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Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting

Journal of physics. Condensed matter, 2023-02, Vol.35 (5), p.55302

2023

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Evolution of point defects in pulsed-laser-melted Ge1-x Sn x probed by positron annihilation lifetime spectroscopy

Journal of physics. Condensed matter, 2024-02, Vol.36 (8)

2024

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Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Nanotechnology, 2018-11, Vol.29 (47), p.474001-474001

2018

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Supercritical drying process for high aspect-ratio HSQ nano-structures

Microelectronic engineering, 2006-04, Vol.83 (4), p.1124-1127

2006

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Highly selective etch process for silicon-on-insulator nano-devices

Microelectronic engineering, 2005-03, Vol.78 (SI), p.212-217

2005

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Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing

2020 Device Research Conference (DRC), 2020, p.1-2

2020

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Structural changes in Ge1− x Sn x and Si1− x − y Ge y Sn x thin films on SOI substrates treated by pulse laser annealing

Journal of applied physics, 2024-08, Vol.136 (5)

2024

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Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates

Solid-state electronics, 2004-05, Vol.48 (5), p.739-745

2004

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Si1− x − y Ge y Sn x alloy formation by Sn ion implantation and flash lamp annealing

Journal of applied physics, 2024-08, Vol.136 (6)

2024

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Evolution of point defects in pulsed-laser-melted Ge 1-x Sn x probed by positron annihilation lifetime spectroscopy

Journal of physics. Condensed matter, 2024-02, Vol.36 (8), p.85701

2024

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Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Journal of applied physics, 2024-08, Vol.136 (6)

2024

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Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing

Journal of applied physics, 2024-08, Vol.136 (5)

2024

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Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist

Vacuum, 2005-01, Vol.77 (2), p.117-123

2005

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Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-09, Vol.21 (5), p.2018-2025

2003

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Formation of n- and p-type regions in individual Si/SiO 2 core/shell nanowires by ion beam doping

Nanotechnology, 2018-11, Vol.29 (47), p.474001

2018

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Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application

2024 Device Research Conference (DRC), 2024, p.1-2

2024

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Evolution of point defects in pulsed-laser-melted Ge 1- x Sn x probed by positron annihilation lifetime spectroscopy

Journal of physics. Condensed matter, 2023-11, Vol.36 (8)

2023

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Evolution of point defects in pulsed-laser-melted Ge1-xSnxprobed by positron annihilation lifetime spectroscopy

Journal of physics. Condensed matter, 2023-11, Vol.36 (8)

2023

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Doping top-down e-beam fabricated germanium nanowires using molecular monolayers

Materials science in semiconductor processing, 2017-05, Vol.62, p.196-200

2017

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A wired-AND transistor: Polarity controllable FET with multiple inputs

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

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Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-11, Vol.21 (6), p.2975-2979

2003

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Megasonic-assisted development of nanostructures: Investigations on high aspect ratio nanoholes

Applied physics letters, 2004-11, Vol.85 (21), p.5055-5057

2004

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Impact of supercritical CO(2) drying on roughness of hydrogen silsesquioxane e-beam resist

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.570

2006

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Laser Spectroscopy of Neutron-Rich Tin Isotopes: A Discontinuity in Charge Radii across the N=82 Shell Closure

Physical review letters, 2019-05, Vol.122 (19), p.192502-192502, Article 192502

2019

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Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting

Evolution of point defects in pulsed-laser-melted Ge1-x Sn x probed by positron annihilation lifetime spectroscopy

Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Supercritical drying process for high aspect-ratio HSQ nano-structures

Highly selective etch process for silicon-on-insulator nano-devices

Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing

Structural changes in Ge1− x Sn x and Si1− x − y Ge y Sn x thin films on SOI substrates treated by pulse laser annealing

Electrical characterization of 12 nm EJ-MOSFETs on SOI substrates

Si1− x − y Ge y Sn x alloy formation by Sn ion implantation and flash lamp annealing

Evolution of point defects in pulsed-laser-melted Ge 1-x Sn x probed by positron annihilation lifetime spectroscopy

Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing

Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist

Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

Formation of n- and p-type regions in individual Si/SiO 2 core/shell nanowires by ion beam doping

Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application

Evolution of point defects in pulsed-laser-melted Ge 1- x Sn x probed by positron annihilation lifetime spectroscopy

Evolution of point defects in pulsed-laser-melted Ge1-xSnxprobed by positron annihilation lifetime spectroscopy

Doping top-down e-beam fabricated germanium nanowires using molecular monolayers

A wired-AND transistor: Polarity controllable FET with multiple inputs

Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates

Megasonic-assisted development of nanostructures: Investigations on high aspect ratio nanoholes

Impact of supercritical CO(2) drying on roughness of hydrogen silsesquioxane e-beam resist

Laser Spectroscopy of Neutron-Rich Tin Isotopes: A Discontinuity in Charge Radii across the N=82 Shell Closure

A Phase 3 Trial of Luspatercept in Patients with Transfusion-Dependent β-Thalassemia

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