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The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures

Nanotechnology, 2009-07, Vol.20 (27), p.275703-275703

2009

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H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells

Applied physics letters, 2000-10, Vol.77 (18), p.2870-2872

2000

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An all optical mapping of the strain field in GaAsN/GaAsN:H wires

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Metamorphic buffers and optical measurement of residual strain

Applied physics letters, 2005-12, Vol.87 (26), p.263120-263120-3

2005

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Residual strain measurements in InGaAs metamorphic buffer layers on GaAs

The European physical journal. B, Condensed matter physics, 2007-04, Vol.56 (3), p.217-222

2007

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Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN

Applied physics letters, 2007-02, Vol.90 (9), p.091907-091907-3

2007

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Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1−xAs1−yNy alloy

Applied physics letters, 2003-07, Vol.83 (3), p.470-472

2003

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Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers

Journal of applied physics, 2019-05, Vol.125 (17)

2019

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Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

Applied surface science, 2004-01, Vol.222 (1-4), p.423-431

2004

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Quantum dot strain engineering of InAs∕InGaAs nanostructures

Journal of applied physics, 2007-01, Vol.101 (2)

2007

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H irradiation effects on the GaAs-like Raman modes in GaAs1- x N x /GaAs1- x N x :H planar heterostructures

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Photoreflectance study of growth mode in InAs–GaAs quasimonolayer single quantum wells

Journal of applied physics, 1998-09, Vol.84 (6), p.3374-3377

1998

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Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures

The European physical journal. B, Condensed matter physics, 2002-11, Vol.30 (1), p.39-43

2002

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Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures

Journal of applied physics, 2011-06, Vol.109 (12), p.123511-123511-8

2011

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Studies of photoreflectance spectra in Cd1−xMnxTe/CdTe superlattices with high compositions

Journal of applied physics, 2002-11, Vol.92 (9), p.5169-5172

2002

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H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells

Applied physics letters, 1998-08, Vol.73 (9), p.1254-1256

1998

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Interband optical properties of molecular-beam epitaxially grown GaAs1−xSbx on GaAs substrates

Journal of applied physics, 1999-10, Vol.86 (8), p.4706-4708

1999

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Raman scattering in InAs/AlGaAs quantum dot nanostructures

Applied physics letters, 2011-03, Vol.98 (11), p.111903-111903-3

2011

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Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

The European physical journal. B, Condensed matter physics, 2000-07, Vol.16 (1), p.19-24

2000

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Brewster angle technique to study metal nanoparticle distributions in dielectric matrices

Journal of applied physics, 1996-01, Vol.79 (2), p.1032-1039

1996

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Interplay of nitrogen and hydrogen in InxGa1−xAs1−yNy/GaAs heterostructures

Physica. B, Condensed matter, 2001-12, Vol.308-310, p.850-853

2001

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Thermoreflectance study of the direct energy gap of GaSb

Solid state communications, 1997-10, Vol.104 (2), p.81-84

1997

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Quantum dot strain engineering of In As ∕ In Ga As nanostructures

Journal of applied physics, 2007-01, Vol.101 (2), p.024313-024313-8

2007

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The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures

H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures

Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells

An all optical mapping of the strain field in GaAsN/GaAsN:H wires

Metamorphic buffers and optical measurement of residual strain

Residual strain measurements in InGaAs metamorphic buffer layers on GaAs

Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN

Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1−xAs1−yNy alloy

Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers

Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

Quantum dot strain engineering of InAs∕InGaAs nanostructures

H irradiation effects on the GaAs-like Raman modes in GaAs1- x N x /GaAs1- x N x :H planar heterostructures

Photoreflectance study of growth mode in InAs–GaAs quasimonolayer single quantum wells

Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures

Studies of photoreflectance spectra in Cd1−xMnxTe/CdTe superlattices with high compositions

H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells

Interband optical properties of molecular-beam epitaxially grown GaAs1−xSbx on GaAs substrates

Raman scattering in InAs/AlGaAs quantum dot nanostructures

Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

Brewster angle technique to study metal nanoparticle distributions in dielectric matrices

Interplay of nitrogen and hydrogen in InxGa1−xAs1−yNy/GaAs heterostructures

Thermoreflectance study of the direct energy gap of GaSb

Quantum dot strain engineering of In As ∕ In Ga As nanostructures

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