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Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III–V solar cell applications

Journal of crystal growth, 2014-05, Vol.393, p.64-69

2014

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Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch

Journal of crystal growth, 2017-04, Vol.464 (C), p.20-27

2017

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1-eV solar cells with GaInNAs active layer

Journal of crystal growth, 1998-12, Vol.195 (1), p.409-415

1998

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Photocurrent of 1 eV GaInNAs lattice-matched to GaAs

Journal of crystal growth, 1998-01, Vol.195 (1), p.401-408

1998

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Solar-to-hydrogen efficiency: shining light on photoelectrochemical device performance

Energy & environmental science, 2016-01, Vol.9 (1), p.74-8

2016

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Mutual passivation of electrically active and isovalent impurities

Nature materials, 2002-11, Vol.1 (3), p.185-189

2002

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Lattice-mismatched GaAsP Solar Cells Grown on Silicon by OMVPE

2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.772-775

2006

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Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition

Journal of crystal growth, 2003-12, Vol.259 (3), p.223-231

2003

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Lattice-matched GaNPAs-on-silicon tandem solar cells

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005, 2005, p.695-698

2005

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Band Anticrossing in GaInNAs Alloys

Physical review letters, 1999-02, Vol.82 (6), p.1221-1224

1999

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Evaluation of NF3 versus dimethylhydrazine as n sources for GaAsN

Journal of crystal growth, 2002, Vol.234 (2-3), p.323-326

2002

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In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells

Journal of crystal growth, 2008-04, Vol.310 (7), p.2339-2344

2008

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Effect of nitrogen on the band structure of GaInNAs alloys

Journal of applied physics, 1999-08, Vol.86 (4), p.2349-2351

1999

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Photocurrent of 1eV GaInNAs lattice-matched to GaAs

Journal of crystal growth, 1998-12, Vol.195 (1-4), p.401-408

1998

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Effect of Nitrogen-Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys

physica status solidi (b), 1999-11, Vol.216 (1), p.135-139

1999

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Band Anticrossing in III-N-V Alloys

physica status solidi (b), 2001-01, Vol.223 (1), p.75-85

2001

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Modeling of electron diffusion length in GaInAsN solar cells

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.1210-1213

2000

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BGaInAs solar cells lattice-matched to GaAs

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.990-993

2000

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Epitaxial growth of BGaAs and BGaInAs by MOCVD

Journal of crystal growth, 2001-05, Vol.225 (2-4), p.372-376

2001

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Nonlinear dependence of N incorporation on In content in GaInNAs

Journal of crystal growth, 1998-12, Vol.195 (1), p.438-443

1998

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Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

Journal of crystal growth, 2002, Vol.234 (2), p.318-322

2002

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Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005, 2005, p.530-535

2005

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0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.598-602

2006

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2.0-2.1 eV GaxIn1−xP solar cells grown on relaxed GaAsP step grades

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002111-002116

2010

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Characterization of light element impurities in gallium-nitride-phosphide by SIMS analysis

Applied surface science, 2004-06, Vol.231, p.808-812

2004

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Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III–V solar cell applications

Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch

1-eV solar cells with GaInNAs active layer

Photocurrent of 1 eV GaInNAs lattice-matched to GaAs

Solar-to-hydrogen efficiency: shining light on photoelectrochemical device performance

Mutual passivation of electrically active and isovalent impurities

Lattice-mismatched GaAsP Solar Cells Grown on Silicon by OMVPE

Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition

Lattice-matched GaNPAs-on-silicon tandem solar cells

Band Anticrossing in GaInNAs Alloys

Evaluation of NF3 versus dimethylhydrazine as n sources for GaAsN

In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells

Effect of nitrogen on the band structure of GaInNAs alloys

Photocurrent of 1eV GaInNAs lattice-matched to GaAs

Effect of Nitrogen-Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys

Band Anticrossing in III-N-V Alloys

Modeling of electron diffusion length in GaInAsN solar cells

BGaInAs solar cells lattice-matched to GaAs

Epitaxial growth of BGaAs and BGaInAs by MOCVD

Nonlinear dependence of N incorporation on In content in GaInNAs

Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

2.0-2.1 eV GaxIn1−xP solar cells grown on relaxed GaAsP step grades

Characterization of light element impurities in gallium-nitride-phosphide by SIMS analysis

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