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Low-pressure pyrolysis studies of a new phosphorus precursor : Tertiarybutylbis(dimethylamino)phosphine

Journal of electronic materials, 1996-09, Vol.25 (9), p.1434-1438

1996

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Growth of GaSb using trisdimethylaminoantimony

Journal of crystal growth, 1995-05, Vol.151 (1), p.1-8

1995

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Co-pyrolysis of DIPSbH and TMIn

Journal of electronic materials, 1996-09, Vol.25 (9), p.1539-1544

1996

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Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSb

Journal of crystal growth, 1994-10, Vol.143 (1), p.15-21

1994

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Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy

Journal of electronic materials, 1997-11, Vol.26 (11), p.1283-1286

1997

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Triisopropylantimony for organometallic vapor phase epitaxial growth of GaSb and InSb

Applied physics letters, 1991-06, Vol.58 (22), p.2532-2534

1991

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Tellurium doping of InP using triisopropylindium-diisopropyltellurium (TIPInDIPTe)

Journal of crystal growth, 1996-07, Vol.164 (1), p.420-424

1996

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The growth of InSb using triisopropylantimony or tertiarybutyldimethylantimony and trimethylindium

Journal of crystal growth, 1992-11, Vol.124 (1), p.150-157

1992

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InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony

Journal of electronic materials, 1995-11, Vol.24 (11), p.1563-1569

1995

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Chemical beam epitaxy of InP without precracking using tertiarybutylbis(dimethylamino)phosphine

Journal of crystal growth, 1997-02, Vol.172 (1), p.1-4

1997

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Triisopropylindium: decomposition study and use for low temperature growth of InAs

Journal of crystal growth, 1993-01, Vol.126 (2), p.309-316

1993

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A new N-type doping precursor for MOCVD-IMP growth of detector quality MCT

Journal of electronic materials, 1993-08, Vol.22 (8), p.859-864

1993

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Decomposition studies of triisopropylantimony and triallylantimony

Journal of electronic materials, 1991-06, Vol.20 (6), p.457-463

1991

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The use of triisopropylantimony for the growth of InSb and GaSb

Journal of applied physics, 1991-06, Vol.69 (11), p.7605-7611

1991

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MOVPE growth of InSb on GaAs substrates

Journal of crystal growth, 1992-11, Vol.124 (1), p.363-370

1992

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Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

Journal of crystal growth, 1996-07, Vol.164 (1), p.285-290

1996

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Pyrolysis of diisopropylantimony hydride : a new precursor for organometallic vapor phase epitaxy

Journal of electronic materials, 1994-05, Vol.23 (5), p.447-451

1994

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Triisopropylindium for OMVPE growth

Journal of crystal growth, 1992-11, Vol.124 (1), p.88-92

1992

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Room-temperature MOCVD of Sb2Te3 films and solution precipitation of M2Te3 (M=Sb, Bi) powders via a novel (N,N-dimethylamino)trimethylsilane elimination reaction

Chemistry of materials, 1994-06, Vol.6 (6), p.727-729

1994

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Nonalloyed high temperature ohmic contacts on Te-doped InP

Applied physics letters, 1999-03, Vol.74 (13), p.1845-1847

1999

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Diisopropylantimonyhydride (DIPSbH) for low temperature epitaxial growth of InSb

Journal of crystal growth, 1993-09, Vol.132 (3), p.371-376

1993

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Syntheses, characterization, and structural studies of Lewis base adducts of half-open vanadocenes, V(C5H5)(Pdl)(L)

Organometallics, 1993-05, Vol.12 (5), p.1553-1558

1993

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Isolation and characterization of tetramethyltellurium(IV)

Organometallics, 1989-12, Vol.8 (12), p.2817-2820

1989

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Pyrolysis pathways of symmetrical and unsymmetrical organotellurium(II) compounds

Organometallics, 1991-10, Vol.10 (10), p.3589-3596

1991

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Low-temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimony

Applied physics letters, 1991-03, Vol.58 (12), p.1311-1313

1991

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Low-pressure pyrolysis studies of a new phosphorus precursor : Tertiarybutylbis(dimethylamino)phosphine

Growth of GaSb using trisdimethylaminoantimony

Co-pyrolysis of DIPSbH and TMIn

Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSb

Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy

Triisopropylantimony for organometallic vapor phase epitaxial growth of GaSb and InSb

Tellurium doping of InP using triisopropylindium-diisopropyltellurium (TIPInDIPTe)

The growth of InSb using triisopropylantimony or tertiarybutyldimethylantimony and trimethylindium

InSb, GaSb, and GaInSb grown using trisdimethylaminoantimony

Chemical beam epitaxy of InP without precracking using tertiarybutylbis(dimethylamino)phosphine

Triisopropylindium: decomposition study and use for low temperature growth of InAs

A new N-type doping precursor for MOCVD-IMP growth of detector quality MCT

Decomposition studies of triisopropylantimony and triallylantimony

The use of triisopropylantimony for the growth of InSb and GaSb

MOVPE growth of InSb on GaAs substrates

Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

Pyrolysis of diisopropylantimony hydride : a new precursor for organometallic vapor phase epitaxy

Triisopropylindium for OMVPE growth

Room-temperature MOCVD of Sb2Te3 films and solution precipitation of M2Te3 (M=Sb, Bi) powders via a novel (N,N-dimethylamino)trimethylsilane elimination reaction

Nonalloyed high temperature ohmic contacts on Te-doped InP

Diisopropylantimonyhydride (DIPSbH) for low temperature epitaxial growth of InSb

Syntheses, characterization, and structural studies of Lewis base adducts of half-open vanadocenes, V(C5H5)(Pdl)(L)

Isolation and characterization of tetramethyltellurium(IV)

Pyrolysis pathways of symmetrical and unsymmetrical organotellurium(II) compounds

Low-temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimony

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