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GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Optics express, 2012-12, Vol.20 (25), p.27297-27303

2012

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Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Thin solid films, 2012-02, Vol.520 (8), p.3211-3215

2012

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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Applied physics letters, 2011-10, Vol.99 (15), p.152103-152103-3

2011

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Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films

Journal of applied physics, 2015-03, Vol.117 (9)

2015

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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Thin solid films, 2015-09, Vol.590, p.163-169

2015

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In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Thin solid films, 2012-02, Vol.520 (8), p.3206-3210

2012

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Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

ECS journal of solid state science and technology, 2013-01, Vol.2 (4), p.P134-P137

2013

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Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Solid-state electronics, 2015-08, Vol.110, p.65-70

2015

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On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1−x)Sn(x) unraveled with atom probe tomography

Journal of applied physics, 2015-07, Vol.118 (2)

2015

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Band alignment at interfaces of amorphous Al{sub 2}O{sub 3} with Ge{sub 1−x}Sn{sub x}- and strained Ge-based channels

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films

Journal of applied physics, 2015-03, Vol.117 (9)

2015

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Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers Using DLTs

ECS transactions, 2013, Vol.53 (1), p.251-258

2013

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Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

ECS transactions, 2013, Vol.50 (9), p.875-883

2013

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(Invited) Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors

ECS transactions, 2014-08, Vol.64 (11), p.241-253

2014

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Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers

ECS transactions, 2013, Vol.50 (5), p.279-287

2013

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Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

ECS transactions, 2011, Vol.41 (7), p.239-248

2011

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GeSn channel nMOSFETs: Material potential and technological outlook

2012 Symposium on VLSI Technology (VLSIT), 2012, p.95-96

2012

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(Invited) GeSn Technology: Impact of Sn on Ge CMOS Applications

ECS transactions, 2011, Vol.41 (7), p.231-238

2011

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Study of electrically active defects in epitaxial layers on silicon

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-3

2016

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Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method

2012 International Electron Devices Meeting, 2012, p.16.2.1-16.2.4

2012

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New fee schedule, post 9-11 efforts top agenda

Air medical journal, 2002-07, Vol.21 (4), p.8-9

Gencarelli, David F.

2002

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Ge 1-x Sn x Materials: Challenges and Applications

ECS journal of solid state science and technology, 2013, Vol.2 (1), p.N35-N40

2013

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Challenges for introducing Ge and III/V devices into CMOS technologies

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.5D.1.1-5D.1.10

2012

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Archetypal criticism

Communication education, 1990-10, Vol.39 (4), p.257-274

1990

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GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1−x)Sn(x) unraveled with atom probe tomography

Band alignment at interfaces of amorphous Al{sub 2}O{sub 3} with Ge{sub 1−x}Sn{sub x}- and strained Ge-based channels

Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge{sub 1−x}Sn{sub x} films

Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers Using DLTs

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

(Invited) Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors

Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers

Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

GeSn channel nMOSFETs: Material potential and technological outlook

(Invited) GeSn Technology: Impact of Sn on Ge CMOS Applications

Study of electrically active defects in epitaxial layers on silicon

Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method

New fee schedule, post 9-11 efforts top agenda

Ge 1-x Sn x Materials: Challenges and Applications

Challenges for introducing Ge and III/V devices into CMOS technologies

Archetypal criticism

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