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Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy

Nanotechnology, 2021-04, Vol.32 (15), p.155602-155602

2021

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Density-controlled growth of vertical InP nanowires on Si(111) substrates

Nanotechnology, 2020-08, Vol.31 (35), p.354003-354003

2020

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Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

Solar energy materials and solar cells, 2019-06, Vol.195, p.204-212

2019

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Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements

Materials science in semiconductor processing, 2014-10, Vol.26, p.431-437

2014

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Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon

Nanotechnology, 2019-02, Vol.30 (8), p.84005-084005

2019

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Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Nanotechnology, 2013-01, Vol.24 (3), p.035704-1-10

2013

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Structure and morphology of Ge nanowires on Si (001): Importance of the Ge islands on the growth direction and twin formation

Journal of applied physics, 2015-02, Vol.117 (5)

2015

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GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy

Nano letters, 2016-04, Vol.16 (4), p.2393-2399

2016

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Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer

Applied physics letters, 2012-02, Vol.100 (6), p.063111-063111-3

2012

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Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram

Nanoscale advances, 2020-05, Vol.2 (5), p.2127-2134

2020

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Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Nanotechnology, 2011-10, Vol.22 (40), p.405702-1-6

2011

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Control of the compensating defects in Al-doped and Ga-doped ZnO nanocrystals for MIR plasmonics

RSC advances, 2017, Vol.7 (46), p.28677-28683

2017

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GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

Nanoscale, 2016-01, Vol.8 (34), p.15637-15644

2016

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InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

Journal of crystal growth, 2012-04, Vol.344 (1), p.45-50

2012

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Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Applied physics letters, 2012-01, Vol.100 (1), p.011906-011906-4

2012

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Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

Journal of luminescence, 2014-01, Vol.145, p.595-599

2014

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Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

Journal of applied physics, 2002-07, Vol.92 (1), p.506-510

2002

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Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

Journal of applied physics, 2006-12, Vol.100 (12)

2006

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Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

Applied physics letters, 2013-06, Vol.102 (24)

2013

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From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)

Journal of applied physics, 2004-05, Vol.95 (9), p.4761-4766

2004

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Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

Applied physics letters, 1998-11, Vol.73 (20), p.2932-2934

1998

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Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

Journal of crystal growth, 2012-05, Vol.347 (1), p.49-52

2012

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Hetero-epitaxy of SrTiO3 on si and control of the interface

Thin solid films, 2007-06, Vol.515 (16), p.6332-6336

2007

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Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon

Journal of crystal growth, 2012-03, Vol.343 (1), p.101-104

2012

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Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

Journal of nanoscience and nanotechnology, 2011-10, Vol.11 (10), p.9251-9255

2011

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Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy

Density-controlled growth of vertical InP nanowires on Si(111) substrates

Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements

Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon

Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Structure and morphology of Ge nanowires on Si (001): Importance of the Ge islands on the growth direction and twin formation

GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy

Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer

Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram

Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Control of the compensating defects in Al-doped and Ga-doped ZnO nanocrystals for MIR plasmonics

GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)

Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

Hetero-epitaxy of SrTiO3 on si and control of the interface

Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon

Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

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