UB Paderborn / Katalog / Suche / in CDI

Realization of high detectivity mid-infrared photodiodes based on highly mismatched AlInSb on GaAs substrates

Journal of applied physics, 2021-02, Vol.129 (5)

2021

Volltextzugriff (PDF)

Fabrication of highly lattice mismatched AlInSb diodes on GaAs substrates for thermophotovoltaic cells

Journal of physics. D, Applied physics, 2022-04, Vol.55 (17), p.175102

2022

Volltextzugriff (PDF)

Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates

Journal of applied physics, 2019-10, Vol.126 (13)

2019

Volltextzugriff (PDF)

High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors

Journal of crystal growth, 2019-07, Vol.518, p.14-17

2019

Volltextzugriff (PDF)

Hall effect and magnetoresistance analysis by electron–hole coexisting model in AlInSb/InAsSb quantum wells

Journal of crystal growth, 2009-03, Vol.311 (7), p.1711-1714

2009

Volltextzugriff (PDF)

Spin–orbit interaction and negative magnetoresistance for localized electrons in InSb quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2010-02, Vol.42 (4), p.984-986

2010

Volltextzugriff (PDF)

Quantum transport and spin-orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

Journal of crystal growth, 2009-03, Vol.311 (7), p.2128-2131

2009

Volltextzugriff (PDF)

Carrier density dependence of spin–orbit interaction in InAsSb quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2010-02, Vol.42 (4), p.975-978

2010

Volltextzugriff (PDF)

Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-07, Vol.305, p.117424, Article 117424

2024

Volltextzugriff (PDF)

Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE

Journal of crystal growth, 2015-09, Vol.425, p.76-79

2015

Volltextzugriff (PDF)

Low temperature transport property of the InSb and InAsSb quantum wells with Al sub(0.1)In sub(0.9)Sb barrier layers grown by MBE

Journal of crystal growth, 2015-09, Vol.425, p.76-79

2015

Volltextzugriff (PDF)

Sb irradiation effect on growth of GaAs thin film on Si (111) substrate

Journal of crystal growth, 2013-09, Vol.378, p.113-116

2013

Volltextzugriff (PDF)

Accumulation of Localized Electrons in Sn Doped InSb/AlxIn1−xSb Quantum Wells

Physics procedia, 2010-01, Vol.3 (2), p.1213-1218

2010

Volltextzugriff (PDF)

Quantum transport and spin–orbit interaction in Al 0.1In 0.9Sb/InAs 0.1Sb 0.9 quantum wells

Journal of crystal growth, 2009, Vol.311 (7), p.2128-2131

2009

Volltextzugriff (PDF)

Transport properties of InSb and InAs thin films on GaAs substrates

Journal of crystal growth, 2005-05, Vol.278 (1), p.604-609

2005

Volltextzugriff (PDF)

Properties and applications of Sn-doped single crystal thin film magneto-resistance elements

Proceedings of IEEE Sensors, 2004, 2004, p.1102-1105 vol.3

2004

Volltextzugriff (PDF)

The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE

Journal of crystal growth, 2005-05, Vol.278 (1), p.162-166

2005

Volltextzugriff (PDF)

Electrical properties of InAs thin films grown directly on GaAs(1 0 0) substrates by MBE

Journal of crystal growth, 2005-05, Vol.278 (1), p.614-618

2005

Volltextzugriff (PDF)

Doping Level Dependence of Transport Properties in InAsSb Quantum Wells

Physics procedia, 2010, Vol.3 (2), p.1219-1224

2010

Volltextzugriff (PDF)

Factors that may predict and influence postoperative neurological recovery in posterior fossa surgery: A-320

European journal of anaesthesiology, 2005-05, Vol.22 (Supplement 34), p.86

2005

Volltextzugriff (PDF)

Factors that may predict and influence postoperative neurological recovery in posterior fossa surgery: A-320

European journal of anaesthesiology, 2005-05, Vol.22 Suppl 34, p.86-86

2005

Volltextzugriff (PDF)

Properties of InSb thin films sandwiched by Al0.1In0.9Sb insulating layers grown on GaAs(100) substrates by molecular beam epitaxy

2007 IEEE Sensors, 2007, p.912-914

2007

Volltextzugriff (PDF)

stress-strain model for granular materials considering mechanism of fabric change

Soils and foundations, 1983, Vol.23 (2), p.83-97

1983

Volltextzugriff (PDF)

Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1−xSb/InSb Quantum Wells

Narrow Gap Semiconductors 2007, p.203-207

Volltextzugriff (PDF)

A stress-strain model for granular materials considering mechanism of fabric change. Closure of the discussion

Soils and foundations, 1984, Vol.24 (4), p.147-151

1984

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Realization of high detectivity mid-infrared photodiodes based on highly mismatched AlInSb on GaAs substrates

Fabrication of highly lattice mismatched AlInSb diodes on GaAs substrates for thermophotovoltaic cells

Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates

High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors

Hall effect and magnetoresistance analysis by electron–hole coexisting model in AlInSb/InAsSb quantum wells

Spin–orbit interaction and negative magnetoresistance for localized electrons in InSb quantum wells

Quantum transport and spin-orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

Carrier density dependence of spin–orbit interaction in InAsSb quantum wells

Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE

Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE

Low temperature transport property of the InSb and InAsSb quantum wells with Al sub(0.1)In sub(0.9)Sb barrier layers grown by MBE

Sb irradiation effect on growth of GaAs thin film on Si (111) substrate

Accumulation of Localized Electrons in Sn Doped InSb/AlxIn1−xSb Quantum Wells

Quantum transport and spin–orbit interaction in Al 0.1In 0.9Sb/InAs 0.1Sb 0.9 quantum wells

Transport properties of InSb and InAs thin films on GaAs substrates

Properties and applications of Sn-doped single crystal thin film magneto-resistance elements

The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE

Electrical properties of InAs thin films grown directly on GaAs(1 0 0) substrates by MBE

Doping Level Dependence of Transport Properties in InAsSb Quantum Wells

Factors that may predict and influence postoperative neurological recovery in posterior fossa surgery: A-320

Factors that may predict and influence postoperative neurological recovery in posterior fossa surgery: A-320

Properties of InSb thin films sandwiched by Al0.1In0.9Sb insulating layers grown on GaAs(100) substrates by molecular beam epitaxy

stress-strain model for granular materials considering mechanism of fabric change

Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1−xSb/InSb Quantum Wells

A stress-strain model for granular materials considering mechanism of fabric change. Closure of the discussion

Suchergebnisse filtern