vol.36 (4), p.472-475

2002

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Modeling the effect of the transconductance increase in GaAs field-effect transistors

Doklady. a journal of the Russian Academy of Sciences. Physics, 2002-10, Vol.47 (10), p.715-716

2002

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Quantum-mechanical features of the field effect in heterotransistors with modulation-and δ-doped regions

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (2), p.228-232

2000

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Structural features of the avalanche multiplication in field-effect heterotransistors

Doklady. a journal of the Russian Academy of Sciences. Physics, 2001-02, Vol.46 (2), p.85-87

2001

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Electric instability in multibarrier heterostructures: Features of the RF impedance

Dynamic analysis of the nature of nonlinearity of the lighting characteristics of the active pixels of a CMOS image detector

CMOS Color-area matrix imagers: State of the art and prospects

Analysis of the dynamics of the local microbreakdown in silicon avalanche photodiode structures

Quasi-hydrodynamic simulation of the conductivity of heavily doped nanosize layered heterostructures in high electric fields

Statistics of multiphoton scintillations measured with a multielement array of silicon avalanche photodiodes

A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

Statistical features of the avalanche multiplication build-up in semiconductors with different coefficients of impact ionization

Quasi-hydrodynamic simulation of the features of electrical conduction in nanosized multilayer heavily doped heterostructures

Profiling the boron distribution in asymmetric n +-p silicon photodiodes and a new concept for creating selectively sensitive photocells for megapixel color-image receivers

Effect of an Si3N4/PSG/SiO2 multilayer dielectric coating on the spectral sensitivity of elements in CMOS area imagers

Electrical instability against thermal injection in multibarrier heterostructures: Theoretical model and experimental data

A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory

Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures

Adjusting the Spectral Response of Silicon Photodiodes by Additional Dopant Implantation

A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields

Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel

Ultraquasi-hydrodynamic electron transport in submicrometer field effect MIS transistors and heterotransistors

A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures

Enhancement of operation speed in field-effect transistors using channel profiling

Simulation of a significant increase in the transconductance of MOS transistors due to sectioning of the channel

Special features of electron drift in submicrometer GaAs structures

Modeling the effect of the transconductance increase in GaAs field-effect transistors

Quantum-mechanical features of the field effect in heterotransistors with modulation-and δ-doped regions

Structural features of the avalanche multiplication in field-effect heterotransistors

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