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Electrothermal Large-Signal Model of III-V FETs Including Frequency Dispersion and Charge Conservation

IEEE transactions on microwave theory and techniques, 2009-12, Vol.57 (12), p.3106-3117

2009

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Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sensors (Basel, Switzerland), 2019-11, Vol.19 (23), p.5107

2019

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Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Band alignment between GaN and ZrO2 formed by atomic layer deposition

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity

IEEE electron device letters, 2018-07, Vol.39 (7), p.947-950

2018

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Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved } and } Linearity

IEEE electron device letters, 2017-05, Vol.38 (5), p.619-622

2017

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Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors

Chemistry of materials, 2016-11, Vol.28 (22), p.8305-8313

2016

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First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding

Physica status solidi. A, Applications and materials science, 2024-05

2024

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GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

IEEE microwave and wireless components letters, 2021-02, Vol.31 (2), p.141-144

2021

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Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Conversion between EIT and Fano spectra in a microring-Bragg grating coupled-resonator system

Applied physics letters, 2017-08, Vol.111 (8)

2017

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High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

Applied physics letters, 2019-06, Vol.114 (22)

2019

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Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-10, Vol.296, p.116665, Article 116665

2023

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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.314-323

2014

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Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Micromachines (Basel), 2020-05, Vol.11 (5), p.519

2020

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A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1478-1485

2016

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InAlN/GaN HEMTs on Si With High }} of 250 GHz

IEEE electron device letters, 2018-01, Vol.39 (1), p.75-78

2018

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Design of Coupled Three-Line Impedance Transformers

IEEE microwave and wireless components letters, 2014-02, Vol.24 (2), p.84-86

2014

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Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Japanese Journal of Applied Physics, 2012-11, Vol.51 (11), p.111001-111001-4

2012

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Mid-Infrared Sensor Based on a Suspended Microracetrack Resonator With Lateral Subwavelength-Grating Metamaterial Cladding

IEEE photonics journal, 2018-04, Vol.10 (2), p.1-8

2018

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Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates

IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1485-1491

2010

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High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD

IEEE electron device letters, 2010-02, Vol.31 (2), p.96-98

2010

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Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform

IEEE photonics journal, 2018-06, Vol.10 (3), p.1-8

2018

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Electrothermal Large-Signal Model of III-V FETs Including Frequency Dispersion and Charge Conservation

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

Band alignment between GaN and ZrO2 formed by atomic layer deposition

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity

Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved } and } Linearity

Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond

Conversion between EIT and Fano spectra in a microring-Bragg grating coupled-resonator system

High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser

Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

InAlN/GaN HEMTs on Si With High }} of 250 GHz

Design of Coupled Three-Line Impedance Transformers

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Mid-Infrared Sensor Based on a Suspended Microracetrack Resonator With Lateral Subwavelength-Grating Metamaterial Cladding

Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD

Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform

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